公开(公告)号：US20070141800A1

公开(公告)日：2007-06-21

申请号：US11393910

申请日：2006-03-31

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John Baniecki ,  Masatoshi Ishii

IPC分类号： H01L21/20

CPC分类号： H01L23/5223 ,  H01G4/33 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L28/55 ,  H01L28/65 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/1147 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/162 ,  H05K1/185 ,  H05K2201/0179 ,  H05K2201/09481 ,  H05K2201/10712 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.

摘要翻译： 薄膜电容器包括形成在基底基板10上并包括第一电容器电极14，形成在第一电容器电极14上的电容器电介质膜16的电容器部分20和形成在电容器电介质膜16上的第二电容器电极18 ; 引出电极26a，26b从第一电容器电极14或第二电容器电极18引出，并由阻止氢或水扩散的导电阻挡膜形成; 以及用于连接到外部并连接到引出电极26a，26b的外部连接电极34a，34b。

公开(公告)号：US20070090546A1

公开(公告)日：2007-04-26

申请号：US11338857

申请日：2006-01-25

申请人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi ,  John Baniecki ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Yoshikatsu Ishizuki ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi ,  John Baniecki ,  Kazuaki Kurihara

IPC分类号： H01L23/29

CPC分类号： H01L23/50 ,  H01L21/4846 ,  H01L21/4857 ,  H01L21/6835 ,  H01L23/49822 ,  H01L23/642 ,  H01L23/645 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3011 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0023 ,  H05K3/0044 ,  H05K3/20 ,  H05K3/4614 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0317 ,  H05K2201/09481 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09763 ,  H05K2201/10674 ,  H05K2203/016 ,  H05K2203/0733 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/05599

摘要： The interposer comprises a base 8 formed of a plurality of resin layers 68, 20, 32, 48; thin-film capacitors 18a, 18b buried between a first resin layer 68 of said plurality of resin layers and a second resin layer 20 of said plurality of resin layers, which include first capacitor electrodes 12a, 12b, second capacitor electrodes 16 opposed to the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and a capacitor dielectric film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16; a first through-electrode 77a formed through the base 8 and electrically connected to the first capacitor electrode 12a, 12b; and a second through-electrode 77b formed through the base 8 and electrically connected to the second capacitor electrode 16.

摘要翻译： 插入件包括由多个树脂层68,20,32,48形成的基座8; 掩埋在所述多个树脂层的第一树脂层68和所述多个树脂层的第二树脂层20之间的薄膜电容器18a，18b，其包括第一电容器电极12a，12b，第二电容器电极16 与第一电容器电极12a，12b和第二电容器电极16相对，以及形成在第一电容器电极12a，12b和第二电容器电极16之间的相对介电常数为200或更大的电容器电介质膜14 ; 通过基座8形成并电连接到第一电容器电极12a，12b的第一贯通电极77a; 以及通过基底8形成并电连接到第二电容器电极16的第二贯通电极77b。

公开(公告)号：US07180119B2

公开(公告)日：2007-02-20

申请号：US10849791

申请日：2004-05-21

申请人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John David Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L27/108

CPC分类号： H01G4/33 ,  H01G4/008 ,  H01G4/228 ,  H01L21/28568 ,  H01L27/0805 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L2224/11

摘要： The capacitor according to the present invention comprises a lower electrode 18 formed on a base substrate 14, a dielectric film 20 formed on the lower electrode 18, and an upper electrode 28 formed on the dielectric film 20 and including a polycrystalline conduction film 22, and a amorphous conduction film 24 formed on the polycrystalline conduction film 22. Because of the amorphous conduction film 24 included in the upper electrode 28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film 20. Accordingly, the dielectric film 20 of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.

摘要翻译： 根据本发明的电容器包括形成在基底基板14上的下电极18，形成在下电极18上的电介质膜20和形成在电介质膜20上并包括多晶导体膜22的上电极28，以及 形成在多晶导体膜22上的非晶导体膜24。 由于上部电极28中包含的能够截断氢和水的非晶导体膜24，所以可以禁止氢和水到达电介质膜20。 因此，防止氧化物的电介质膜20被氢还原，并且电容器可以具有良好的电特性。

公开(公告)号：US20060214205A1

公开(公告)日：2006-09-28

申请号：US11349121

申请日：2006-02-08

申请人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L29/94

CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G7/06 ,  H01L27/016 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor 10 having a lower electrode 2, a ferroelectric layer 3, and an upper electrode 4 on a substrate 1, the thin-film capacitor 10 has the upper electrode 4 that adds a compressive stress to the ferroelectric layer 3, and a residual compressive stress in the upper electrode 4 is within a range from 108 to 6×1011 dyne/cm2.

