Porous silicon carbide sinter and its production
    31.
    发明授权
    Porous silicon carbide sinter and its production 失效
    多孔碳化硅烧结及其生产

    公开(公告)号:US4777152A

    公开(公告)日:1988-10-11

    申请号:US165400

    申请日:1988-02-29

    Inventor: Kiyotaka Tsukada

    CPC classification number: B01D39/2075 B01J27/224 C04B35/565 C04B38/00

    Abstract: A porous silicon carbide sinter and its production process, the sinter consisting mainly of silicon carbide and having a three-dimensional network structure composed mainly of silicon carbide plate crystals having an average aspect ratio of 3 to 50 and an average length along the direction of the major axis of 0.5 to 1,000 .mu.m, wherein the open pores in the network structure have an average sectional area of 0.01 to 250,000 .mu.m.sup.2.

    Abstract translation: 一种多孔碳化硅烧结体及其制造方法,所述烧结体主要由碳化硅构成,并且具有主要由平均长宽比为3〜50的碳化硅板状晶体构成的三维网状结构,沿着 长轴为0.5〜1000μm,网状结构体的开放孔的平均截面积为0.01〜25万亩。

    Thin-film embedded capacitance, method for manufacturing thereof, and a printed wiring board
    39.
    发明授权
    Thin-film embedded capacitance, method for manufacturing thereof, and a printed wiring board 有权
    薄膜嵌入式电容,其制造方法以及印刷电路板

    公开(公告)号:US07310238B2

    公开(公告)日:2007-12-18

    申请号:US11498070

    申请日:2006-08-03

    Inventor: Kiyotaka Tsukada

    Abstract: The present invention provides a thin-film embedded capacitance having a substantial electrostatic capacity per unit area, and a method for manufacturing thereof.A thin film embedded capacitance comprising: a metallic thin-film for wiring made of a metallic material in a non-yield state; the first electrode formed on the film for wiring; a dielectric material layer formed on the first electrode and the film for wiring, at a temperature not lower than ordinary room temperature to lower than a yield temperature of the film for wiring, having a coefficient of thermal expansion lower than that the film for wiring; and the second electrode formed on the dielectric material layer, and a method for manufacturing thereof.

    Abstract translation: 本发明提供了具有每单位面积的显着静电容量的薄膜嵌入式电容及其制造方法。 一种薄膜嵌入式电容器,包括:用于非金属材料制成的布线的金属薄膜; 形成在用于布线的膜上的第一电极; 在不低于普通室温至低于布线用膜的屈服温度的温度下形成的第一电极和布线用电介质材料层,其热膨胀系数低于布线用膜; 和形成在电介质材料层上的第二电极及其制造方法。

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