公开(公告)号：US20140138696A1

公开(公告)日：2014-05-22

申请号：US13682786

申请日：2012-11-21

申请人： GUARDIAN INDUSTRIES CORP.

发明人： Vijayen S. VEERASAMY ,  Martin D. BRACAMONTE

IPC分类号： H01L21/02 ,  H01L29/04

CPC分类号： H01L21/02595 ,  C23C16/0281 ,  C23C16/24 ,  C23C16/44 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02672 ,  H01L29/04 ,  H01L31/03682 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate.

摘要翻译： 制造多晶硅膜的方法包括：沉积包括镍的催化剂层并将镍纳米颗粒沉积在基底上; 将催化剂层和纳米颗粒暴露于至少硅烷气体; 以及在至少部分暴露于硅烷气体的过程中，在衬底上生长硅基膜时，对涂覆有催化剂层和纳米颗粒的基材进行热处理。

公开(公告)号：US08691671B2

公开(公告)日：2014-04-08

申请号：US13427590

申请日：2012-03-22

申请人： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. Denbaars ,  Shuji Nakamura ,  James S. Speck

发明人： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. Denbaars ,  Shuji Nakamura ,  James S. Speck

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.

摘要翻译： 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向朝向α轴方向具有0.15°以上的误差角和朝向α轴方向的小于30°的倾斜角度的朝向α轴方向的误差角度而改善。

公开(公告)号：US20140077223A1

公开(公告)日：2014-03-20

申请号：US14085523

申请日：2013-11-20

申请人： Panasonic Corporation

发明人： Songbaek CHOE ,  Toshiya YOKOGAWA ,  Akira INOUE ,  Atsushi YAMADA

IPC分类号： H01L33/32 ,  H01L21/20

CPC分类号： H01L33/18 ,  C30B25/04 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L21/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/16225

摘要： A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.

公开(公告)号：US08592862B2

公开(公告)日：2013-11-26

申请号：US13728956

申请日：2012-12-27

申请人： International Rectifier Corporation

发明人： T. Warren Weeks, Jr. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

IPC分类号： H01L29/66

CPC分类号： H01L29/155 ,  C30B23/02 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/225 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀率差异导致的氮化镓材料层中的应力变得较低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。

公开(公告)号：US08591651B2

公开(公告)日：2013-11-26

申请号：US13524274

申请日：2012-06-15

申请人： Jie Zhang

发明人： Jie Zhang

IPC分类号： C30B21/02

CPC分类号： C30B25/18 ,  C30B29/36

摘要： A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber, introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; and epitaxially growing a layer of SiC on a surface of the SiC substrate. The SiC substrate is heated to the first temperature at a rate of at least 30° C./minute. The surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to a basal plane of the substrate material.

摘要翻译： 描述了在单晶SiC衬底上外延生长SiC层的方法。 该方法包括将单晶SiC衬底加热到​​腔室中至少1400℃的第一温度，将载气，含硅气体和含碳气体引入腔室中; 并且在SiC衬底的表面上外延生长SiC层。 将SiC衬底以至少30℃/分钟的速率加热至第一温度。 SiC衬底的表面相对于衬底材料的基面以1°至3°的角度倾斜。

公开(公告)号：US08580035B2

公开(公告)日：2013-11-12

申请号：US13706966

申请日：2012-12-06

申请人： Crystal IS, Inc.

发明人： Robert Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/00

CPC分类号： C30B33/02 ,  B28D5/00 ,  C23C16/34 ,  C30B23/00 ,  C30B23/02 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0201 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/30625 ,  Y10T428/21

摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.

摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度（例如，位错密度低于104cm -2）和包含密度低于104cm -3和/或低于104cm -3的MV密度的大体积AlN晶体 。

公开(公告)号：US08574528B2

公开(公告)日：2013-11-05

申请号：US12876729

申请日：2010-09-07

申请人： Tangali S. Sudarshan ,  Amitesh Srivastava

发明人： Tangali S. Sudarshan ,  Amitesh Srivastava

IPC分类号： C01B31/36 ,  C01B33/00 ,  C01B21/068 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  H01L29/06 ,  H01L31/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/302

CPC分类号： H01L29/1608 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/0262

摘要： A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.

摘要翻译： 通常提供在衬底上生长外延层的方法。 根据该方法，在碳源气体的存在下，将化学气相沉积室中的基板加热到生长温度，然后在生长温度下在基板上生长外延层，最后将基板冷却 化学气相沉积室在碳源气体存在下至少为生长温度的约80％。 由该方法形成的基板可以具有介于约0.25微米和约9.9微米之间的载体寿命。

公开(公告)号：US08546830B2

公开(公告)日：2013-10-01

申请号：US13444429

申请日：2012-04-11

申请人： Vladimir Semenovich Abramov ,  Naum Petrovich Soshchin ,  Valeriy Petrovich Sushkov ,  Nikolay Valentinovich Shcherbakov ,  Vladimir Vladimirovich Alenkov ,  Sergei Aleksandrovich Sakharov ,  Vladimir Aleksandrovich Gorbylev

发明人： Vladimir Semenovich Abramov ,  Naum Petrovich Soshchin ,  Valeriy Petrovich Sushkov ,  Nikolay Valentinovich Shcherbakov ,  Vladimir Vladimirovich Alenkov ,  Sergei Aleksandrovich Sakharov ,  Vladimir Aleksandrovich Gorbylev

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/50 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/34333

摘要： The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0

摘要翻译： 基于AlGaInN系统中的化合物和合金，生长产生白色发射和激光的发光二极管的非极性外延异质结构的方法包括由式Al x Ga 1描述的一个或多个异质结构层的气相沉积步骤 -xN（0

公开(公告)号：US20130217213A1

公开(公告)日：2013-08-22

申请号：US13881231

申请日：2011-11-15

申请人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

发明人： Takashi Aigo ,  Hiroshi Tsuge ,  Masakazu Katsuno ,  Tatsuo Fujimoto ,  Hirokatsu Yashiro

IPC分类号： H01L21/02

CPC分类号： H01L21/02378 ,  C30B25/02 ,  C30B25/18 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931

摘要： An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle.According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 μm is performed at a temperature of 1,550 to 1,650° C. by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed.

摘要翻译： 本发明的目的是提供一种外延碳化硅单晶衬底的制造方法，该外延碳化硅单晶衬底具有在具有小的剥离的碳化硅单晶衬底上具有减少表面缺陷等的高质量碳化硅单晶薄膜 -角度。 根据本发明，在具有在碳化硅单晶衬底上具有减小表面缺陷等的高质量碳化硅单晶薄膜的外延碳化硅单晶衬底的制造工艺中， 4°以下，通过使含有硅和氯的气体与氢气一起流动，使得硅原子浓度从0.0001变为0.0001〜，从而在1550〜1650℃的温度下进行0.1〜1μm的深度的预处理蚀刻 0.01％，基于氢气中的氢原子，然后形成外延层。

公开(公告)号：US20130200432A1

公开(公告)日：2013-08-08

申请号：US13809642

申请日：2011-07-07

申请人： Peter Stauß ,  Patrick Rode ,  Philipp Drechsel

发明人： Peter Stauß ,  Patrick Rode ,  Philipp Drechsel

IPC分类号： H01L21/36 ,  H01L29/267

CPC分类号： H01L29/267 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/382

摘要： A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.

摘要翻译： 半导体部件包括基于氮化物化合物半导体材料的半导体本体，以及配置有半导体主体的基板，以目标方式在基板上形成杂质。