公开(公告)号：US06686658B2

公开(公告)日：2004-02-03

申请号：US10231271

申请日：2002-08-30

申请人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

发明人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

IPC分类号： H01L2974

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

摘要翻译： 根据压接型半导体器件，在半导体器件的主电极和主电极板之间或布置在半导体元件的相应主平面上的中间电极板之间布置有内部具有宏观空位的金属体，以及 主电极板。

公开(公告)号：US06495924B2

公开(公告)日：2002-12-17

申请号：US09235384

申请日：1999-01-22

申请人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

发明人： Hironori Kodama ,  Mitsuo Katou ,  Mamoru Sawahata

IPC分类号： H01L2974

CPC分类号： H01L24/72 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00

摘要： In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

摘要翻译： 根据压接型半导体器件，在半导体器件的主电极和主电极板之间或布置在半导体元件的相应主平面上的中间电极板之间布置有内部具有宏观空位的金属体，以及 主电极板。

公开(公告)号：US20050029666A1

公开(公告)日：2005-02-10

申请号：US10487990

申请日：2002-08-27

申请人： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

发明人： Yasutoshi Kurihara ,  Yoshimasa Takahashi ,  Tsuneo Endoh ,  Mikio Negishi ,  Masashi Yamaura ,  Hirokazu Nakajima ,  Yosuke Sakurai ,  Hironori Kodama

IPC分类号： B23K35/02 ,  B23K35/26 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H05K3/28 ,  H05K3/34 ,  H01L23/48

CPC分类号： H01L24/85 ,  B23K35/0244 ,  B23K35/262 ,  C04B37/026 ,  C04B2237/12 ,  C04B2237/123 ,  C04B2237/124 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/368 ,  C04B2237/401 ,  C04B2237/407 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3677 ,  H01L23/49575 ,  H01L23/49805 ,  H01L23/552 ,  H01L23/642 ,  H01L24/01 ,  H01L24/13 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/29218 ,  H01L2224/29223 ,  H01L2224/29239 ,  H01L2224/29244 ,  H01L2224/29247 ,  H01L2224/29249 ,  H01L2224/29255 ,  H01L2224/29264 ,  H01L2224/29266 ,  H01L2224/2927 ,  H01L2224/29272 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/35121 ,  H05K3/284 ,  H05K3/3442 ,  H05K3/3484 ,  H05K2201/0215 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01029

摘要： A semiconductor device, in which a solder layer bonding chip parts and wiring members are enclosed with the resin layer, and the solder layer is comprised of a compound body in which metal powder is distributed in the matrix metal, is disclosed. When a semiconductor device in which the chip parts are installed in the wiring member with the solders, the soldering part is sealed with the resin is mounted secondly on the external wiring member, the outflow of the solders and the short circuit due to the outflow, the disconnections, and the displacement of the chip parts can be prevented.

摘要翻译： 公开了一种半导体器件，其中将粘合芯片部件和布线部件的焊料层封装在树脂层中，并且焊料层由金属粉末分布在基体金属中的复合体构成。 当将其中芯片部件与焊料一起安装在布线部件中的半导体器件时，将树脂密封的焊接部件二次安装在外部布线部件上，由于流出而导致焊料的流出和短路， 可以防止切断部件和芯片部件的位移。

公开(公告)号：US5277723A

公开(公告)日：1994-01-11

申请号：US762933

申请日：1991-09-19

申请人： Hironori Kodama ,  Masahide Okamoto ,  Hideo Suzuki ,  Satoru Ogihara ,  Tadahiko Moyoshi ,  Fumiyuki Kobayashi

发明人： Hironori Kodama ,  Masahide Okamoto ,  Hideo Suzuki ,  Satoru Ogihara ,  Tadahiko Moyoshi ,  Fumiyuki Kobayashi

IPC分类号： B32B18/00 ,  C04B35/645 ,  H01L21/48 ,  C04B37/00

CPC分类号： H01L21/4857 ,  B32B18/00 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/346 ,  C04B2237/361 ,  C04B2237/363 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/56 ,  C04B2237/62 ,  C04B2237/68 ,  C04B2237/76 ,  H01L2224/16 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/16152

摘要： A method of producing a sintered multi-layer ceramic body used for ceramic parts of various electronic devices such as multi-layer substrates for LSI packaging and highly functional structural materials and by applying a pressure and/or constraining force to an outermost surface of the laminate. The method is featured by the shape of the surfaces to which a pressure and/or constraining force are not applied, ranges of the pressure and/or the constraining force, and the like.

