公开(公告)号：US07726198B2

公开(公告)日：2010-06-01

申请号：US11852608

申请日：2007-09-10

申请人： John D. Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John D. Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： G01L1/00

CPC分类号： G01B7/22 ,  G01L1/148

摘要： A strain sensor comprises a capacitor formed on a substrate, the capacitor having a layered structure in which a lower electrode, a metal oxide film of perovskite structure and an upper electrode are laminated consecutively on the substrate, the capacitor being adapted to be mounted upon a specimen, and a measuring circuit that measures a leakage current flowing through the capacitor between the upper electrode and the lower electrode.

摘要翻译： 应变传感器包括形成在基板上的电容器，所述电容器具有层状结构，其中下电极，钙钛矿结构的金属氧化物膜和上电极在基板上连续层压，电容器适于安装在基板上 试样和测量在上电极和下电极之间流过电容器的漏电流的测量电路。

公开(公告)号：US20080099888A1

公开(公告)日：2008-05-01

申请号：US11984361

申请日：2007-11-16

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki

IPC分类号： H01L23/50 ,  H05K1/16

CPC分类号： H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/6835 ,  H01L21/76831 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05091 ,  H01L2224/05096 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/14051 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

摘要翻译： 公开了一种包括插入器和半导体芯片的半导体器件。 插入器包括Si衬底; 通过穿过Si衬底的相应通孔中的绝缘材料提供的多个通孔; 设置在所述Si衬底的第一主表面上以便与所述通孔电连接的薄膜电容器; 以及设置在Si衬底的第二主表面上的多个外部连接端子，以便电连接到通孔。 第二主表面远离第一主表面。 半导体芯片设置在第一主表面和第二主表面中的一个上，以便与通孔电连接。 Si衬底的厚度小于通孔的直径。

公开(公告)号：US20070141800A1

公开(公告)日：2007-06-21

申请号：US11393910

申请日：2006-03-31

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

IPC分类号： H01L21/20

CPC分类号： H01L23/5223 ,  H01G4/33 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L28/55 ,  H01L28/65 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/162 ,  H05K1/185 ,  H05K2201/0179 ,  H05K2201/09481 ,  H05K2201/10712 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.

摘要翻译： 薄膜电容器包括形成在基底基板10上并包括第一电容器电极14，形成在第一电容器电极14上的电容器电介质膜16的电容器部分20和形成在电容器电介质膜16上的第二电容器电极18 ; 引出电极26a，26b从第一电容器电极14或第二电容器电极18引出，并由阻止氢或水扩散的导电阻挡膜形成; 以及用于连接到外部并连接到引出电极26a，26b的外部连接电极34a，34b。

公开(公告)号：US20070090546A1

公开(公告)日：2007-04-26

申请号：US11338857

申请日：2006-01-25

申请人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L23/29

CPC分类号： H01L23/50 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/49822 ,  H01L23/642 ,  H01L23/645 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3011 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0023 ,  H05K3/0044 ,  H05K3/20 ,  H05K3/4614 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0317 ,  H05K2201/09481 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09763 ,  H05K2201/10674 ,  H05K2203/016 ,  H05K2203/0733 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/05599

摘要： The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.

摘要翻译： 插入件包括由多个树脂层68,20,32,48形成的基座8; 掩埋在所述多个树脂层的第一树脂层68和所述多个树脂层的第二树脂层20之间的薄膜电容器18a，18b，其包括第一电容器电极12a，12b，第二电容器电极16 与第一电容器电极12a，12b和第二电容器电极16相对，以及形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200或更大的电容器电介质膜14 ; 通过基座8形成并电连接到第一电容器电极12a，12b的第一贯通电极77a; 以及通过基底8形成并电连接到第二电容器电极16的第二贯通电极77b。

公开(公告)号：US20060214205A1

公开(公告)日：2006-09-28

申请号：US11349121

申请日：2006-02-08

申请人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L29/94

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G7/06 ,  H01L27/016 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor 10 having a lower electrode 2, a ferroelectric layer 3, and an upper electrode 4 on a substrate 1, the thin-film capacitor 10 has the upper electrode 4 that adds a compressive stress to the ferroelectric layer 3, and a residual compressive stress in the upper electrode 4 is within a range from 108 to 6×1011 dyne/cm2.

摘要翻译： 为了提供一种薄膜电容器和半导体器件，其能够防止由于在使用铁电体物质的薄膜电容器中的铁电层中的残余拉伸应力而导致的介电常数降低，并且增加介电常数并增加电 容量。 在基板1上具有下电极2，铁电体层3和上电极4的薄膜电容器10中，薄膜电容器10具有向铁电层3增加压应力的上电极4， 并且上部电极4中的残余压缩应力在10×8×6×10 6达因/ cm 2以下的范围内。

公开(公告)号：US20060084251A1

公开(公告)日：2006-04-20

申请号：US11066481

申请日：2005-02-28

申请人： Kanae Nakagawa ,  Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara ,  John Baniecki

发明人： Kanae Nakagawa ,  Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara ,  John Baniecki

