摘要:
An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.
摘要:
An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer.
摘要:
A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.
摘要:
A microelectronic interconnect element can include a plurality of first metal lines and a plurality of second metal lines interleaved with the first metal lines. Each of the first and second metal lines has a surface extending within the same reference plane. The first metal lines have surfaces above the reference plane and remote therefrom and the second metal lines have surfaces below the reference plane and remote therefrom. A dielectric layer can separate a metal line of the first metal lines from an adjacent metal line of the second metal lines.
摘要:
A method is provided for manufacturing a multilayer substrate. An insulating layer can have a hole overlying a patterned second metal layer. In turn, the second metal layer can overlie a first metal layer. A third metal layer can be electroplated onto the patterned second metal layer within the hole, the third metal layer extending from the second metal layer onto a wall of the hole. When plating the third metal layer, the first and second metal layers can function as a conductive commoning element.
摘要:
A connecting member between wiring films is provided in which: a normal copper foil, which is a general-purpose component and not expensive, or the like can be used as a material; formation of bumps is sufficiently achieved by conducting etching one time; and a necessary number of layers can be laminated and pressed collectively at a time. Bumps, which are formed approximately in a cone-shape, for connecting wiring films of a multilayer wiring substrate are embedded in a second resin film that serves as an interlayer insulating film.
摘要:
A method of fabricating an interconnect element may include fabricating a metal layer that overlies a carrier layer and that includes a plurality of metal traces; providing a dielectric element to overlie the metal layer and the carrier layer; providing a plurality of metal posts; and removing the carrier layer to expose the first major surface of the dielectric element and the outer surfaces of the plurality of metal traces.
摘要:
An interconnection element is provided for conductive interconnection with another element having at least one of microelectronic devices or wiring thereon. The interconnection element includes a dielectric element having a major surface. A plated metal layer including a plurality of exposed metal posts can project outwardly beyond the major surface of the dielectric element. Some of the metal posts can be electrically insulated from each other by the dielectric element. The interconnection element typically includes a plurality of terminals in conductive communication with the metal posts. The terminals can be connected through the dielectric element to the metal posts. The posts may be defined by plating a metal onto exposed co-planar surfaces of a mandrel and interior surfaces of openings in a mandrel, after which the mandrel can be removed.
摘要:
A multiple wiring layer interconnection element includes capacitors or other electrical components embedded between a first exposed wiring layer and a second exposed wiring layer of the interconnection element. Internal wiring layers and are provided between exposed surfaces of the respective capacitors, the internal wiring layers being electrically insulated from the capacitors by dielectric layers. The internal wiring layers are isolated from each other by an internal dielectric layer. Conductive vias provide conductive interconnection between the two internal wiring layers. A method of fabricating a multiple wiring layer interconnection element is also provided.
摘要:
To increase the dimensional accuracy of an interlayer member used for producing a multilayer wiring board which is inserted between two wiring layers to establish interlayer insulation and interlayer electrical connection between the wiring layers, to thereby increase a layout density. A mask film is formed on a main surface of a sheet-like carrier layer. A metal column for interlayer connection is formed on the main surface of the carrier layer by plating a copper using the mask film as a mask. The mask film is removed. An interlayer insulating layer and a protective sheet are laminated on the main surface of the carrier layer in such a manner that the metal column for interlayer connection penetrates them. The interlayer insulating layer and the protective sheet are polished until the upper surface of the metal column for interlayer connection is exposed. Then, the carrier layer is removed. Furthermore, the protective sheet is removed.