公开(公告)号：US20110061710A1

公开(公告)日：2011-03-17

申请号：US12875807

申请日：2010-09-03

Applicant: Keon Jae LEE ,  Sang Yong Lee ,  Seung Jun Kim

Inventor： Keon Jae LEE ,  Sang Yong Lee ,  Seung Jun Kim

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/1856 ,  H01L31/0304 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/0725 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.

Abstract translation: 提供一种太阳能电池及其制造方法。 制造太阳能电池的方法包括在牺牲基板上堆叠含有GaN的太阳能电池器件层，蚀刻太阳能电池器件层以暴露牺牲基板，从而形成包括太阳能电池器件层的各个异相蚀刻的一个或多个太阳能电池器件 暴露的牺牲衬底，将太阳能电池器件接触到冲压处理器以从牺牲衬底移除太阳能电池器件，并将太阳能电池器件转移到接收衬底上。 可以在诸如硅衬底的衬底上执行高温半导体工艺以将太阳能电池器件转移到衬底上，从而制造柔性太阳能电池。 此外，大量的太阳能电池可以在大面积上优良地对准。 此外，可以制造经济的太阳能电池。

公开(公告)号：US20100207172A1

公开(公告)日：2010-08-19

申请号：US12704975

申请日：2010-02-12

Applicant: Fujio Masuoka ,  Keon Jae Lee

Inventor： Fujio Masuoka ,  Keon Jae Lee

IPC: H01L29/78 ,  H01L21/20 ,  H01L29/04

CPC classification number: H01L29/7827 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823885 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/66666 ,  H01L29/78642

Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.

Abstract translation: 与用于场效应晶体管（FET）的设计和制造中的常规平面CMOS技术相反，本发明提供了一种SGT CMOS器件，其形成在常规基板上，该传统基板使用与通道类型和柱形 FET，而不需要复杂的器件制造工艺。 此外，与改变每个平面FET中的表面取向的设计技术不同，本发明被设计为改变每个SGT中的表面取向以实现载流子迁移率的改善。 因此，可以在公共基板上形成具有各种晶面的多个SGT，以实现多种不同的载流子迁移率，从而获得期望的性能。

公开(公告)号：US07622367B1

公开(公告)日：2009-11-24

申请号：US11145574

申请日：2005-06-02

Applicant: Ralph G. Nuzzo ,  John A. Rogers ,  Etienne Menard ,  Keon Jae Lee ,  Dahl-Young Khang ,  Yugang Sun ,  Matthew Meitl ,  Zhengtao Zhu

Inventor： Ralph G. Nuzzo ,  John A. Rogers ,  Etienne Menard ,  Keon Jae Lee ,  Dahl-Young Khang ,  Yugang Sun ,  Matthew Meitl ,  Zhengtao Zhu

IPC: H01L21/322

CPC classification number: H01L29/76 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Abstract translation: 本发明提供了用于制造可印刷半导体元件并将可印制半导体元件组装到衬底表面上的方法和装置。 本发明的方法，装置和装置部件能够在包含聚合物材料的基底上产生宽范围的灵活的电子和光电器件和器件阵列。 本发明还提供了拉伸配置中能够具有良好性能的可拉伸半导体结构和可拉伸电子器件。

公开(公告)号：US10566477B2

公开(公告)日：2020-02-18

申请号：US13010108

申请日：2011-01-20

Applicant: Keon Jae Lee ,  Sang Yong Lee

Inventor： Keon Jae Lee ,  Sang Yong Lee

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L31/0392 ,  H01L31/0304 ,  H01L31/18

Abstract: Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on one side surface of the device layer, and removing the sacrificial substrate. A large area device may be transferred onto the flexible substrate with superior alignment to realize and manufacture the flexible device. In addition, since mass production is possible, the economic feasibility may be superior. Also, when a large area solar cell having a thin thickness is manufactured, since a limitation such as twisting of a thin film of a solar cell may be effectively solved, the economic feasibility and stability may be superior.

