-
公开(公告)号：US08227924B2
公开(公告)日：2012-07-24
申请号：US12835458
申请日：2010-07-13
IPC分类号： H01L23/48
CPC分类号： H01L23/3171 , H01L23/3192 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05166 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/11444 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/13012 , H01L2224/13014 , H01L2224/13015 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/14179 , H01L2224/14515 , H01L2224/14517 , H01L2224/16145 , H01L2224/16225 , H01L2224/17051 , H01L2224/17517 , H01L2224/29011 , H01L2224/29013 , H01L2224/29101 , H01L2224/29111 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/83193 , H01L2225/06513 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/01007 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.
摘要翻译： 提供了与半导体器件一起使用的衬底对位。 活动柱和虚拟柱形成在第一基板上，使得虚拟柱可具有高于活动柱的高度的高度。 当将第一衬底连接到第二衬底时，虚拟柱作为支座，从而产生更大的均匀性。 在一个实施例中，虚拟柱可以通过形成具有用于虚拟柱的较小宽度的开口的图案化掩模而不是活性柱而同时形成为活性柱。 当使用电镀方法形成虚拟和活动柱时，图案化掩模中的虚拟柱形开口的较小宽度使虚拟柱具有比活动柱更大的高度。
-
公开(公告)号：US20120012985A1
公开(公告)日：2012-01-19
申请号：US12835458
申请日：2010-07-13
CPC分类号： H01L23/3171 , H01L23/3192 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/03912 , H01L2224/0401 , H01L2224/05073 , H01L2224/05166 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/11444 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1147 , H01L2224/13012 , H01L2224/13014 , H01L2224/13015 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/14179 , H01L2224/14515 , H01L2224/14517 , H01L2224/16145 , H01L2224/16225 , H01L2224/17051 , H01L2224/17517 , H01L2224/29011 , H01L2224/29013 , H01L2224/29101 , H01L2224/29111 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/83193 , H01L2225/06513 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/01007 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.
摘要翻译： 提供了与半导体器件一起使用的衬底对位。 活动柱和虚拟柱形成在第一基板上，使得虚拟柱可具有高于活动柱的高度的高度。 当将第一衬底连接到第二衬底时，虚拟柱作为支座，从而产生更大的均匀性。 在一个实施例中，虚拟柱可以通过形成具有用于虚拟柱的较小宽度的开口的图案化掩模而不是活性柱而同时形成为活性柱。 当使用电镀方法形成虚拟和活动柱时，图案化掩模中的虚拟柱形开口的较小宽度使虚拟柱具有比活动柱更大的高度。
-
公开(公告)号：US20130270699A1
公开(公告)日：2013-10-17
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L23/498
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
-
公开(公告)号：US09425136B2
公开(公告)日：2016-08-23
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L29/49 , H01L23/498 , H01L23/00
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
-
公开(公告)号：US09905524B2
公开(公告)日：2018-02-27
申请号：US13193969
申请日：2011-07-29
CPC分类号： H01L24/11 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05541 , H01L2224/05552 , H01L2224/05562 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13005 , H01L2224/13022 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/16237 , H01L2924/00014 , H01L2924/01012 , H01L2924/01029 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/206 , H01L2924/381 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01013 , H01L2924/0104 , H01L2924/01082 , H01L2924/01046 , H01L2924/01083 , H01L2924/01051 , H01L2924/00
摘要： A bump structure in a semiconductor device or a packing assembly includes an under-bump metallization (UBM) layer formed on a conductive pad of a semiconductor substrate. The UBM layer has a width greater than a width of the conductive pad.
-
公开(公告)号：US20130134563A1
公开(公告)日：2013-05-30
申请号：US13308249
申请日：2011-11-30
CPC分类号： H01L24/11 , H01L23/293 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05086 , H01L2224/05091 , H01L2224/05124 , H01L2224/05541 , H01L2224/05572 , H01L2224/1145 , H01L2224/11462 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2924/00014 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
摘要翻译： 结构包括形成在接合焊盘下方的顶部金属连接器。 接合焊盘由第一钝化层和第二钝化层包围。 聚合物层进一步形成在第二钝化层上。 第一钝化层中的开口的尺寸小于顶部金属连接器的尺寸。 顶部金属连接器的尺寸小于第二钝化层中的开口的尺寸和聚合物层中的开口的尺寸。
-
公开(公告)号：US20130093079A1
公开(公告)日：2013-04-18
申请号：US13276090
申请日：2011-10-18
IPC分类号： H01L23/498
CPC分类号： H01L24/16 , H01L23/3114 , H01L23/3192 , H01L23/49811 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05124 , H01L2224/05166 , H01L2224/05572 , H01L2224/05647 , H01L2224/061 , H01L2224/06132 , H01L2224/13014 , H01L2224/13022 , H01L2224/13027 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13541 , H01L2224/1405 , H01L2224/141 , H01L2224/16105 , H01L2224/16237 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/00012 , H01L2924/01047 , H01L2924/206 , H01L2224/05552
摘要： A die includes a substrate, a metal pad over the substrate, and a passivation layer covering edge portions of the metal pad. A metal pillar is formed over the metal pad. A portion of the metal pillar overlaps a portion of the metal pad. A center of the metal pillar is misaligned with a center of the metal pad.
