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公开(公告)号:US20180047558A1
公开(公告)日:2018-02-15
申请号:US15621335
申请日:2017-06-13
发明人: Vladimir Odnoblyudov , Cem Basceri , Shari Farrens
IPC分类号: H01L21/02 , H01L21/8252 , H01L23/535 , H01L29/20 , C30B33/08 , C30B29/40 , C30B29/68 , C23C16/24 , C23C16/34 , H01L21/74 , C30B29/06
CPC分类号: H01L21/0242 , C23C16/24 , C23C16/303 , C23C16/345 , C30B25/18 , C30B29/06 , C30B29/406 , C30B29/68 , C30B33/06 , C30B33/08 , H01L21/02428 , H01L21/0245 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02532 , H01L21/0254 , H01L21/743 , H01L21/76254 , H01L21/8252 , H01L23/535 , H01L29/2003 , H01L29/7783 , H01L29/802
摘要: A substrate includes a support structure comprising: a polycrystalline ceramic core; a first adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the first adhesion layer; a second adhesion layer coupled to the conductive layer; and a barrier layer coupled to the second adhesion layer. The substrate also includes a silicon oxide layer coupled to the support structure, a substantially single crystalline silicon layer coupled to the silicon oxide layer, and an epitaxial layer coupled to the substantially single crystalline silicon layer.
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公开(公告)号:US09859458B2
公开(公告)日:2018-01-02
申请号:US15186184
申请日:2016-06-17
申请人: QMAT, Inc.
发明人: Francois J. Henley , Sien Kang , Mingyu Zhong , Minghang Li
IPC分类号: H01L21/00 , H01L33/00 , C30B33/04 , H01L21/265 , H01L21/762 , H01L21/3105 , C30B25/02 , H01L21/04 , H01L29/16 , C30B29/40 , C30B25/18
CPC分类号: H01L33/0079 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , C30B33/04 , H01L21/0445 , H01L21/265 , H01L21/31058 , H01L21/76254 , H01L29/1608 , H01L33/007 , Y10S117/915
摘要: Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain embodiments employ bond-and-release system(s) where release occurs along a cleave plane formed by implantation of particles into the donor. Some embodiments may rely upon release by converting components from solid to liquid under carefully controlled thermal conditions (e.g., solder-based materials and/or thermal decomposition of Indium-containing materials). Some embodiments utilize laser-induced film release processes using epitaxially grown or implanted regions as an optically absorptive region. A single bond-and-release sequence may involve processing an exposed N-face of GaN material. Multiple bond-and-release sequences (involving processing an exposed Ga-face of GaN material) may be employed in series, for example utilizing a temporary handle substrate as an intermediary. Particular embodiments form template blanks of high quality GaN suitable for manufacturing High Brightness-Light Emitting Diode (HB-LED) devices.
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公开(公告)号:US09856562B2
公开(公告)日:2018-01-02
申请号:US15508683
申请日:2015-07-08
发明人: Hajime Fujikura
IPC分类号: H01L21/20 , C23C16/455 , C23C16/448 , C23C16/46 , C30B25/08 , C30B25/10 , C30B25/14 , C30B29/40 , C30B25/18
CPC分类号: C23C16/455 , C23C16/448 , C23C16/4488 , C23C16/46 , C30B25/08 , C30B25/10 , C30B25/14 , C30B25/18 , C30B29/38 , C30B29/406 , H01L21/0254 , H01L21/0262
摘要: There is provided a semiconductor manufacturing device that supplies a source gas to a substrate installed in a reaction furnace and performs film formation processing to the substrate, including: a storage vessel which is disposed in the reaction furnace and which stores a metal raw material as a base of the source gas; an auxiliary vessel which is disposed at an upper side of the storage vessel in the reaction furnace and which is a bottomed vessel having an inlet port for the metal raw material; a connection pipe through which an outlet port for the metal raw material formed on the auxiliary vessel and an inside of the storage vessel are communicated with each other; a sealing plug for sealing the outlet port so as to be opened and closed freely; and heater units that heat an inside of the reaction furnace to a predetermined temperature so as to melt the metal raw material in the auxiliary vessel and the metal raw material in the storage vessel, and to a predetermined temperature required for film formation processing performed to the substrate.
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14.
公开(公告)号:US09842898B2
公开(公告)日:2017-12-12
申请号:US14045334
申请日:2013-10-03
CPC分类号: H01L29/1608 , C30B25/10 , C30B25/16 , C30B25/18 , C30B29/36 , H01L21/02529 , H01L21/0262
摘要: A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.