公开(公告)号：US08822970B2

公开(公告)日：2014-09-02

申请号：US13401449

申请日：2012-02-21

Applicant: Yeon Sik Jung ,  Keon Jae Lee ,  Jae Won Jeong ,  Jae Suk Choi ,  Geon Tae Hwang ,  Beom Ho Mun ,  Byoung Kuk You ,  Seung Jun Kim

Inventor： Yeon Sik Jung ,  Keon Jae Lee ,  Jae Won Jeong ,  Jae Suk Choi ,  Geon Tae Hwang ,  Beom Ho Mun ,  Byoung Kuk You ,  Seung Jun Kim

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1675

Abstract: Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.

Abstract translation: 提供了使用绝缘纳米颗粒的相变存储器件，柔性相变存储器件及其制造方法。 相变存储器件包括电极和相变层，其中根据从电极产生的热量发生相变，其中由自组装的嵌段共聚物形成的绝缘纳米颗粒设置在电极和相 - 改变层正在进行结晶和非晶化。

公开(公告)号：US08557619B2

公开(公告)日：2013-10-15

申请号：US12852463

申请日：2010-08-07

Applicant: Keon Jae Lee ,  Sang Yong Lee ,  Seung Jun Kim

Inventor： Keon Jae Lee ,  Sang Yong Lee ,  Seung Jun Kim

IPC: H01L21/00

CPC classification number: H01L21/00 ,  H01L27/153 ,  H01L33/0079

Abstract: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.

Abstract translation: 提供了一种制造LED显示器的方法。 该方法分别提供形成RGB LED器件层的牺牲基板。 该方法分别对LED器件层进行蚀刻和图案分别制造RGB LED器件。 该方法移除LED器件下侧的牺牲衬底。 该方法将冲压处理器与RGB LED器件接触，以将RGB LED器件与牺牲衬底分离。 该方法将附接到冲压处理器的LED装置传送到接收基板。

公开(公告)号：US20130082361A1

公开(公告)日：2013-04-04

申请号：US13396302

申请日：2012-02-14

Applicant: Keon Jae LEE ,  Kwyro Lee ,  Geon Tae Hwang ,  Donggu Im

Inventor： Keon Jae LEE ,  Kwyro Lee ,  Geon Tae Hwang ,  Donggu Im

IPC: H01L29/02 ,  H01L21/762

CPC classification number: A61N1/375 ,  H01L21/76256 ,  H01L23/3107 ,  H01L23/3171 ,  H01L27/1266 ,  H01L29/7842 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby.The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.

Abstract translation: 提供一种制造柔性装置的方法和由此制造的柔性装置。 根据本公开的制造柔性器件的方法包括：在绝缘体上硅（SOI）衬底的上硅层上制造器件，其包括依次堆叠的下硅层，绝缘层和上硅层; 将第二硅衬底粘附到所述上硅层; 去除下硅层; 使用所述第二硅衬底将所述上硅层与所制造的器件转移到柔性衬底; 以及在所述柔性基板上堆叠钝化层，其中当所述钝化层被堆叠时，所述器件位于整个器件的中性机械平面的位置。

公开(公告)号：US20120295376A1

公开(公告)日：2012-11-22

申请号：US13473300

申请日：2012-05-16

Applicant: Keon Jae LEE ,  So Young PARK ,  Seung Hyun LEE ,  Kwi Il PARK ,  Min KOO

Inventor： Keon Jae LEE ,  So Young PARK ,  Seung Hyun LEE ,  Kwi Il PARK ,  Min KOO

IPC: H01L33/30 ,  H01L33/08

CPC classification number: H01L25/0753 ,  A61N5/0622 ,  A61N2005/0652 ,  A61N2005/0662 ,  H01L24/19 ,  H01L33/62 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Disclosed are a method for fabricating a GaN LED array device for optogenetics and a GaN LED array device fabricated thereby.

