公开(公告)号：US08114768B2

公开(公告)日：2012-02-14

申请号：US12344838

申请日：2008-12-29

Applicant: Baozhen Li ,  Paul S. McLaughlin ,  Timothy D. Sullivan

Inventor： Baozhen Li ,  Paul S. McLaughlin ,  Timothy D. Sullivan

IPC: H01L21/4763

CPC classification number: H01L21/76816 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A liner-to-liner direct contact is formed between an upper metallic liner of a conductive via and a lower metallic liner of a metal line below. The liner-to-liner contact impedes abrupt electromigration failures and enhances electromigration resistance of the metal interconnect structure. The at least one dielectric material portion may include a plurality of dielectric material portions arranged to insure direct contact of between the upper metallic liner and the lower metallic liner. Alternatively, the at least one dielectric material portion may comprise a single dielectric portion of which the area has a sufficient lateral overlap with the area of the conductive via to insure that a liner-to-liner direct contact is formed within the range of allowed lithographic overlay variations.

Abstract translation: 在导电通孔的上金属衬套和下面的金属线的下金属衬垫之间形成衬管到衬垫直接接触。 衬套到衬垫接触件阻止突然的电迁移故障并增强金属互连结构的电迁移阻力。 所述至少一个电介质材料部分可以包括多个电介质材料部分，其布置成确保上金属衬垫和下金属衬垫之间的直接接触。 或者，所述至少一个介电材料部分可以包括单个电介质部分，其中该区域具有与导电通孔的面积的足够的横向重叠，以确保在允许的光刻的范围内形成衬管到衬垫的直接接触 重叠变化。

公开(公告)号：US20120025383A1

公开(公告)日：2012-02-02

申请号：US12845065

申请日：2010-07-28

Applicant: Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L23/485 ,  H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/76852 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed are embodiments of a structure having a metal layer with top surface and sidewall passivation and a method of forming the structure. In one embodiment, a metal layer is electroplated onto a portion of a seed layer at the bottom of a trench. Then, the sidewalls of the metal layer are exposed and, for passivation, a second metal layer is electroplated onto the top surface and sidewalls of the metal layer. In another embodiment, a trench is formed in a dielectric layer. A seed layer is formed over the dielectric layer, lining the trench. A metal layer is electroplated onto the portion of the seed layer within the trench and a second metal layer is electroplated onto the top surface of the metal layer. Thus, in this case, passivation of the top surface and sidewalls of the metal layer is provided by the second metal layer and the dielectric layer, respectively.

Abstract translation: 公开了具有具有顶表面和侧壁钝化的金属层的结构的实施例以及形成该结构的方法。 在一个实施例中，金属层电镀在沟槽底部的种子层的一部分上。 然后，暴露金属层的侧壁，为了钝化，将第二金属层电镀在金属层的顶表面和侧壁上。 在另一个实施例中，在电介质层中形成沟槽。 在电介质层上形成种子层，衬在沟槽上。 将金属层电镀在沟槽内的种子层的部分上，并且将第二金属层电镀到金属层的顶表面上。 因此，在这种情况下，金属层的顶表面和侧壁的钝化分别由第二金属层和电介质层提供。

公开(公告)号：US08084858B2

公开(公告)日：2011-12-27

申请号：US12424001

申请日：2009-04-15

Applicant: Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

Inventor： Timothy H. Daubenspeck ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Steven L. Wright ,  Edmund Sprogis

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/03 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05094 ,  H01L2224/05095 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/11334 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/05552

Abstract: In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

Abstract translation: 在一个实施例中，金属结构的子垫组件位于金属垫的正下方。 子焊盘组件包括邻接金属焊盘的上层金属线结构，位于上层金属线结构下方的下层金属线结构，以及一组在下层金属线结构之间提供电连接的金属通孔 在上层金属线结构下方。 在另一个实施例中，C4球的可靠性通过使用具有一组集成金属通孔的金属焊盘结构而被增强，所述集成金属通孔被分段和分配以便于在C4球内均匀的电流密度分布。 在金属焊盘的中心部分，多个金属通孔中的横截面面积的面密度高于在金属焊盘的平面部分的周边部分。

公开(公告)号：US08003536B2

公开(公告)日：2011-08-23

申请号：US12552641

申请日：2009-09-02

Applicant: Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

Inventor： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC: H01L21/44 ,  H01L21/4763

CPC classification number: H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

公开(公告)号：US20110193218A1

公开(公告)日：2011-08-11

申请号：US12700863

申请日：2010-02-05

Applicant: Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

Inventor： Charles L. Arvin ,  Raschid J. Bezama ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  David L. Questad ,  Wolfgang Sauter ,  Timothy D. Sullivan ,  Brian R. Sundlof

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L24/13 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/10126 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/119 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13101 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01024 ,  H01L2924/01026 ,  H01L2924/01032 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A solder interconnect structure is provided with non-wettable sidewalls and methods of manufacturing the same. The method includes forming a nickel or nickel alloy pillar on an underlying surface. The method further includes modifying the sidewall of the nickel or nickel alloy pillar to prevent solder wetting on the sidewall.

