公开(公告)号：US09214361B2

公开(公告)日：2015-12-15

申请号：US13749126

申请日：2013-01-24

申请人： FUJITSU LIMITED

发明人： Yoshikatsu Ishizuki ,  Shinya Sasaki ,  Motoaki Tani

IPC分类号： H01L21/00 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L23/31

CPC分类号： H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24195 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole.

摘要翻译： 一种制造半导体器件的方法，包括：将半导体元件放置在放置在具有第一通孔的支撑体上的粘合剂层上; 将部分放置在包括对应于第一通孔的部分的区域中，该部分位于支撑体上的粘合剂层上; 通过在其上放置有半导体元件和部件的粘合剂层上形成树脂层，形成衬底，所述衬底包括半导体元件，部分和树脂层; 以及通过将所述部件按压穿过所述第一通孔而从所述粘合剂层分离所述基板。

公开(公告)号：US09318426B2

公开(公告)日：2016-04-19

申请号：US13786991

申请日：2013-03-06

申请人： FUJITSU LIMITED ,  FUJITSU TEN LIMITED

发明人： Motoaki Tani ,  Shinya Iijima ,  Shinichi Sugiura ,  Hiromichi Watanabe

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/49811 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/09103 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/83104 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/80203 ,  H01L2224/11 ,  H01L21/78 ,  H01L2224/81 ,  H01L2924/01047 ,  H01L2224/05552

摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.

公开(公告)号：US20150189751A1

公开(公告)日：2015-07-02

申请号：US14564251

申请日：2014-12-09

申请人： FUJITSU LIMITED

发明人： Tomoyuki AKAHOSHI ,  Daisuke Mizutani ,  Motoaki Tani

IPC分类号： H05K1/11 ,  H05K3/00 ,  H05K3/46

CPC分类号： H05K3/4661 ,  H05K3/0035 ,  H05K3/427 ,  H05K2201/0959

摘要： A wiring board includes a conductor formed on an inner wall of a through hole made in a core board, resin formed inside the conductor in the through hole, and, for example, a land formed over the conductor and the resin. Vias are formed over the land. The vias are connected to a plurality of connection regions of the land extending over the conductor and the resin in the through hole. The land is held by the vias connected to the plurality of connection regions. This controls the thermal expansion of the resin to a land side and therefore prevents a fracture of the land.

摘要翻译： 布线板包括形成在芯板的通孔的内壁上的导体，形成在通孔中的导体内部的树脂，以及例如形成在导体和树脂上的平台。 通ias在这片土地上形成。 通孔连接到在导体上延伸的焊盘的多个连接区域和通孔中的树脂。 该焊盘由与多个连接区域连接的过孔保持。 这样可以控制树脂对岸面的热膨胀，防止土地的断裂。

公开(公告)号：US20170243808A1

公开(公告)日：2017-08-24

申请号：US15591511

申请日：2017-05-10

申请人： FUJITSU LIMITED

发明人： MAKOTO YOSHINO ,  Takahiro Kimura ,  Motoaki Tani

IPC分类号： H01L23/473 ,  B32B7/12 ,  B32B15/085 ,  H01L21/48 ,  B32B27/32 ,  B32B38/00 ,  B32B37/12 ,  B32B3/30 ,  B32B15/20

CPC分类号： H01L23/473 ,  B32B3/30 ,  B32B7/04 ,  B32B7/05 ,  B32B7/12 ,  B32B15/08 ,  B32B15/085 ,  B32B15/088 ,  B32B15/09 ,  B32B15/20 ,  B32B27/06 ,  B32B27/16 ,  B32B27/286 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/04 ,  B32B37/12 ,  B32B38/0008 ,  B32B38/0012 ,  B32B2250/02 ,  B32B2250/44 ,  B32B2255/06 ,  B32B2255/24 ,  B32B2307/302 ,  B32B2307/50 ,  B32B2307/538 ,  B32B2307/7265 ,  B32B2307/732 ,  B32B2307/748 ,  B32B2311/12 ,  B32B2323/10 ,  B32B2457/00 ,  C09J5/02 ,  C09J5/06 ,  C09J2203/326 ,  C09J2400/163 ,  C09J2400/166 ,  C09J2400/226 ,  G06F1/20 ,  H01L21/4882 ,  H01L23/3736 ,  H01L23/3737 ,  H01L2924/0002 ,  H01L2924/00

