MICROARRAY-BASED ASSAY INTEGRATED WITH PARTICLES FOR ANALYZING MOLECULAR INTERACTIONS
    107.
    发明申请
    MICROARRAY-BASED ASSAY INTEGRATED WITH PARTICLES FOR ANALYZING MOLECULAR INTERACTIONS 有权
    用于分析分子相互作用的基于微阵列的测定

    公开(公告)号:US20130217584A1

    公开(公告)日:2013-08-22

    申请号:US13814213

    申请日:2010-08-06

    CPC classification number: C12Q1/6837 C12Q2563/143 C12Q2563/149 C12Q2563/155

    Abstract: A microarray-based assay is provided, which is used for analyzing molecular interactions, including polynucleotides, polypeptides, antibodies, small molecule compounds, peptides and carbohydrates. Such method comprises coupling a target molecule to a particle and then binding to a probe molecule on microarray. In particular, multiplexed genetic analysis of nucleic acid fragments can be implemented. Specific genes, single nucleotide polymorphisms or gene mutations, such as deletions, insertions, and indels, can be identified. Coupled with microarray, the particles, themselves or further modified, facilitate the detection of results with non-expensive devices or even naked eyes. This technology enables the detection and interpretation of molecular interactions in an efficient and cost effective way.

    Abstract translation: 提供基于微阵列的测定法,其用于分析分子相互作用,包括多核苷酸,多肽,抗体,小分子化合物,肽和碳水化合物。 这种方法包括将靶分子偶联到颗粒上,然后与微阵列上的探针分子结合。 特别地,可以实现核酸片段的多重遗传分析。 可以鉴定特异性基因,单核苷酸多态性或基因突变,例如缺失,插入和插入。 与微阵列结合,颗粒本身或进一步修饰,有助于使用非昂贵装置甚至肉眼检测结果。 该技术能够以有效和成本有效的方式检测和解释分子相互作用。

    PROCESS FOR FORMING SEMICONDUCTOR STRUCTURE
    108.
    发明申请
    PROCESS FOR FORMING SEMICONDUCTOR STRUCTURE 有权
    形成半导体结构的方法

    公开(公告)号:US20130210198A1

    公开(公告)日:2013-08-15

    申请号:US13370477

    申请日:2012-02-10

    Applicant: Jing-Cheng LIN

    Inventor: Jing-Cheng LIN

    Abstract: A method for forming a semiconductor structure. A semiconductor substrate including a plurality of dies mounted thereon is provided. The substrate includes a first portion proximate to the dies and a second portion distal to the dies. In some embodiments, the first portion may include front side metallization. The second portion of the substrate is thinned and a plurality of conductive through substrate vias (TSVs) is formed in the second portion of the substrate after the thinning operation. Prior to thinning, the second portion may not contain metallization. In one embodiment, the substrate may be a silicon interposer. Further back side metallization may be formed to electrically connect the TSVs to other packaging substrates or printed circuit boards.

    Abstract translation: 一种形成半导体结构的方法。 提供了包括安装在其上的多个管芯的半导体基板。 衬底包括靠近模具的第一部分和远离模具的第二部分。 在一些实施例中,第一部分可以包括前侧金属化。 衬底的第二部分变薄,并且在变薄操作之后,在衬底的第二部分中形成多个导电贯通衬底通孔(TSV)。 在变薄之前,第二部分可以不包含金属化。 在一个实施例中,衬底可以是硅插入器。 可以形成另外的背侧金属化以将TSV电连接到其他封装基板或印刷电路板。

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