摘要翻译： 为了提供一种薄膜电容器和半导体器件，其能够防止由于在使用铁电体物质的薄膜电容器中的铁电层中的残余拉伸应力而导致的介电常数降低，并且增加介电常数并增加电 容量。 在基板1上具有下电极2，铁电体层3和上电极4的薄膜电容器10中，薄膜电容器10具有向铁电层3增加压应力的上电极4， 并且上部电极4中的残余压缩应力在10×8×6×10 6达因/ cm 2以下的范围内。

公开(公告)号：US07102367B2

公开(公告)日：2006-09-05

申请号：US10621445

申请日：2003-07-18

申请人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

发明人： Yasuo Yamagishi ,  Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara

IPC分类号： G01R31/02 ,  H01R13/00 ,  G01R31/26 ,  H01L29/08

CPC分类号： G01R1/07378 ,  G01R31/2886 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599

摘要： A probe card includes probes, a build-up interconnection layer having a multilayer interconnection structure therein and carrying the probes on a top surface in electrical connection with the multilayer interconnection structure, and a capacitor provided on the build-up interconnection layer in electrical connection with one of the probes via the multilayer interconnection structure, wherein the multilayer interconnection structure includes an inner via-contact in the vicinity of the probe and the capacitor is embedded in a resin insulation layer constituting the build-up layer.

摘要翻译： 探针卡包括探针，在其中具有多层互连结构的堆积互连层，并且在与多层互连结构电连接的顶表面上承载探针，以及设置在积层互连层上的电容器，其与 通过多层互连结构的探针中的一个，其中多层互连结构包括在探针附近的内部通孔接触，并且电容器嵌入构成堆积层的树脂绝缘层中。

公开(公告)号：US20060084251A1

公开(公告)日：2006-04-20

申请号：US11066481

申请日：2005-02-28

申请人： Kanae Nakagawa ,  Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara ,  John Baniecki

发明人： Kanae Nakagawa ,  Takeshi Shioga ,  Masataka Mizukoshi ,  Kazuaki Kurihara ,  John Baniecki

IPC分类号： H01L21/20

CPC分类号： H01L21/76801 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76885 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/381 ,  H05K3/4602 ,  H05K3/4661 ,  H05K2201/0209 ,  H05K2201/086 ,  H05K2201/09509 ,  H05K2203/0195 ,  H05K2203/0228

摘要： The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 so that the ten-point height of irregularities of the surface of the resin layer 10 is 0.5-5 μm; the step of forming a seed layer 36 on the resin layer 10; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

摘要翻译： 电镀方法包括在基板16上形成树脂层10的步骤; 切割树脂层10的表面部分，使得树脂层10的表面的十点高度为0.5-5μm的步骤; 在树脂层10上形成种子层36的步骤; 以及通过电镀在种子层36上形成电镀膜44的步骤。 可以赋予树脂层10的表面适当的粗糙度，由此能够充分确保种子层36与树脂层10之间的粘附性。 在树脂层10的表面上也不会形成过度的深孔，如通过溶剂处理，可以在树脂层10上形成微粉化图案的光致抗蚀剂膜40。 因此，可以以较窄的间距在树脂层10上形成互连44等，从而确保高可靠性。

公开(公告)号：US20060051917A1

公开(公告)日：2006-03-09

申请号：US11014810

申请日：2004-12-20

申请人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/8242

CPC分类号： H01L27/016 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/84 ,  H01L27/10852 ,  H01L27/11507 ,  H01L27/13 ,  H05K1/0231

摘要： A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0

摘要翻译： 一种电容元件，包括：硅基板（基材）1; 形成在硅基板1上的基极绝缘膜2; 以及通过在基底绝缘膜2上形成底部电极4a，电容电介质膜5a和顶部电极6a构成的电容器Q.电容元件的特征在于，电容器电介质膜5a由材料 具有式（Ba 1-y，Sr，y）m Y Y 1 Q Q 其中0