摘要翻译： 一种制造用于各种电子器件的陶瓷部件的烧结多层陶瓷体的制造方法，例如用于LSI封装的多层基板和高功能结构材料，并且通过对层压体的最外表面施加压力和/或约束力 。 该方法的特征在于未施加压力和/或约束力的表面的形状，压力范围和/或约束力等。

公开(公告)号：US5132257A

公开(公告)日：1992-07-21

申请号：US603439

申请日：1990-10-26

申请人： Hironori Kodama ,  Takaaki Suzuki ,  Kie Nakamura ,  Kunihiro Maeda

发明人： Hironori Kodama ,  Takaaki Suzuki ,  Kie Nakamura ,  Kunihiro Maeda

IPC分类号： C03C14/00 ,  C04B35/80

CPC分类号： C04B35/80 ,  C03C14/004 ,  C03C2214/04 ,  C03C2214/06 ,  C03C2214/20

摘要： A composite ceramic sintered body is made from a ceramic matrix comprised mainly of silicon nitride, silicon oxynitride or an inorganic oxide selected from alumina, mullite, zirconia, high silica glass, lithium-aluminosilicate glass, magnesium-aluminosilicate glass or barium-magnesium-aluminosilicate glass, containing both whiskers and particles of a material selected from silicon carbide, silicon nitride, silicon oxynitride, alumina and zirconia dispersed therein. The whiskers have a diameter of 0.1 to 5 .mu.m and the particles have an average particle size of 5 to 60 .mu.m. The composite ceramic sintered body is homogeneous and isotropic, and it has a high strength and high toughness at a high temperature and an excellent heat resistance and oxidation resistance.

摘要翻译： 复合陶瓷烧结体由主要由氮化硅，氮氧化硅或选自氧化铝，莫来石，氧化锆，高二氧化硅玻璃，铝 - 硅铝酸盐玻璃，铝 - 铝硅酸盐玻璃或铝 - 硅铝酸镁的无机氧化物组成的陶瓷基体制成。 玻璃，其含有晶须和分散在其中的选自碳化硅，氮化硅，氮氧化硅，氧化铝和氧化锆的材料的颗粒。 晶须的直径为0.1〜5μm，粒子的平均粒径为5〜60μm。 复合陶瓷烧结体是均匀且各向同性的，并且在高温下具有高强度和高韧性，并且具有优异的耐热性和抗氧化性。

公开(公告)号：US4965660A

公开(公告)日：1990-10-23

申请号：US364537

申请日：1989-06-12

申请人： Satoru Ogihara ,  Hironori Kodama ,  Nobuyuki Ushifusa ,  Kanji Otsuka

发明人： Satoru Ogihara ,  Hironori Kodama ,  Nobuyuki Ushifusa ,  Kanji Otsuka

IPC分类号： H01L23/36 ,  H01L23/02 ,  H01L23/057 ,  H01L23/367 ,  H01L23/373

CPC分类号： H01L23/057 ,  H01L23/367 ,  H01L23/3737 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/16195

摘要： An integrated circuit package produced by bonding a rear surface of an insulating substrate enclosed in the package to a heat sink such as a cooling fin by a resinous adhesive, which may include one or more fillers, having a Young's modulus of 500 kg/cm.sup.2 or less when formed into a film, has high reliability at the bonding portion and withstands without damages even if subjected to thermal shocks.

摘要翻译： 一种集成电路封装件，其通过将包含在封装中的绝缘基板的后表面通过树脂粘合剂（例如可以包括一个或多个填料）的散热器（例如冷却翅片）结合，其杨氏模量为500kg / cm 2，或 在形成膜时较少，在接合部分具有高可靠性，并且即使遭受热冲击也能够承受损坏。

公开(公告)号：US4729972A

公开(公告)日：1988-03-08

申请号：US816303

申请日：1986-01-06

申请人： Hironori Kodama ,  Akihiro Gotoo ,  Tadahiko Miyoshi ,  Hiroshi Sakamoto ,  Takaaki Suzuki

发明人： Hironori Kodama ,  Akihiro Gotoo ,  Tadahiko Miyoshi ,  Hiroshi Sakamoto ,  Takaaki Suzuki

IPC分类号： C04B35/565 ,  C04B35/575 ,  C04B35/56 ,  C04B35/16

CPC分类号： C04B35/565 ,  C04B35/575

摘要： The present invention relates to a sintered product containing silicon carbide as a main component which comprises a phase(a) containing at least one metal selected from among Al, Sc, Y and rare earth elements and oxygen, a particle phase(b) comprising at least one metal carbide selected from among carbides of Ti, Zr, Hf, Va, Nb, Ta, W and the like, a composite particle phase(c) comprising said phase(a) and said phase(b) surrounding the phase(a) and silicon carbide matrix(d) in which the above phase(a), (b) and (c) are dispersed.The silicon carbide sintered product of the present invention exhibits a remarkably high strength and a remarkably high toughness which have not been attained up to this time, so that it can form various heat-resistant structural materials having a high reliability.

