摘要:
The multi-layer ceramic substrate of this invention includes conductor layers and insulating layers disposed between the conductor layers. The insulating layers include the layers of a sintered body principally composed of mullite and the layers of a sintered body principally composed of alumina. This multi-layer ceramic substrate is produced by laminating the green sheets and sintering the laminate. The green sheets principally composed of mullite and the green sheet principally composed of alumina are prepared, and they are laminated and sintered.
摘要:
A method of producing a sintered multi-layer ceramic body used for ceramic parts of various electronic devices such as multi-layer substrates for LSI packaging and highly functional structural materials and by applying a pressure and/or constraining force to an outermost surface of the laminate. The method is featured by the shape of the surfaces to which a pressure and/or constraining force are not applied, ranges of the pressure and/or the constraining force, and the like.
摘要:
An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.
摘要:
A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.
摘要:
A composite sintered oxide resistor comprising crystal grains of zinc oxide and crystal grains of a zinc oxide compound of other metal or semi-metal element than zinc, and a grain boundary layer having an electric resistance equal to or lower than that of the crystal grains and which of zinc oxide between the individual crystal grains has a very large withstanding capacity against switch surge, a small non-linear coefficient of voltage in the voltage-current characteristics, a positive, smaller resistance-temperature coefficient, and a small percent change in resistivity after heat treatment at 500.degree. C. in the atmosphere.
摘要:
A ceramic multilayer circuit board comprising ceramic layers and wiring conductor layers laminated alternately, in which the ceramic layer has a thermal expansion coefficient lower than that of the wiring conductor and not lower than one half of that of the conductor layer and is formed from a glass which softens at a temperature not higher than the melting point of the wiring conductor layer; a semiconductor module having a high reliability in its solder joint part comprising said ceramic multilayer circuit board mounted with a ceramic carrier substrate being mounted with a semiconductor device, said board being able to use a silver or copper conductor having a good electro-conductivity; and an amorphous glass powder for said ceramic multilayer circuit board.
摘要:
An installation structure of integrated circuit devices, in which two or more types of integrated circuit devices of different base materials are installed onto the same installation substrate. Since the installation structure has a construction according to different characteristics such as a thermal conductivity, heat generation amount, thermal expansion coefficient and the like of the integrated circuit devices made of different materials, the reliability of each device and its connection and the reduction of the costs required for the cooling method can be presented.
摘要:
A multi-layer ceramic wiring board consisting of alternately laminated ceramic insulating substrates and wiring conductor layers in which the inner-layer ceramic insulating substrates contacting the inside layers of signal wiring conductor are made of a ceramic insulator having a relative dielectric constant of 6.0 or below and a relatively low density and the ceramic insulating substrates of other layers are made of a ceramic insulator having a tensile strength of 4 kgf/mm.sup.2 or above and a relatively high density. In preparation of the board, each of the inner-layer ceramic insulating substrates is preferably formed from a green sheet obtained by drying a thin layer of a slurry containing 70 to 90 parts of ceramic filler particles having a particle size of 5 .mu.m or greater and 30 to 10 parts of glass powder while each of other ceramic insulating substrates is preferably formed from a green sheet obtained by drying a thin layer of a slurry containing 70 to 90 parts of ceramic filler particles having a particle size of less than 5 .mu.m and 30 to 10 parts of glass powder.
摘要翻译:由交替层叠的陶瓷绝缘基板和布线导体层构成的多层陶瓷布线板,其中与信号布线导体的内层接触的内层陶瓷绝缘基板由相对介电常数为6.0以下的陶瓷绝缘体制成 并且其它层的陶瓷绝缘基板由拉伸强度为4kgf / mm 2以上且密度较高的陶瓷绝缘体制成。 在制备板时,每个内层陶瓷绝缘基板优选由通过干燥含有70至90份粒度为5μm或更大的陶瓷填料颗粒的浆料薄层而获得的生片形成 和30〜10份的玻璃粉末,而其它陶瓷绝缘基板中的每一个优选由通过干燥含有70-90份粒径小于5μm的陶瓷填料颗粒的浆料薄层而获得的生片形成 和30〜10份玻璃粉末。
摘要:
A silicon carbide sintered body comprising silicon carbide as principal constituent, a first component for providing electrical insulating properties to said silicon carbide, said first component comprising at least one of metallic beryllium, beryllium compounds, boron and boron compounds and contained in a total amount of 0.01 to 3.5% by weight calculated as metal, and a second component which can further promote said silicon carbide sinterability provided by said first component and which does not diffuse easily in the particles of said silicon carbide, said second component comprising at least one substance selected from the Group I elements exclusive of hydrogen and francium, Group II elements exclusive of beryllium, radium and mercury, Group III elements exclusive of boron and aluminum, Group IV elements exclusive of carbon, Group V elements, Group VIa elements, Group VIIa elements Group VIII elements exclusive of iron, and compounds thereof, and contained in a total amount of 0.01 to 10% by weight, with the remainder substantially comprising silicon carbide. This silicon carbide sintered body has an electrical resistivity of 10.sup.7 .OMEGA..cm or above at room temperature and is also excellent in electrical insulating properties and can be advantageously used as substrates for semiconductor devices, etc.
摘要:
Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.