公开(公告)号：US06894396B2

公开(公告)日：2005-05-17

申请号：US10619483

申请日：2003-07-16

申请人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

发明人： Takeshi Shioga ,  John David Baniecki ,  Kazuaki Kurihara ,  Yasuo Yamagishi

IPC分类号： H01L23/12 ,  H01L21/60 ,  H01L23/31 ,  H01L23/50 ,  H01L23/64 ,  H01L25/00 ,  H01L27/01 ,  H05K1/02 ,  H05K1/18 ,  H01L23/48

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/642 ,  H01L24/48 ,  H01L24/81 ,  H01L27/016 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19106 ,  H01L2924/30107 ,  H05K1/0231 ,  H05K1/182 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device comprises a carrier substrate, an integrated circuit chip mounted on the carrier substrate via bumps, and a capacitor provided to stabilize operation of the integrated circuit chip at high frequencies. In the semiconductor device, the capacitor is electrically connected to pads on bottom of the integrated circuit chip, and the capacitor is provided to have a height on the carrier substrate that is smaller than or equal to a height of the bumps on the carrier substrate.

摘要翻译： 半导体器件包括载体衬底，通过凸块安装在载体衬底上的集成电路芯片，以及用于稳定集成电路芯片在高频下的操作的电容器。 在半导体器件中，电容器电连接到集成电路芯片的底部的焊盘，并且电容器被设置为具有小于或等于载体衬底上的凸块的高度的载体衬底上的高度。

公开(公告)号：US09714662B2

公开(公告)日：2017-07-25

申请号：US13578838

申请日：2011-02-17

申请人： Kazuaki Kurihara

发明人： Kazuaki Kurihara

IPC分类号： F04D25/02 ,  F04D17/12 ,  F04D25/06 ,  F04D29/62 ,  F04D25/16

CPC分类号： F04D25/02 ,  F04D17/122 ,  F04D25/06 ,  F04D25/0606 ,  F04D25/163 ,  F04D29/624

摘要： Provided is a turbocompressor (4) having a drive part (12) generating rotational power, an impeller (22a) to which the rotational power of the drive part (12) is transmitted to rotate, a plurality of gears (31, 32) transmitting the rotational power of the drive part (12) to the impeller (22a), and a drive part casing (13) in which the drive part (12) is installed. This turbocompressor (4) includes an impeller casing (22e) installed around the impeller (22a), and a gear casing (33) configured to be formed independently of the impeller casing (22e) and the drive part casing (13), to couple the impeller casing (22e) and the drive part casing (13), and to form an accommodation space (33a) in which the plurality of gears (31, 32) are accommodated. With this configuration, in manufacturing the turbocompressor, a working process can be simplified and working labor and cost can be reduced.

公开(公告)号：US08858172B2

公开(公告)日：2014-10-14

申请号：US13072917

申请日：2011-03-28

申请人： Kazuaki Kurihara ,  Kentarou Oda ,  Noriyasu Sugitani ,  Minoru Tsukamoto ,  Nobusada Takahara

发明人： Kazuaki Kurihara ,  Kentarou Oda ,  Noriyasu Sugitani ,  Minoru Tsukamoto ,  Nobusada Takahara

IPC分类号： F04D29/04 ,  F04D29/053 ,  F04D25/04 ,  F04D29/62

CPC分类号： F04D29/053 ,  F04D25/04 ,  F04D29/624 ,  Y10T29/49316

摘要： A method of manufacturing a rotor assembly in which a first impeller and a second impeller are fixed to a rotation shaft which is supported by a bearing so as to be rotatable, the method including: fixing the second impeller to the rotation shaft; fitting and fixing a sleeve to the rotation shaft after fixing the second impeller; fitting and fixing the bearing to the sleeve after fitting and fixing the sleeve; and fixing the first impeller after fitting and fixing the bearing.

摘要翻译： 一种制造转子组件的方法，其中第一叶轮和第二叶轮固定到由轴承支撑以便可旋转的旋转轴，该方法包括：将第二叶轮固定到旋转轴; 在固定第二叶轮之后将套筒装配并固定到旋转轴; 在安装和固定套筒之后，将轴承装配并固定到套筒上; 并在安装和固定轴承之后固定第一叶轮。