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    RFID tag and micro chip integration design
    113.
    发明授权
    RFID tag and micro chip integration design 有权
    RFID标签和微芯片集成设计

    公开(公告)号：US09542638B2

    公开(公告)日：2017-01-10

    申请号：US14183427

    申请日：2014-02-18

    Applicant: LuxVue Technology Corporation

    Inventor： Vikram Pavate ,  Andreas Bibl

    IPC: G06K19/06 ,  G06K19/077 ,  H05K1/02 ,  H05K1/16

    CPC classification number: G06K19/07783 ,  H05K1/0293 ,  H05K1/165 ,  H05K2201/10098 ,  H05K2203/107 ,  H05K2203/175 ,  Y10T29/49144 ,  Y10T29/53174

    Abstract: An integrated micro chip, method of integrating a micro chip, and micro chip integration system are described. In an embodiment, a micro chip such as a micro RFID chip or integrated passive device (IPD) is electrostatically transferred and bonded to a conductive pattern including a line break. In an embodiment, the line break is formed by a suitable cutting technique such as laser laser ablation, ion beam etching, or photolithography with chemical etching to accommodate the micro chip.

    Abstract translation: 描述了集成微芯片，集成微芯片的方法和微芯片集成系统。 在一个实施例中，诸如微型RFID芯片或集成无源器件（IPD）的微芯片被静电转印并结合到包括断线的导电图案。 在一个实施例中，线断裂通过合适的切割技术形成，例如激光激光烧蚀，离子束蚀刻或具有化学蚀刻的光刻以适应微芯片。

    Compliant electrostatic transfer head with spring support layer
    114.
    发明授权
    Compliant electrostatic transfer head with spring support layer 有权
    符合静电转印头带弹簧支撑层

    公开(公告)号：US09425151B2

    公开(公告)日：2016-08-23

    申请号：US14307325

    申请日：2014-06-17

    Applicant: LuxVue Technology Corporation

    Inventor： Dariusz Golda ,  Stephen P. Bathurst ,  John A. Higginson ,  Andreas Bibl ,  Jeffrey Birkmeyer

    IPC: H01L21/768 ,  H01L23/538 ,  H01L23/00

    CPC classification number: H01L23/5384 ,  B81C99/002 ,  H01L21/76898 ,  H01L24/75 ,  H01L24/95

    Abstract: A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a cavity in a base substrate, a spring support layer on the base substrate, and a patterned device layer on the spring support layer. The spring support layer includes a spring support layer beam profile that extends over and is deflectable toward the cavity, and the patterned device layer includes an electrode beam profile that is supported by the spring support layer beam profile and extends over and is deflectable toward the cavity.

    Abstract translation: 描述了柔性静电转印头和形成顺应性静电转印头的方法。 在一个实施例中，顺应性静电转印头包括基底衬底中的空腔，在基底衬底上的弹簧支撑层，以及弹簧支撑层上的图案化器件层。 弹簧支撑层包括弹簧支撑层梁轮廓，该弹性支撑层梁型材向空腔延伸并且可偏转，并且图案化的装置层包括由弹簧支撑层梁轮廓支撑并且朝向腔体可偏转的电极梁轮廓 。

    Micro device transfer head array with metal electrodes
    120.
    发明授权
    Micro device transfer head array with metal electrodes 有权
    具有金属电极的微器件转印头阵列

    公开(公告)号：US09255001B2

    公开(公告)日：2016-02-09

    申请号：US13710438

    申请日：2012-12-10

    Applicant: LuxVue Technology Corporation

    Inventor： Dariusz Golda ,  Andreas Bibl

    IPC: H05K1/00 ,  B81C99/00

    CPC classification number: B81C99/002 ,  H01L21/6835 ,  H01L2221/68354

    Abstract: A monopolar and bipolar micro device transfer head array and method of forming a monopolar and bipolar micro device transfer array are described. In an embodiment, a micro device transfer head array includes a base substrate, a first insulating layer formed over the base substrate, and an array of mesa structures. A second insulating layer may be formed over the mesa structure, a patterned metal layer over the second insulating layer, and a dielectric layer covering the metal layer.

    Abstract translation: 描述了单极和双极微器件转移头阵列和形成单极和双极微器件转移阵列的方法。 在一个实施例中，微器件转移头阵列包括基底基板，形成在基底基板上的第一绝缘层和台面结构阵列。 可以在台面结构之上形成第二绝缘层，在第二绝缘层上形成图案化金属层，以及覆盖金属层的电介质层。

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