中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

207 records (took 0.044 seconds)

    GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION
    23.
    发明申请
    GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION 审中-公开
    含有配位区域的激光装置的玻璃和氮化物

    公开(公告)号：US20170077677A1

    公开(公告)日：2017-03-16

    申请号：US15356302

    申请日：2016-11-18

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

    IPC: H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

    CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

    Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

    Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域的含镓和氮的衬底构件，形成覆盖表面区域的图案化电介质材料，以露出图案化电介质的凹陷区域附近的表面区域的一部分 材料并且保持图案化电介质材料的上部覆盖在表面区域的被覆部分上，并且执行覆盖在表面区域的暴露部分上的横向外延生长以填充凹陷区域并且形成横向外延生长的厚度 覆盖图案化电介质材料的上部。 该方法还包括形成n型含镓和氮的材料，形成有源区，并形成p型含镓和氮的材料。 该方法还包括在p型含镓和氮的材料中形成波导结构。

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    29.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权
    用于制造具有改进的衬底材料使用的玻璃和氮的轴承激光器件的方法

    公开(公告)号：US20150229100A1

    公开(公告)日：2015-08-13

    申请号：US14176403

    申请日：2014-02-10

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02

    CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

Patent Agency Ranking