摘要:
A method for electrically coupling electrode pads comprising forming a reflowed solder bump on a first electrode pad supported by a first substrate. The reflowed solder bump includes a solder material having a solder melting temperature. The method further includes forming a second electrode pad on a second substrate. The second electrode pad has an electrode structure defined by at least one converging continuous arcuate surface terminating in an apex and having an electrode material whose melting temperature is greater than the solder melting temperature of the solder material. The solder bump is heated to reflow or to soften the solder material, and subsequently the apex of the second electrode pad is pressed or inserted into the heated solder bump to couple the first electrode pad to the second electrode pad. A method for solder bump reflow comprising pressing or inserting the apex of an electrode into a reflowed solder bumps, and then reflowing solder material of the reflowed solder bump. A semiconductor assembly including a semiconductor device having an electrode pad coupled to a semiconductor substrate and comprising an electrode structure defined by a pair of arcuate surfaces generally tangentially terminating in an apex.
摘要:
Disclosed is device and/or material integration into thin opto-electronic layers, which increase room for chip-mounting, and reduce the total system cost by eliminating the difficulty of optical alignment between opto-electronic devices and optical waveguides. Opto-electronic devices are integrated with optical waveguides in ultra thin polymer layers on the order of 1 &mgr;m to 250 &mgr;m in thickness.
摘要:
An interposer for providing power, ground, and signal connections between an integrated circuit chip or chips and a substrate. The inventive interposer includes a signal core and external power/ground connection wrap. The two sections may be fabricated and tested separately, then joined together using z-connection technology. The signal core is formed from a conductive power/ground plane positioned between two dielectric layers. A patterned metal layer is formed on each dielectric layer. The two metal layers are interconnected by a through via or post process. The conductive power/ground plane functions to reduce signal cross-talk between signal lines formed on the two patterned metal layers. The power/ground wrap includes an upper substrate positioned above the signal core and a lower substrate positioned below the signal core. The upper and lower substrates of the power/ground wrap are formed from a dielectric film having a patterned metal layer on both sides, with the patterned layers connected by a through via or post process. The two power/ground wrap substrates may be formed separately or from one substrate which is bent into a desired form (e.g., a “U” shape). The two power/ground substrates are maintained in their proper alignment relative to the signal core and to each other by edge connectors which are also connected to the signal core's intermediary power/ground plane.
摘要:
Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is then formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.
摘要:
Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is thee formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.
摘要:
A method of fabricating a multilayer interconnected substrate is disclosed. In one embodiment, the method includes providing a structure having a dielectric substrate having a first substantially planar surface and an opposing second substantially planar surface. A first conductive layer is disposed on the first substantially planar surface of the dielectric substrate, and an interface is present between the first conductive layer and the dielectric substrate. A blind via site is formed in the structure, and through the dielectric substrate to the interface between the first conductive layer and the dielectric substrate. The blind via site is filled with a conductive material by an electrolytic plating process.
摘要:
An interconnecting post for mounting a microelectronic device such as an integral circuit chip is fabricated with generally uniform cross-section, by forming a first layer of positive photoresist on a substrate, soft-baking that first layer and exposing it for a short time with a wide-apertured mask or simply a UV blank flood exposure. Without developing the first layer, a second layer of positive resist is then applied over the first layer, soft-baked, and then exposed with a narrow-apertured mask. During the soft-baking of the second layer, some of its activator in the photoresist compound diffuses into the exposed portion of the first layer and modifies its solubility in such a way that, when the layers are subsequently developed, the developer partially undercuts the unexposed portion of the first layer to form in the photoresist an opening of generally uniform cross-section. This opening can then be filled by plating to produce a strong, integral interconnect post.
摘要:
Three-dimensional opto-electronic modules having a plurality of opto-electronic (O/E) layers, with optical signals being routed between O/E layers within one or more three-dimensional volumes, are disclosed. In preferred embodiments, the O/E layers are disposed over and above one another with at least one of their edges aligned to one another. At least two of the O/E layers have waveguides with ends near the aligned edges. A plurality of Zconnector arrays are disposed between the O/E layers and within the three-dimensional volumes to provide a plurality of Zdirection waveguides. A first vertical optical coupler couples light from one waveguide in one O/E layer to a Z-direction waveguide, and a second vertical optical coupler couples the light from the Z-direction waveguide to a second waveguide in a second O/E layer. In further preferred embodiments, segments of the Z-connector arrays are held by a holding unit.
摘要:
Opto-electrical systems having electrical and optical interconnections formed in thin layers with thin-film active devices are disclosed. In one embodiment, optical connections are made between the edge of one substrate and the surface of another substrate with the use of photorefractive materials. In another embodiment, the optical connection is made by separating a optical film from the first substrate and coupling the first substrate and the optical film to separate receptacles located on the second substrate. Film optical link modules employing aspects of the invention are also disclosed.
摘要:
An interconnecting post for mounting a microelectronic device such as an integral circuit chip is fabricated with generally uniform cross-section, by forming a first layer of positive photoresist on a substrate, soft-baking that first layer and exposing it for a short time with a wide-apertured mask or simply a UV blank flood exposure. Without developing the first layer, a second layer of positive resist is then applied over the first layer, soft-baked, and then exposed with a narrow-apertured mask. During the soft-baking of the second layer, some of its activator in the photoresist compound diffuses into the exposed portion of the first layer and modifies its solubility in such a way that, when the layers are subsequently developed, the developer partially undercuts the unexposed portion of the first layer to form in the photoresist an opening of generally uniform cross-section. This opening can then be filled by plating to produce a strong, integral interconnect post.