Abstract translation: 公开了一种用于制造用于光遗传学的GaN LED阵列器件和由其制造的GaN LED阵列器件的方法。

公开(公告)号：US08217381B2

公开(公告)日：2012-07-10

申请号：US11851182

申请日：2007-09-06

Applicant: John A. Rogers ,  Matthew Meitl ,  Yugang Sun ,  Heung Cho Ko ,  Andrew Carlson ,  Won Mook Choi ,  Mark Stoykovich ,  Hanqing Jiang ,  Yonggang Huang ,  Ralph G. Nuzzo ,  Keon Jae Lee ,  Zhengtao Zhu ,  Etienne Menard ,  Dahl-Young Khang ,  Seong Jun Kang ,  Jong Hyun Ahn ,  Hoon-sik Kim

Inventor： John A. Rogers ,  Matthew Meitl ,  Yugang Sun ,  Heung Cho Ko ,  Andrew Carlson ,  Won Mook Choi ,  Mark Stoykovich ,  Hanqing Jiang ,  Yonggang Huang ,  Ralph G. Nuzzo ,  Keon Jae Lee ,  Zhengtao Zhu ,  Etienne Menard ,  Dahl-Young Khang ,  Seong Jun Kang ,  Jong Hyun Ahn ,  Hoon-sik Kim

IPC: H01L29/72

CPC classification number: H01L29/72 ,  H01L21/02422 ,  H01L21/02628 ,  H01L21/4846 ,  H01L21/8258 ,  H01L23/5387 ,  H01L27/12 ,  H01L29/0657 ,  H01L2924/12041 ,  H01L2924/13091 ,  H05K1/0283 ,  H05K3/20 ,  H05K3/22 ,  H05K2201/0133 ,  H05K2201/09045 ,  H05K2203/0271 ,  H01L2924/00

Abstract: In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Abstract translation: 一方面，本发明提供了拉伸，压缩，弯曲或其它变形时能够提供良好性能的可拉伸和可选择的可印刷的部件，例如半导体和电子电路，以及制造或调谐这种可拉伸部件的相关方法。 对于一些应用而言，优选的可拉伸半导体和电子电路除了是可拉伸的之外是柔性的，因此能够沿着一个或多个轴显着地伸长，弯曲，弯曲或其它变形。 此外，本发明的可拉伸半导体和电子电路适用于宽范围的器件配置，以提供完全灵活的电子和光电器件。

公开(公告)号：US20100289124A1

公开(公告)日：2010-11-18

申请号：US12844492

申请日：2010-07-27

Applicant: Ralph G. NUZZO ,  John A. ROGERS ,  Etienne MENARD ,  Keon Jae LEE ,  Dahl-Young KHANG ,  Yugang SUN ,  Matthew MEITL ,  Zhengtao ZHU ,  Heung Cho KO ,  Shawn MACK

Inventor： Ralph G. NUZZO ,  John A. ROGERS ,  Etienne MENARD ,  Keon Jae LEE ,  Dahl-Young KHANG ,  Yugang SUN ,  Matthew MEITL ,  Zhengtao ZHU ,  Heung Cho KO ,  Shawn MACK

IPC: H01L23/544 ,  H01L21/02

CPC classification number: H01L29/72 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02628 ,  H01L21/30 ,  H01L21/3083 ,  H01L21/31612 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/66265 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/18 ,  H01L31/1804 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/13091 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

Abstract: The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Abstract translation: 本发明提供了用于制造，传输和组装具有选定的物理尺寸，形状，组成和空间取向的高质量可印刷半导体元件的高产率路径。 本发明的组合物和方法提供了高精度的记录转印和将微尺寸和/或纳米半导体结构的阵列集成到包括大面积衬底和/或柔性衬底的衬底上。 此外，本发明提供了从诸如散装硅晶片的低成本散装材料制造可印刷的半导体元件的方法，以及能够实现通用和商业上有吸引力的基于印刷的制造平台的智能材料处理策略，以制造广泛的功能性 半导体器件。