公开(公告)号：US20160035898A1

公开(公告)日：2016-02-04

申请号：US14879423

申请日：2015-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Woo-young Yang ,  Chang-youl Moon ,  Yong-young Park ,  Jeong-yub Lee

IPC: H01L29/786 ,  H01L29/161 ,  H01L29/45 ,  H01L29/16 ,  H01L29/04

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶质半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US20180190909A1

公开(公告)日：2018-07-05

申请号：US15635990

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongyoung PARK ,  Kideok BAE ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L51/00 ,  H01L21/66 ,  H01L21/67 ,  H01L51/44

CPC classification number: H01L22/12 ,  G01M11/0228 ,  G01N3/068 ,  G01N3/08 ,  G01N2203/0278 ,  G01N2203/0282 ,  G01N2203/0641 ,  H01L21/67288 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26 ,  H01L51/0031 ,  H01L51/0096 ,  H01L51/5253 ,  Y02E10/549

Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.

公开(公告)号：US20160247906A1

公开(公告)日：2016-08-25

申请号：US15026681

申请日：2014-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongsung KIM ,  Changyoul MOON ,  Yongyoung PARK ,  Wooyoung YANG ,  Jeongyub LEE ,  Jooho LEE

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/10 ,  H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L29/16 ,  H01L21/3105 ,  H01L21/306 ,  H01L29/47 ,  H01L29/06

CPC classification number: H01L29/78 ,  H01L21/30625 ,  H01L21/31051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/7781

Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括源极，漏极，源极和漏极之间的半导体元件以及设置在源极和半导体元件上并与漏极间隔开的石墨烯层。 源极和漏极的表面与半导体元件的表面基本上共面。 半导体元件可以与源极间隔开并且可以接触漏极。 石墨烯层可以具有平面结构。 栅极绝缘层和栅极可以设置在石墨烯层上。 半导体器件可以是晶体管。 该半导体器件可以具有一个截击器结构。 半导体器件可以是平面型石墨烯阻尼器。

公开(公告)号：US20170084619A1

公开(公告)日：2017-03-23

申请号：US15209371

申请日：2016-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  lnkyeong YOO ,  Hojung KIM ,  Seong ho CHO

IPC: H01L27/115 ,  H01L21/265 ,  H01L21/28 ,  H01L21/308 ,  H01L29/51 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L27/1157 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C2213/53 ,  G11C2213/79 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/762 ,  H01L21/76202 ,  H01L21/76224 ,  H01L27/1052 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66833 ,  H01L29/685 ,  H01L45/00

Abstract: Example embodiments relate to a method of fabricating a synapse memory device capable of being driven at a low voltage and realizing a multi-level memory. The synapse memory device includes a two-transistor structure in which a drain region of a first transistor including a memory layer and a first source region of a second transistor share a source-drain shared area. The synapse memory device is controlled by applying a voltage through the source-drain shared area. The memory layer includes a charge trap layer and a threshold switching layer, and may realize a non-volatile multi-level memory function.

公开(公告)号：US20170058402A1

公开(公告)日：2017-03-02

申请号：US15014568

申请日：2016-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Yongsung KIM ,  Jaikwang SHIN ,  Wooyoung YANG

IPC: C23C16/455 ,  C23C16/44

Abstract: A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.

Abstract translation: 可以提供组合空间原子层沉积（CS-ALD）装置的喷头。 CS-ALD装置的喷头可以包括多个淋浴块。 每个淋浴块可以包括多个单元模块。 每个淋浴块和每个单元模块可以彼此独立地控制。 多个单元模块中的每一个可以包括源气体喷射喷嘴，吹扫气体喷射喷嘴，反应气体喷射喷嘴和喷射喷嘴之间的排气区域。 多个淋浴块可以彼此分离。 注射喷嘴的气体注入区域可以与排气区域分离。

