Methods of planarizing structures on wafers and substrates by polishing
    4.
    发明授权
    Methods of planarizing structures on wafers and substrates by polishing 失效
    通过抛光对晶片和基板上的结构进行平面化的方法

    公开(公告)号:US5916453A

    公开(公告)日:1999-06-29

    申请号:US717266

    申请日:1996-09-20

    摘要: Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is then formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.

    摘要翻译: 公开了在基板和晶片的表面上形成的结构的平面化方法。 所述方法在所述表面和所述结构或所述结构的形成位置上形成平坦化层,使得所述层的顶表面在所述结构的位置之间具有低区域,并且使得所述低区域基本上位于所述结构 在低于结构顶部的平面内。 然后在平坦化层的低区域上形成抛光停止层,抛光停止层比平坦化层更能抵抗抛光,并且优选地,结构。 然后将所得表面抛光。 抛光可以通过例如标准机械抛光和化学机械抛光来实现。

    Methods of planarizing structures on wafers and substrates by polishing
    5.
    发明授权
    Methods of planarizing structures on wafers and substrates by polishing 失效
    通过抛光对晶片和基板上的结构进行平面化的方法

    公开(公告)号:US06733685B2

    公开(公告)日:2004-05-11

    申请号:US09881514

    申请日:2001-06-12

    IPC分类号: B44C122

    摘要: Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is thee formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.

    摘要翻译: 公开了在基板和晶片的表面上形成的结构的平面化方法。 所述方法在所述表面和所述结构或所述结构将被形成的位置上形成平坦化层,使得所述层的顶表面在所述结构的位置之间具有低区域,并且使得所述低区域基本上位于 在低于结构顶部的平面内。 在平坦化层的低面积上形成抛光停止层,抛光停止层比平坦化层更能抵抗抛光,优选结构。 然后将所得表面抛光。 抛光可以通过例如标准机械抛光和化学机械抛光来实现。

    Method of fabricating a substrate with a via connection
    6.
    发明授权
    Method of fabricating a substrate with a via connection 失效
    用通孔连接制造衬底的方法

    公开(公告)号:US06662443B2

    公开(公告)日:2003-12-16

    申请号:US09935378

    申请日:2001-08-22

    IPC分类号: H01K310

    摘要: A method of fabricating a multilayer interconnected substrate is disclosed. In one embodiment, the method includes providing a structure having a dielectric substrate having a first substantially planar surface and an opposing second substantially planar surface. A first conductive layer is disposed on the first substantially planar surface of the dielectric substrate, and an interface is present between the first conductive layer and the dielectric substrate. A blind via site is formed in the structure, and through the dielectric substrate to the interface between the first conductive layer and the dielectric substrate. The blind via site is filled with a conductive material by an electrolytic plating process.

    摘要翻译: 公开了一种制造多层互连衬底的方法。 在一个实施例中,该方法包括提供具有电介质基底的结构,其具有第一基本上平坦的表面和相对的第二基本上平坦的表面。 第一导电层设置在电介质基板的第一基本上平坦的表面上,并且在第一导电层和电介质基板之间存在界面。 在该结构中形成盲通孔部位,并且通过电介质基板到第一导电层和电介质基板之间的界面。 盲孔通过电镀工艺填充导电材料。

    Fabrication procedure for a stable post
    7.
    发明授权
    Fabrication procedure for a stable post 失效
    一个稳定的岗位的制作程序

    公开(公告)号:US5722162A

    公开(公告)日:1998-03-03

    申请号:US541219

    申请日:1995-10-12

    摘要: An interconnecting post for mounting a microelectronic device such as an integral circuit chip is fabricated with generally uniform cross-section, by forming a first layer of positive photoresist on a substrate, soft-baking that first layer and exposing it for a short time with a wide-apertured mask or simply a UV blank flood exposure. Without developing the first layer, a second layer of positive resist is then applied over the first layer, soft-baked, and then exposed with a narrow-apertured mask. During the soft-baking of the second layer, some of its activator in the photoresist compound diffuses into the exposed portion of the first layer and modifies its solubility in such a way that, when the layers are subsequently developed, the developer partially undercuts the unexposed portion of the first layer to form in the photoresist an opening of generally uniform cross-section. This opening can then be filled by plating to produce a strong, integral interconnect post.

    摘要翻译: 通过在基板上形成第一层正性光致抗蚀剂,通过在第一层上软化烘烤该第一层并将其暴露在短时间内,用一个整体电路芯片来形成用于安装诸如集成电路芯片的微电子器件的互连柱, 宽孔径面罩或简单的UV空白洪水曝光。 在不显影第一层的情况下,将第二层正性抗蚀剂涂覆在第一层上,软化,然后用窄孔径掩模曝光。 在第二层的软烘烤期间,光致抗蚀剂化合物中的一些活化剂扩散到第一层的暴露部分,并以这样的方式改变其溶解度,使得当这些层随后显影时,显影剂部分地削弱未曝光 第一层的部分以在光致抗蚀剂中形成具有大致均匀横截面的开口。 然后可以通过电镀填充该开口以产生强大的整体互连柱。

    Structure and fabrication procedure for a stable post
    10.
    发明授权
    Structure and fabrication procedure for a stable post 失效
    稳定桩的结构和制造程序

    公开(公告)号:US5930890A

    公开(公告)日:1999-08-03

    申请号:US858192

    申请日:1997-04-21

    摘要: An interconnecting post for mounting a microelectronic device such as an integral circuit chip is fabricated with generally uniform cross-section, by forming a first layer of positive photoresist on a substrate, soft-baking that first layer and exposing it for a short time with a wide-apertured mask or simply a UV blank flood exposure. Without developing the first layer, a second layer of positive resist is then applied over the first layer, soft-baked, and then exposed with a narrow-apertured mask. During the soft-baking of the second layer, some of its activator in the photoresist compound diffuses into the exposed portion of the first layer and modifies its solubility in such a way that, when the layers are subsequently developed, the developer partially undercuts the unexposed portion of the first layer to form in the photoresist an opening of generally uniform cross-section. This opening can then be filled by plating to produce a strong, integral interconnect post.

    摘要翻译: 通过在基板上形成第一层正性光致抗蚀剂,通过在第一层上软化烘烤该第一层并将其暴露在短时间内,用一个整体电路芯片来形成用于安装诸如集成电路芯片的微电子器件的互连柱, 宽孔径面罩或简单的UV空白洪水曝光。 在不显影第一层的情况下,将第二层正性抗蚀剂涂覆在第一层上,软化,然后用窄孔径掩模曝光。 在第二层的软烘烤期间,光致抗蚀剂化合物中的一些活化剂扩散到第一层的暴露部分,并以这样的方式改变其溶解度,使得当这些层随后显影时,显影剂部分地削弱未曝光 第一层的部分以在光致抗蚀剂中形成具有大致均匀横截面的开口。 然后可以通过电镀填充该开口以产生强大的整体互连柱。