公开(公告)号：US20160167193A1

公开(公告)日：2016-06-16

申请号：US14904832

申请日：2014-06-18

申请人： NAGOYA INSTITUTE OF TECHNOLOGY ,  SINTOKOGIO, LTD.

发明人： Osama ERYU ,  Eiji YAMAGUCHI

IPC分类号： B24B37/24 ,  B24D18/00

CPC分类号： B24B37/24 ,  B22F3/11 ,  B24D18/0009 ,  C22C47/14 ,  H01L21/02024

摘要： A metallic abrasive pad for use in a smoothing operation applied to a worked surface of a workpiece by a catalyst-supported chemical machining method, the metallic abrasive pad including a compression-formed compact of one or more metal fibers made of a transition-metal catalyst, wherein a contact spot of the one or more metal fibers intersecting each other is sintered, the one or more metal fibers are fixed to each other, and the metallic abrasive pad has a prescribed void ratio.

摘要翻译： 一种用于通过催化剂负载的化学机械加工方法对工件的加工面进行的平滑化处理的金属研磨垫，所述金属研磨垫包括一个或多个由过渡金属催化剂制成的金属纤维的压缩成形体 其中，所述一个或多个彼此相交的金属纤维的接触点被烧结，所述一个或多个金属纤维彼此固定，并且所述金属研磨垫具有规定的空隙率。

公开(公告)号：US09337013B2

公开(公告)日：2016-05-10

申请号：US14122356

申请日：2012-05-14

申请人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

发明人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  H01L21/02 ,  H01L21/322 ,  H01L29/30 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L29/34

CPC分类号： H01L21/02024 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/3221 ,  H01L29/30 ,  H01L29/34

摘要： Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

摘要翻译： 提供了通过Czochralski（CZ）方法生长的无缺陷硅单晶制造硅晶片的方法。 所述方法包括：制备通过将无缺陷的硅单晶切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种以高产率制造硅晶片的方法，将光点缺陷（LPD）降低到最小的硅晶片，故障发生率低的硅晶片 在检查步骤和出货阶段。

公开(公告)号：US09333618B2

公开(公告)日：2016-05-10

申请号：US14112084

申请日：2012-04-25

申请人： Takashi Aratani

发明人： Takashi Aratani

IPC分类号： B24B49/16 ,  B24B37/04 ,  B24B37/005 ,  B24B37/10 ,  B24B49/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B37/105 ,  B24B37/30 ,  B24B49/10 ,  B24B49/12 ,  B24B49/16 ,  H01L21/02024

摘要： A method for adjusting a height position of a polishing head, comprising moving the polishing head to a height position at which the polishing head comes in noncontact with the polishing pad with the polishing head holding no workpiece, and then rotating at least one of the polishing head and the turn table; measuring the load torque current of the at least one of the polishing head and the turn table rotated with the torque-measuring mechanism while the height-adjusting mechanism moves the polishing head toward the polishing pad until the polishing head contacts the polishing pad, and recording the height position of the polishing head as a reference position when a variation in the measured load torque current exceeds a threshold; and adjusting the height position of the polishing head to the predetermined position on the basis of a distance from the reference position.

摘要翻译： 一种用于调整抛光头的高度位置的方法，包括将抛光头移动到抛光头与抛光垫不接触的高度位置，抛光头不保持工件，然后旋转至少一个抛光 头和转台; 测量所述抛光头和所述转台中的至少一个的负载转矩电流，所述至少一个所述抛光头和所述转台在所述高度调节机构将所述抛光头朝向所述抛光垫移动时直到所述抛光头接触所述抛光垫，并且记录 当测量的负载转矩电流的变化超过阈值时，抛光头的高度位置作为基准位置; 并且基于距离基准位置的距离将抛光头的高度位置调整到预定位置。

公开(公告)号：US09293339B1

公开(公告)日：2016-03-22

申请号：US14863548

申请日：2015-09-24

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Yi Guo ,  David Mosley

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  H01L21/3105

CPC分类号： H01L21/31055 ,  C09G1/02 ,  H01L21/02024

摘要： A process for chemical mechanical polishing of a substrate having an exposed silicon dioxide feature is provided comprising: providing a chemical mechanical polishing composition, containing, as initial components: water, a colloidal silica abrasive and a zirconyl compound; wherein a pH of the chemical mechanical polishing composition is ≦6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate; wherein the substrate is polished.