公开(公告)号：US20160197122A1

公开(公告)日：2016-07-07

申请号：US14794532

申请日：2015-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Satoh RYUICHI ,  Kyu Sik KIM ,  Woo Young YANG ,  Yeon-Hee KIM ,  Yong-Young PARK ,  Xianyu WENXU ,  Chang Seung LEE ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/107 ,  H01L2251/303

Abstract: Organic photoelectronic devices and image sensors including the organic photoelectronic devices, include a first light-transmitting electrode at a side where light enters, a second light-transmitting electrode opposite to the first light-transmitting electrode, an active layer between the first and second light-transmitting electrodes, and an ultraviolet (UV) ray blocking layer on the first light-transmitting electrode, wherein the ultraviolet (UV) ray blocking layer includes at least one metal oxide having a light transmittance of less than or equal to about 75% for light of less than or equal to about 380 nm.

Abstract translation: 包括有机光电子器件的有机光电子器件和图像传感器包括在光入射侧的第一透光电极，与第一透光电极相对的第二透光电极，在第一和第二光之间的有源层 - 透射电极和在第一透光电极上的紫外（UV）光线阻挡层，其中紫外线（UV）光线阻挡层包括至少一种具有小于或等于约75％的透光率的金属氧化物，用于 小于或等于约380nm的光。

公开(公告)号：US20150214037A1

公开(公告)日：2015-07-30

申请号：US14682820

申请日：2015-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Yeon-hee Kim ,  Chang-youl Moon ,  Yong-young Park

IPC: H01L21/02 ,  H01L21/308 ,  H01L29/20 ,  H01L21/306

CPC classification number: H01L21/0254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/2003

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。

公开(公告)号：US20140174640A1

公开(公告)日：2014-06-26

申请号：US13918066

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Jeong-yub LEE ,  Chang-youl MOON ,  Yong-young PARK ,  Woo-young YANG ,  Yong-sung KIM ,  Joo-ho LEE

IPC: B29C67/24

CPC classification number: B29C67/24 ,  H01L51/0023 ,  H01L51/0045 ,  H01L51/102 ,  H01L51/442 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract translation: 转移石墨烯的方法包括在第一基板上顺序地形成牺牲层和石墨烯层，将石墨烯层粘合到目标层，以及使用激光去除牺牲层并将第一基板与石墨烯层分离。

公开(公告)号：US20140162053A1

公开(公告)日：2014-06-12

申请号：US13866389

申请日：2013-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-yub LEE ,  Xianyu WENXU ,  Jun-sik HWANG ,  Chang-youl MOON

IPC: B32B7/12 ,  B32B37/12 ,  B32B38/00

CPC classification number: B32B7/12 ,  B32B7/10 ,  B32B15/08 ,  B32B15/20 ,  B32B27/08 ,  B32B27/281 ,  B32B27/283 ,  B32B27/302 ,  B32B27/32 ,  B32B37/12 ,  B32B38/0008 ,  B32B38/162 ,  B32B2250/40 ,  B32B2457/14 ,  H01L21/187 ,  H01L21/306 ,  Y10T428/265 ,  Y10T428/31663

Abstract: A bonded substrate structure includes a siloxane-based monomer layer between a first substrate and a second substrate, the siloxane-based monomer layer bonding the first substrate and the second substrate. The first substrate and the second substrate may be one of a silicon substrate and a silicon oxide substrate, respectively.

Abstract translation: 键合衬底结构包括在第一衬底和第二衬底之间的硅氧烷基单体层，所述硅氧烷基单体层接合第一衬底和第二衬底。 第一基板和第二基板可以分别是硅基板和氧化硅基板之一。

公开(公告)号：US20140117349A1

公开(公告)日：2014-05-01

申请号：US13949588

申请日：2013-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Woo-young YANG ,  Chang-youl MOON ,  Yong-young PARK ,  Jeong-yub LEE

IPC: H01L21/02 ,  H01L29/04

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。