摘要翻译： 本发明涉及含有碳化硅作为主要成分的烧结产品，该烧结产品包括含有选自Al，Sc，Y和稀土元素和氧中的至少一种金属的相（a），含有 选自Ti，Zr，Hf，Va，Nb，Ta，W等的碳化物中的至少一种金属碳化物，包含所述相（a）和所述相（b）的复合粒子相（c） ）和上述相（a），（b）和（c）分散的碳化硅基体（d）。 本发明的碳化硅烧结体在此之前显示出非常高的强度和显着的高韧性，从而可以形成具有高可靠性的各种耐热结构材料。

公开(公告)号：US07075201B2

公开(公告)日：2006-07-11

申请号：US10642584

申请日：2003-08-19

申请人： Yoshimasa Takahashi ,  Hironori Kodama ,  Yutaka Kobayashi ,  Keiichi Mashino ,  Syouju Masumoto

发明人： Yoshimasa Takahashi ,  Hironori Kodama ,  Yutaka Kobayashi ,  Keiichi Mashino ,  Syouju Masumoto

IPC分类号： H02K11/00

CPC分类号： H01L23/3737 ,  H01L23/3672 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02K9/06 ,  H02K11/048 ,  H01L2924/00 ,  H01L2924/00012

摘要： A multi-phase alternating-current rotational electric machine wherein semiconductor switching devices are electrically insulated from heat sinks, and the heat sinks are grounded to the housing and thermally separated in each phase.

摘要翻译： 一种多相交流旋转电机，其中半导体开关器件与散热器电绝缘，并且散热器接地到壳体并在每相中热分离。

公开(公告)号：US06452261B1

公开(公告)日：2002-09-17

申请号：US09380645

申请日：1999-09-07

申请人： Hironori Kodama ,  Masahiro Nagasu ,  Hirokazu Inoue ,  Yasuo Osone ,  Shigeta Ueda ,  Kazuji Yamada

发明人： Hironori Kodama ,  Masahiro Nagasu ,  Hirokazu Inoue ,  Yasuo Osone ,  Shigeta Ueda ,  Kazuji Yamada

IPC分类号： H01L2348

CPC分类号： H01L25/112 ,  H01L25/072 ,  H01L2924/0002 ,  H01L2924/00

摘要： Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

摘要翻译： 从控制电极引出的内置在平坦封装中的多个芯片的控制电极布线以及为了使控制电极布线与主电极布线绝缘而设置的绝缘构件也具有将各个半导体芯片定位在 扁平包装。 此外，一体式控制电极布线网被容纳在封装的公共电极中，并且从各个半导体芯片的控制电极引出的电极连接到网以简化大量栅极的处理 信号线。

公开(公告)号：US5045922A

公开(公告)日：1991-09-03

申请号：US583144

申请日：1990-09-17

申请人： Hironori Kodama ,  Satoru Ogihara ,  Hideo Arakawa ,  Hirokazu Inoue ,  Yoshiyuki Yasutomi ,  Tadahiko Miyoshi

发明人： Hironori Kodama ,  Satoru Ogihara ,  Hideo Arakawa ,  Hirokazu Inoue ,  Yoshiyuki Yasutomi ,  Tadahiko Miyoshi

IPC分类号： H01L25/18 ,  H01L23/538 ,  H01L25/04 ,  H01L25/065 ,  H01L25/10 ,  H05K1/02 ,  H05K1/03 ,  H05K1/14 ,  H05K1/18

CPC分类号： H05K1/0271 ,  H01L23/5383 ,  H01L23/5385 ,  H01L25/0655 ,  H01L25/105 ,  H05K1/0206 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/1005 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/16152 ,  H05K1/0201 ,  H05K1/0306 ,  H05K1/141 ,  H05K1/181 ,  H05K2201/068 ,  H05K2201/10522 ,  H05K2201/10704 ,  H05K2201/10734

摘要： An installation structure of integrated circuit devices, in which two or more types of integrated circuit devices of different base materials are installed onto the same installation substrate. Since the installation structure has a construction according to different characteristics such as a thermal conductivity, heat generation amount, thermal expansion coefficient and the like of the integrated circuit devices made of different materials, the reliability of each device and its connection and the reduction of the costs required for the cooling method can be presented.

摘要翻译： 集成电路装置的安装结构，其中不同基材的两种或更多种集成电路装置安装在同一安装基板上。 由于安装结构具有根据由不同材料制成的集成电路器件的热导率，发热量，热膨胀系数等不同特性的结构，因此每个器件的可靠性及其连接以及减少 可以呈现冷却方法所需的成本。