Metallizing transparent conductive paths
    82.
    发明授权
    Metallizing transparent conductive paths 失效
    金属化透明导电路径

    公开(公告)号:US4726965A

    公开(公告)日:1988-02-23

    申请号:US919158

    申请日:1986-10-15

    申请人: Rolf Zondler

    发明人: Rolf Zondler

    摘要: To metallize transparent conductive paths of indium tin oxide (ITO) on substrates of display devices, a solderable metal layer is applied by electroless deposition. If the metal layer is adjacent a liquid crystal display device, the display device may be manufactured and tested prior to the electroless deposition, with only an edge of the substrate being dipped into the deposition bath. Prior to the deposition of the solderable metal layer, the indium tin oxide surface may be reduced and an adhesion improving layer of may also be deposited by above the indium tin surface and below the solderable metal layer. Integrated circuits can then be soldered to the metallized conductive paths.

    摘要翻译: 为了在显示装置的基板上金属化氧化铟锡(ITO)的透明导电路径,通过无电沉积施加可焊接的金属层。 如果金属层与液晶显示装置相邻,则可以在无电沉积之前制造和测试显示装置,只有基板的边缘被浸入沉积浴中。 在可焊接金属层的沉积之前,可以减少铟锡氧化物表面,并且还可以在铟锡表面上方并且在可焊接金属层之下沉积粘附改善层。 然后可以将集成电路焊接到金属化导电路径。

    PRIMER FOR ELECTROLESS PLATING
    89.
    发明申请
    PRIMER FOR ELECTROLESS PLATING 审中-公开
    电镀镀层

    公开(公告)号:US20160010215A1

    公开(公告)日:2016-01-14

    申请号:US14428189

    申请日:2013-09-12

    IPC分类号: C23C18/31 C23C18/16

    摘要: It is an object of the present invention to provide a novel primer for use in pretreatment steps in electroless plating which is environmentally friendly, by which process is easy with fewer steps, and which can realize cost reduction. A primer for forming a metal plating film on a base material by electroless plating, the primer including: a hyperbranched polymer having an ammonium group at a molecular terminal and a weight-average molecular weight of 500 to 5,000,000; a metal fine particle; and an alkoxysilane.

    摘要翻译: 本发明的目的是提供一种用于化学镀中的预处理步骤的新型底漆,其是环保的,通过该步骤,步骤更简单,并且可以实现成本降低。 一种用于通过化学镀在基材上形成金属电镀膜的底漆,所述底漆包括:在分子末端具有铵基并且重均分子量为500至5,000,000的超支化聚合物; 金属微粒; 和烷氧基硅烷。