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公开(公告)号:US20170338112A1
公开(公告)日:2017-11-23
申请号:US15675230
申请日:2017-08-11
发明人: Kenji ISO , Yuuki ENATSU , Hiromitsu KIMURA
CPC分类号: H01L21/02389 , C30B25/04 , C30B25/18 , C30B29/406 , H01L21/0254 , H01L21/0257 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L21/02647
摘要: Provides is a C-plane GaN substrate which, although formed from a GaN crystal grown so that surface pits are generated, is free from any inversion domain, and moreover, has a low spiral dislocation density in a gallium polar surface. Provides is a C-plane GaN substrate wherein: the substrate comprises a plurality of facet growth areas each having a closed ring outline-shape on a gallium polar surface; the spiral dislocation density is less than 1×106 cm−2 anywhere on the gallium polar surface; and the substrate is free from any inversion domain. The C-plane GaN substrate may comprise a high dislocation density part having a dislocation density of more than 1×107 cm−2 and a low dislocation density part having a dislocation density of less than 1×106 cm−2 on the gallium polar surface.
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公开(公告)号:US09793435B2
公开(公告)日:2017-10-17
申请号:US14953858
申请日:2015-11-30
发明人: Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号: H01L33/16 , H01L33/00 , B82Y20/00 , C30B23/02 , C30B25/18 , C30B29/40 , H01S5/343 , H01L33/02 , H01L21/02 , H01S5/042 , H01S5/22 , H01S5/32
CPC分类号: H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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公开(公告)号:US09778197B2
公开(公告)日:2017-10-03
申请号:US14450633
申请日:2014-08-04
发明人: Tiziana C. Bond , Ali Altun , Hyung Gyu Park
IPC分类号: C23C16/26 , C23C16/06 , C23C16/455 , G01N21/03 , G01N21/65 , C30B25/18 , C30B29/60 , C23C16/04 , C23C16/40 , C30B29/16
CPC分类号: G01N21/658 , C23C16/045 , C23C16/405 , C23C16/45555 , C30B25/18 , C30B29/16 , C30B29/60 , C30B29/602
摘要: A sensor with a substrate includes nanowires extending vertically from the substrate, a hafnia coating on the nanowires that provides hafnia coated nanowires, and a noble metal coating on the hafnia coated nanowires. The top of the hafnia and noble metal coated nanowires bent onto one another to create a canopy forest structure. There are numerous randomly arranged holes that let through scattered light. The many points of contact, hot spots, amplify signals. The methods include the steps of providing a Raman spectroscopy substrate, introducing nano crystals to the Raman spectroscopy substrate, growing a forest of nanowires from the nano crystals on the Raman spectroscopy substrate, coating the nanowires with hafnia providing hafnia coated nanowires, and coating the hafnia coated nanowires with a noble metal or other metal.
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18.
公开(公告)号:US09768352B2
公开(公告)日:2017-09-19
申请号:US15359813
申请日:2016-11-23
申请人: NGK INSULATORS, LTD.
IPC分类号: H01L33/18 , H01L33/00 , H01L33/06 , H01L33/32 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B28/04 , C30B29/40 , C30B29/60 , H01L33/16 , C30B9/00 , C30B25/20
CPC分类号: H01L33/18 , C30B9/00 , C30B9/12 , C30B19/02 , C30B19/12 , C30B25/18 , C30B25/20 , C30B28/04 , C30B29/406 , C30B29/605 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/16 , H01L33/32
摘要: Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate. The crystal orientations of individual GaN-based single crystal grains as determined from inverse pole figure mapping by EBSD analysis on the substrate surface are distributed with tilt angles from the specific crystal orientation, the average tilt angle being 1 to 10°. There is also provided a light emitting device including the self-supporting substrate and a light emitting functional layer, which has at least one layer composed of semiconductor single crystal grains, the at least one layer having a single crystal structure in the direction approximately normal to the substrate. The present invention makes it possible to provide a self-supporting polycrystalline GaN substrate having a reduced defect density at the substrate surface, and to provide a light emitting device having a high luminous efficiency.
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公开(公告)号:US09752252B1
公开(公告)日:2017-09-05
申请号:US15272153
申请日:2016-09-21
CPC分类号: C30B25/04 , C30B25/18 , C30B25/186 , C30B29/406 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/02647 , H01L27/1222 , H01L29/045 , H01L29/06 , H01L29/0657 , H01L29/16 , H01L29/2003
摘要: A method of epitaxially growing nitrogen-based compound semiconductor thin films on a semiconductor substrate, which is periodically patterned with grooves. The method can provide an epitaxial growth of a first crystalline phase epitaxial film on the substrate, and block the growth of an initial crystalline phase with barrier materials prepared at the sides of the grooves. Semiconductor devices employing the epitaxial films are also disclosed.
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公开(公告)号:US20170191186A1
公开(公告)日:2017-07-06
申请号:US15398319
申请日:2017-01-04
发明人: Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Masatomo SHIBATA , Takehiro YOSHIDA
CPC分类号: C30B25/186 , C30B19/02 , C30B19/12 , C30B25/18 , C30B29/406 , H01L21/02002 , H01L21/02389 , H01L21/02428 , H01L21/0254 , H01L21/0262 , H01L21/02625
摘要: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.
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