摘要： A joined body of the embodiments is a joined body which includes copper and resin, wherein in a joint surface of the copper to the resin, a triazine thiol derivative, or the triazine thiol derivative and a silane coupling agent are bonded to a base surface and the silane coupling agent is bonded to an oxide film formed on part of the joint surface, respectively, and the copper and the resin are molecularly joined to each other. This configuration makes it possible to obtain a joined body having high reliability by molecularly joining both the base surface and the oxide film of the copper, and the resin securely and achieving a strong joint of the copper and the resin at a time of joining the copper and the resin even though the oxide film is formed on part of the joint surface of the copper.

公开(公告)号：US09312151B2

公开(公告)日：2016-04-12

申请号：US13749159

申请日：2013-01-24

申请人： FUJITSU LIMITED

发明人： Shinya Sasaki ,  Yoshikatsu Ishizuki ,  Motoaki Tani

IPC分类号： H01L21/58 ,  H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2221/68318 ,  H01L2221/68381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2924/10253 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/19105 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes: providing a first adhesive layer on a support member; providing a film on the first adhesive layer; arranging a semiconductor element on the film; providing a resin layer on the film on which the semiconductor element is arranged, and forming a substrate including the semiconductor element and the resin layer on the film; and separating the film and the substrate from the first adhesive layer.

摘要翻译： 一种制造半导体器件的方法，包括：在支撑构件上提供第一粘合剂层; 在第一粘合剂层上提供薄膜; 在所述膜上布置半导体元件; 在其上布置半导体元件的膜上提供树脂层，并在膜上形成包括半导体元件和树脂层的基板; 以及从第一粘合剂层分离膜和基底。

公开(公告)号：US09177938B2

公开(公告)日：2015-11-03

申请号：US14453922

申请日：2014-08-07

申请人： FUJITSU LIMITED

发明人： Motoaki Tani ,  Keishiro Okamoto

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/367 ,  H01L23/31 ,  H01L23/13 ,  H01L23/14 ,  H01L23/373 ,  H01L23/498 ,  H01L23/66

CPC分类号： H01L24/83 ,  H01L21/78 ,  H01L23/13 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3737 ,  H01L23/49822 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/06155 ,  H01L2224/06181 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/33183 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1026 ,  H01L2924/1033 ,  H01L2924/10344 ,  H01L2924/1047 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/13064 ,  H01L2924/142 ,  H01L2924/15153 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00

摘要： A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

摘要翻译： 半导体装置包括：半导体器件，包括第一电极; 包括第二电极和凹部的基板; 以及散热粘合剂材料，用于将所述半导体器件设置在所述凹部中，以将所述第一电极布置成靠近所述第二电极，其中所述第一电极耦合到所述第二电极，并且所述散热粘合剂材料覆盖底表面， 半导体器件的侧表面的至少一部分。

公开(公告)号：US09136172B2

公开(公告)日：2015-09-15

申请号：US13747883

申请日：2013-01-23

申请人： FUJITSU LIMITED

发明人： Motoaki Tani ,  Yoshikatsu Ishizuki ,  Shinya Sasaki

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L21/78 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24195 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2224/19 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, includes: providing an adhesive layer on a support body; providing a semiconductor element on the adhesive layer; providing a resin layer on the adhesive layer, the semiconductor element being provided on the adhesive layer, and forming a substrate on the adhesive layer, the substrate including the semiconductor element and the resin layer; and removing the substrate from the adhesive layer, wherein an adhesive force of the adhesive layer in a direction in which the substrate is removed is less than an adhesive force of the adhesive layer in a planar direction in which the substrate is formed.

摘要翻译： 一种制造半导体器件的方法，包括：在支撑体上提供粘合剂层; 在所述粘合剂层上提供半导体元件; 在所述粘合剂层上设置树脂层，所述半导体元件设置在所述粘合剂层上，并且在所述粘合剂层上形成基板，所述基板包括所述半导体元件和所述树脂层; 并且从所述粘合剂层去除所述基板，其中所述粘合剂层沿所述基板被去除的方向的粘合力小于所述粘合剂层在形成所述基板的平面方向上的粘合力。