摘要翻译： 提供了具有暴露的二氧化硅特征的基底的化学机械抛光的方法，其包括：提供化学机械抛光组合物，其包含作为初始成分的水，胶态二氧化硅磨料和锆基化合物; 其中所述化学机械抛光组合物的pH为6; 提供具有抛光表面的化学机械抛光垫; 将化学机械抛光组合物分配到化学机械抛光垫的抛光表面附近靠近化学机械抛光垫和基底之间的界面; 并且在化学机械抛光垫和衬底之间的界面处产生动态接触; 其中衬底被抛光。

公开(公告)号：US09287121B2

公开(公告)日：2016-03-15

申请号：US14240662

申请日：2012-09-04

申请人： Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

发明人： Kenji Momose ,  Michiya Odawara ,  Daisuke Muto ,  Yoshiaki Kageshima

IPC分类号： H01L21/02 ,  C30B25/20 ,  C30B29/36 ,  C30B25/18 ,  H01L29/32 ,  H01L29/16 ,  H01L29/04

CPC分类号： H01L21/02617 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02024 ,  H01L21/02046 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/32

摘要： A method of manufacturing a SiC epitaxial wafer wherein a SiC epitaxial layer is provided on a SiC single crystal substrate having an off angle. The method includes determining a ratio of basal plane dislocations (BPD) which cause stacking faults in a SiC epitaxial film of a prescribed thickness, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, determining an upper limit of surface density of basal plane dislocations, preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

摘要翻译： 一种制造SiC外延晶片的方法，其中SiC外延层设置在具有偏角的SiC单晶衬底上。 该方法包括确定在SiC单晶衬底的生长表面上存在的SiC外延膜中引起堆垛层错的规定厚度的基底面位错比（BPD）与基面平面位错之比，确定上限 基面平面位错的表面密度，制备表面密度等于或小于上述上限的SiC单晶衬底，在与SiC外延层的生长条件相同的条件下，在SiC单晶衬底上形成SiC外延膜 电影用于确定比例的步骤。

公开(公告)号：US09266216B2

公开(公告)日：2016-02-23

申请号：US14373672

申请日：2013-01-28

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Hisashi Masumura

IPC分类号： B24B37/10 ,  B24B37/32 ,  H01L21/304 ,  B24B37/30 ,  H01L21/02

CPC分类号： B24B37/10 ,  B24B37/30 ,  B24B37/32 ,  H01L21/02024 ,  H01L21/304 ,  H01L2221/683

摘要： The present invention provides a polishing head including: an annular rigid ring; an elastic film bonded to the rigid ring; and an upward and downward movable mid-plate, the mid-plate defining a first sealed space together with the rigid ring and the elastic film; an incompressible fluid enclosed in a sealed space; and a mid-plate positioning device for adjusting vertical position of the mid-plate, to hold a back surface of a workpiece on a lower surface of the elastic film and polish a front surface by bringing the front surface into contact with a polishing pad attached to a turn table, wherein the mid-plate can adjust a shape of the lower surface of the elastic film by adjusting the vertical position of the mid-plate. The polishing head polishes a workpiece without generating surface defects on the workpiece surface and easy detachment of the workpiece from a polishing pad after polishing.