Abstract translation: 焊接互连结构设置有不可润湿的侧壁及其制造方法。 该方法包括在下面的表面上形成镍或镍合金支柱。 该方法还包括修改镍或镍合金柱的侧壁以防止在侧壁上的焊料润湿。

公开(公告)号：US20110006421A1

公开(公告)日：2011-01-13

申请号：US12885709

申请日：2010-09-20

Applicant: Timothy Harrison Daubenspeck ,  Timothy D. Sullivan

Inventor： Timothy Harrison Daubenspeck ,  Timothy D. Sullivan

IPC: H01L23/498

CPC classification number: H01L23/488 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45147 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Structure and methods of making the structures. The structures include a structure, comprising: an organic dielectric passivation layer extending over a substrate; an electrically conductive current spreading pad on a top surface of the organic dielectric passivation layer; an electrically conductive solder bump pad comprising one or more layers on a top surface of the current spreading pad; and an electrically conductive solder bump containing tin, the solder bump on a top surface of the solder bump pad, the current spreading pad comprising one or more layers, at least one of the one or more layers consisting of a material that will not form an intermetallic with tin or at least one of the one or more layers is a material that is a diffusion barrier to tin and adjacent to the solder bump pad.

Abstract translation: 制作结构的结构和方法。 所述结构包括结构，包括：在衬底上延伸的有机介电钝化层; 在所述有机介电钝化层的顶表面上的导电电流扩散焊盘; 导电焊料凸块焊盘，其在电流扩散焊盘的顶表面上包括一层或多层; 以及包含锡的导电焊料凸块，所述焊料凸块在所述焊料凸块焊盘的顶表面上，所述电流扩散焊盘包括一个或多个层，所述一个或多个层中的至少一个由不会形成 金属间化合物与锡或一层或多层中的至少一层是对锡的扩散阻挡层并且与焊料凸块相邻的材料。

公开(公告)号：US20100237503A1

公开(公告)日：2010-09-23

申请号：US12552641

申请日：2009-09-02

Applicant: Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

Inventor： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

Abstract: A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

Abstract translation: 在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。 垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。 在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

公开(公告)号：US20100230772A1

公开(公告)日：2010-09-16

申请号：US12547519

申请日：2009-08-26

Applicant: Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

Inventor： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/115 ,  H01L23/552 ,  H01L23/556 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

Abstract translation: 辐射传感器或检测器阵列集成在三维半导体IC内。 传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。 因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。

公开(公告)号：US20090206479A1

公开(公告)日：2009-08-20

申请号：US12032158

申请日：2008-02-15

Applicant: Timothy Harrison Daubenspeck ,  Timothy D. Sullivan

Inventor： Timothy Harrison Daubenspeck ,  Timothy D. Sullivan

IPC: H01L23/52 ,  H01L21/44

CPC classification number: H01L23/488 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45147 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Structure and methods of making the structures. The structures include a structure, comprising: an organic dielectric passivation layer extending over a substrate; an electrically conductive current spreading pad on a top surface of the organic dielectric passivation layer; an electrically conductive solder bump pad comprising one or more layers on a top surface of the current spreading pad; and an electrically conductive solder bump containing tin, the solder bump on a top surface of the solder bump pad, the current spreading pad comprising one or more layers, at least one of the one or more layers consisting of a material that will not form an intermetallic with tin or at least one of the one or more layers is a material that is a diffusion barrier to tin and adjacent to the solder bump pad.

Abstract translation: 制作结构的结构和方法。 所述结构包括结构，包括：在衬底上延伸的有机介电钝化层; 在所述有机介电钝化层的顶表面上的导电电流扩散焊盘; 导电焊料凸块焊盘，其在电流扩散焊盘的顶表面上包括一层或多层; 以及包含锡的导电焊料凸块，所述焊料凸块在所述焊料凸块焊盘的顶表面上，所述电流扩散焊盘包括一个或多个层，所述一个或多个层中的至少一个由不会形成 金属间化合物与锡或一层或多层中的至少一层是对锡的扩散阻挡层并且与焊料凸块相邻的材料。

公开(公告)号：US07512506B2

公开(公告)日：2009-03-31

申请号：US11755827

申请日：2007-05-31

Applicant: Oliver Aubel ,  Tom C. Lee ,  Deborah M. Massey ,  Travis S. Merrill ,  Stanley W. Polchlopek ,  Alvin W. Strong ,  Timothy D. Sullivan

Inventor： Oliver Aubel ,  Tom C. Lee ,  Deborah M. Massey ,  Travis S. Merrill ,  Stanley W. Polchlopek ,  Alvin W. Strong ,  Timothy D. Sullivan

IPC: G06F19/00 ,  G01R31/26

CPC classification number: G01R31/2858 ,  G01R31/2875 ,  G01R31/2879

Abstract: Methods, systems and program products are disclosed for performing a stress test of a line in an integrated circuit (IC) chip. One embodiment of the method includes: applying a constant current Is to the line; and stress testing the line while applying the constant current Is such that the constant current Is is not altered by a resistance change due to an onset of electromigration.

Abstract translation: 公开了用于对集成电路（IC）芯片中的线进行压力测试的方法，系统和程序产品。 该方法的一个实施例包括：对线路施加恒定电流Is; 并且在施加恒定电流Is的同时对线进行应力测试，使得恒定电流Is不会由于电迁移开始时的电阻变化而改变。