Manufacturing method of flexible semiconductor device
    40.
    发明授权
    Manufacturing method of flexible semiconductor device 有权
    柔性半导体器件的制造方法

    公开(公告)号:US08367488B2

    公开(公告)日:2013-02-05

    申请号:US13054049

    申请日:2010-02-05

    Abstract: A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.

    Abstract translation: 一种方法包括制备通过顺序堆叠第一金属层10,无机绝缘层20,半导体层30和第二金属层40而形成的多层膜80的步骤; 通过蚀刻第二金属层40形成由第二金属层40构成的源电极42s和漏电极42d; 将树脂层50压接到设置有源电极42s和漏电极42d的多层膜80的表面,以将树脂层50中的源电极42s和漏电极42d嵌入; 以及通过蚀刻第一金属层10形成由第一金属层10构成的栅极电极10g。无机绝缘层20g用作栅极绝缘膜。 半导体层30用作沟道。

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