摘要翻译： 本发明提供了一种抛光头，包括：环形刚性环; 粘结到刚性环的弹性膜; 以及向上和向下移动的中间板，中间板与刚性环和弹性膜一起限定第一密封空间; 封闭在密封空间内的不可压缩流体; 以及用于调节中间板的垂直位置的中间板定位装置，用于将工件的后表面保持在弹性膜的下表面上，并通过使前表面与附接的抛光垫接触来抛光前表面 转台，其中中板可以通过调节中间板的垂直位置来调节弹性膜的下表面的形状。 抛光头对工件进行抛光，而不会在工件表面产生表面缺陷，并且抛光后容易从抛光垫上脱离工件。

公开(公告)号：US20160001416A1

公开(公告)日：2016-01-07

申请号：US14769377

申请日：2014-02-14

申请人： FUJIMI INCORPORATED

发明人： Kohsuke TSUCHIYA ,  Hisanori TANSHO

IPC分类号： B24B37/04 ,  H01L21/02 ,  H01L21/306 ,  C09G1/02 ,  C09K3/14

CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  C08L29/04 ,  C08K3/36 ,  C08L33/24 ,  C08L39/06 ,  C08K3/28

摘要： This invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The water-soluble polymer comprises a polymer A having an adsorption ratio of lower than 5% and a polymer B having an adsorption ratio of 5% or higher, but lower than 95% based on a prescribed adsorption ratio measurement. Herein, the polymer B is selected from polymers excluding hydroxyethyl celluloses.

摘要翻译： 本发明提供一种抛光组合物，其包括研磨剂，水溶性聚合物和水。 水溶性聚合物包含吸附比低于5％的聚合物A和基于规定的吸附比测定的吸附率为5％以上但低于95％的聚合物B. 这里，聚合物B选自不含羟乙基纤维素的聚合物。

公开(公告)号：US20150303050A1

公开(公告)日：2015-10-22

申请号：US14648730

申请日：2013-11-27

申请人： SHOWA DENKO K.K.

发明人： Yuzo SASAKI ,  Kenji SUZUKI

IPC分类号： H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02019 ,  H01L21/02013 ,  H01L21/02024 ,  H01L29/1608

摘要： A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film (10) to cover a surface (1a) of the SiC substrate (1); and a planarization process of polishing the SiC substrate (1) from an oxide film side (10) in accordance with a CMP method so as to remove the oxide film (10), and of polishing the surface (1a) of the SiC substrate (1) to planarize the surface (1a).

摘要翻译： 本发明的SiC衬底的制造方法至少包括形成氧化膜（10）以覆盖SiC衬底（1）的表面（1a）的氧化膜形成工艺; 以及根据CMP方法从氧化物膜侧（10）对SiC衬底（1）进行抛光以去除氧化膜（10）并抛光SiC衬底的表面（1a）的平坦化工艺（ 1）使表面（1a）平坦化。

公开(公告)号：US20150299517A1

公开(公告)日：2015-10-22

申请号：US14440688

申请日：2013-11-19

申请人： NITTA HAAS INCORPORATED

发明人： Takayuki MATSUSHITA

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C23F1/30 ,  H01L21/02024

摘要： A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point: (where R1 to R6 each independently denote a hydrogen atom or an organic group, X denotes a single bond or a linking group, and R7 and R8 each independently denote a hydrogen atom or R9—CO— (where R9 denotes an alkyl group)).

摘要翻译： 本发明的研磨用组合物含有：侧链具有1,2-二醇结构的聚乙烯醇树脂，聚乙烯醇树脂为下述式（1）表示的单体与乙烯基酯单体的共聚物， 有机酸; 表面被化学改性以在pH为2.0以上的溶液中的表面具有负ζ电位且不具有等电点的磨粒：（其中R 1至R 6各自独立地表示氢原子或有机物 基团，X表示单键或连接基团，并且R 7和R 8各自独立地表示氢原子或R 9 -CO-（其中R 9表示烷基））。

公开(公告)号：US09165779B2

公开(公告)日：2015-10-20

申请号：US14644980

申请日：2015-03-11

申请人： Dow Corning Corporation

发明人： Mark Loboda ,  Christopher Parfeniuk

IPC分类号： H01L29/15 ,  H01L21/306 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L21/30625 ,  B24B1/00 ,  B24B7/228 ,  B24B9/065 ,  B24B37/28 ,  C30B29/36 ,  C30B33/00 ,  H01L21/02008 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02035 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02658 ,  H01L29/1608 ,  H01L29/30

摘要： Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.