IPC分类号： H01L21/20

CPC分类号： H01L21/76801 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 so that the ten-point height of irregularities of the surface of the resin layer 10 is 0.5-5 μm; the step of forming a seed layer 36 on the resin layer 10; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 切割树脂层10的表面部分，使得树脂层10的表面的十点高度为0.5-5μm的步骤; 在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面上也不会形成过度的深孔，如通过溶剂处理，可以在树脂层10上形成微粉化图案的光致抗蚀剂膜40。 因此，可以以较窄的间距在树脂层10上形成互连44等，从而确保高可靠性。

公开(公告)号：US20060051917A1

公开(公告)日：2006-03-09

申请号：US11014810

申请日：2004-12-20

申请人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/8242

CPC分类号： H01L27/016 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/84 ,  H01L27/10852 ,  H01L27/11507 ,  H01L27/13 ,  H05K1/0231

摘要： A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0

摘要翻译： 一种电容元件，包括：硅基板（基材）1; 形成在硅基板1上的基极绝缘膜2; 以及通过在基底绝缘膜2上形成底部电极4a，电容电介质膜5a和顶部电极6a构成的电容器Q.电容元件的特征在于，电容器电介质膜5a由材料 具有式（Ba 1-y，Sr，y）m Y Y 1 Q Q 其中0

公开(公告)号：US20050156279A1

公开(公告)日：2005-07-21

申请号：US11059469

申请日：2005-02-16

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L29/00 ,  H01L21/338

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域内的第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US09455212B2

公开(公告)日：2016-09-27

申请号：US13473922

申请日：2012-05-17

申请人： Hiroki Uchida ,  Takeshi Shioga ,  Shigenori Aoki ,  Susumu Ogata ,  Hideaki Nagaoka

发明人： Hiroki Uchida ,  Takeshi Shioga ,  Shigenori Aoki ,  Susumu Ogata ,  Hideaki Nagaoka

IPC分类号： F28F27/00 ,  H01L23/427 ,  F28D15/04 ,  F28D15/06 ,  H01L23/34 ,  F28D15/02

CPC分类号： H01L23/427 ,  F28D15/0266 ,  F28D15/043 ,  F28D15/06 ,  H01L23/345 ,  H01L2924/0002 ,  H01L2924/00

摘要： A loop heat pipe system includes a loop heat pipe (LHP), a temperature sensor, a heater and a controller. The temperature sensor measures temperature of a working fluid portion of the LHP in which the working fluid has different phases depending on whether or not the LHP is in a disable status not to start up a heat transportation, in which a liquid phase of the working fluid does not exist in an evaporator of the LHP. The heater heats a heating target part of a vapor line. The controller, in order to start up the LHP, turns on the heater, monitors temperature of the heating target part using the temperature sensor, and turns off the heater when detecting a change in the monitored temperature, caused by condensation of a vapor phase of the working fluid.

摘要翻译： 回路热管系统包括回路热管（LHP），温度传感器，加热器和控制器。 温度传感器根据LHP是否处于禁止状态而测量工作流体具有不同相位的LHP的工作流体部分的温度，而不启动热运输，其中工作流体的液相 在LHP的蒸发器中不存在。 加热器加热蒸气管线的加热目标部分。 控制器为了启动LHP，打开加热器，使用温度传感器监测加热对象部件的温度，并且当检测到监测到的温度变化时，关闭加热器，该温度由蒸气相的冷凝引起 工作流体。

公开(公告)号：US20130044432A1

公开(公告)日：2013-02-21

申请号：US13567257

申请日：2012-08-06

申请人： Susumu Ogata ,  Hiroki Uchida ,  Seiji Hibino ,  Takeshi Shioga ,  Takahiro Kimura

发明人： Susumu Ogata ,  Hiroki Uchida ,  Seiji Hibino ,  Takeshi Shioga ,  Takahiro Kimura

IPC分类号： F28D15/04 ,  H05K7/20

CPC分类号： F28D15/043 ,  F28D15/046 ,  H05K7/20336

摘要： There is provided a loop heat pipe which includes an evaporator that internally includes at least one wick built, a condenser, a liquid pipe and a vapor pipe that connect the evaporator and the condenser to each other, and a heat dispersion cavity that is formed inside the evaporator, and disperses a vapor, wherein the wick includes, a first wick that is porous, a second wick that is porous, the second wick being inserted into the first wick from the liquid pipe side and including a pore size larger than the first wick, and a vapor channel that is defined between the first wick and the second wick. The vapor channel is connected at an end on the liquid pipe side to the heat dispersion cavity.

摘要翻译： 提供了一种环路热管，其包括内部包括至少一个灯芯的冷凝器，冷凝器，液体管和将蒸发器和冷凝器彼此连接的蒸气管的蒸发器，以及形成在内部的散热腔 蒸发器，并且分散蒸气，其中所述芯包括多孔的第一芯，第二芯是多孔的，所述第二芯从所述液管侧插入所述第一芯中，并且包括大于所述第一芯的孔径 灯芯和在第一灯芯和第二灯芯之间限定的蒸气通道。 蒸气通道在液体管侧的一端连接到散热腔。