-
8.发明申请公开(公告)号：US20110285013A1
公开(公告)日：2011-11-24
申请号：US12784335
申请日：2010-05-20
申请人： Yao-Chun Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Chen-Cheng Kuo , Chen-Shien Chen
IPC分类号： H01L23/488
CPC分类号： H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/03462 , H01L2224/03464 , H01L2224/03912 , H01L2224/0401 , H01L2224/05571 , H01L2224/05572 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/1146 , H01L2224/11464 , H01L2224/1148 , H01L2224/11849 , H01L2224/13005 , H01L2224/13022 , H01L2224/13147 , H01L2224/13562 , H01L2224/13564 , H01L2224/1357 , H01L2224/13575 , H01L2224/13611 , H01L2224/13616 , H01L2224/13644 , H01L2224/13655 , H01L2224/13664 , H01L2224/1601 , H01L2224/16111 , H01L2224/16112 , H01L2224/16148 , H01L2224/16238 , H01L2224/16507 , H01L2224/81138 , H01L2224/81193 , H01L2924/00011 , H01L2924/0002 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/3511 , H01L2924/3841 , H01L2224/05552 , H01L2924/00 , H01L2224/81805 , H01L2924/206
摘要： A device includes a first work piece bonded to a second work piece. The first work piece includes a solder resist at a surface of the first work piece, wherein the solder resist includes a solder resist opening, and a bond pad in the solder resist opening. The second work piece includes a non-reflowable metal bump at a surface of the second work piece. A solder bump bonds the non-reflowable metal bump to the bond pad, with at least a portion of the solder bump located in the solder resist opening and adjoining the non-reflowable metal bump and the bond pad. A thickness of the solder resist is greater than about 50 percent a height of the solder bump, wherein the height equals a distance between the non-reflowable metal bump and the bond pad.
摘要翻译： 一种装置包括结合到第二工件的第一工件。 第一工件包括在第一工件的表面处的阻焊剂，其中阻焊剂包括阻焊剂开口，以及阻焊剂开口中的接合焊盘。 第二工件在第二工件的表面上包括不可回流的金属凸块。 焊料凸块将不可回流的金属凸块接合到接合焊盘，其中焊料凸块的至少一部分位于阻焊剂开口中并且邻接不可回流的金属凸块和接合焊盘。 阻焊剂的厚度大于焊料凸块的高度的约50％，其中高度等于不可回流金属凸块和接合垫之间的距离。
-
公开(公告)号：US20110186986A1
公开(公告)日：2011-08-04
申请号：US12697008
申请日：2010-01-29
IPC分类号： H01L23/498 , H01L21/768 , H01L21/50
CPC分类号： H01L21/50 , H01L21/768 , H01L23/498 , H01L24/11 , H01L24/13 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/13017 , H01L2224/13019 , H01L2224/13076 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/16503 , H01L2224/32503 , H01L2224/32507 , H01L2224/81193 , H01L2224/8181 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/014 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A T-shaped post for semiconductor devices is provided. The T-shaped post has an under-bump metallization (UBM) section and a pillar section extending from the UBM section. The UBM section and the pillar section may be formed of a same material or different materials. In an embodiment, a substrate, such as a die, wafer, printed circuit board, packaging substrate, or the like, having T-shaped posts is attached to a contact of another substrate, such as a die, wafer, printed circuit board, packaging substrate, or the like. The T-shaped posts may have a solder material pre-formed on the pillar section such that the pillar section is exposed or such that the pillar section is covered by the solder material. In another embodiment, the T-shaped posts may be formed on one substrate and the solder material formed on the other substrate.
摘要翻译： 提供了一种用于半导体器件的T形柱。 T形柱具有凸起下金属化（UBM）部分和从UBM部分延伸的柱部分。 UBM部分和支柱部分可以由相同的材料或不同的材料形成。 在一个实施例中，具有T形柱的衬底（例如管芯，晶片，印刷电路板，封装衬底等）被附接到另一个衬底（例如管芯，晶片，印刷电路板， 包装衬底等。 T形柱可以具有预先形成在柱部上的焊料材料，使得柱部分暴露或者使得柱部分被焊料材料覆盖。 在另一个实施例中，T形柱可以形成在一个基底上，并且焊料材料形成在另一个基底上。
-
公开(公告)号：US08476759B2
公开(公告)日：2013-07-02
申请号：US13308249
申请日：2011-11-30
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L23/293 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05086 , H01L2224/05091 , H01L2224/05124 , H01L2224/05541 , H01L2224/05572 , H01L2224/1145 , H01L2224/11462 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2924/00014 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
摘要翻译： 结构包括形成在接合焊盘下方的顶部金属连接器。 接合焊盘由第一钝化层和第二钝化层包围。 聚合物层进一步形成在第二钝化层上。 第一钝化层中的开口的尺寸小于顶部金属连接器的尺寸。 顶部金属连接器的尺寸小于第二钝化层中的开口的尺寸和聚合物层中的开口的尺寸。
-
-
-
-
-
-
-
-
-
搜索结果
171 条记录 (耗时 0.038 秒)
