公开(公告)号：US20180155823A1

公开(公告)日：2018-06-07

申请号：US15575358

申请日：2016-04-19

Applicant: THE JAPAN STEEL WORKS, LTD.

Inventor： Tatsuya MATSUMOTO ,  Keisuke WASHIO

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/042 ,  C23C14/564 ,  C23C16/308 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/4558 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/509 ,  H01L21/02178 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68735 ,  H01L21/68742

Abstract: A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.

公开(公告)号：US09982362B2

公开(公告)日：2018-05-29

申请号：US14618519

申请日：2015-02-10

Applicant: Veeco Instruments Inc.

Inventor： Bojan Mitrovic ,  Alexander I. Gurary ,  William E. Quinn ,  Eric A. Armour

IPC: C23C16/455 ,  C30B25/14 ,  C23C16/458 ,  C30B25/16 ,  C30B25/08 ,  C30B25/12 ,  C23C16/52

CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

公开(公告)号：US20180144903A1

公开(公告)日：2018-05-24

申请号：US15860547

申请日：2018-01-02

Applicant: Lam Research Corporation

Inventor： Fayaz Shaikh

IPC: H01J37/00 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01J37/00 ,  C23C16/45565 ,  C23C16/45587 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32926 ,  H01J37/32935

Abstract: Methods and systems for depositing material layers with gap variation between film deposition operations. One method includes depositing a material layer over a substrate. The depositing is performed in a plasma chamber having a bottom electrode and a top electrode. The method includes providing a substrate over the bottom electrode in the plasma chamber. The method sets a first gap between the bottom and top electrodes and performs plasma deposition to deposit a first film of the material layer over the substrate while the first gap is set between the bottom and top electrodes. The method then sets a second gap between the bottom a top electrodes and performs plasma deposition to deposit a second film of the material layer over the substrate while the second gap is set between the bottom and top electrodes. The material layer is defined by the first and second films and the first gap is varied to the second gap to offset expected non-uniformities when depositing the first film followed by the second film.

公开(公告)号：US20180135178A1

公开(公告)日：2018-05-17

申请号：US15806681

申请日：2017-11-08

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA ,  Jun SATO

IPC: C23C16/455 ,  C23C16/24 ,  H01L21/02 ,  H01L21/687

CPC classification number: C23C16/45565 ,  C23C16/24 ,  C23C16/401 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. A source gas supply unit extending along a radial direction of the turntable is provided above the turntable with a first distance from the turntable such that the source gas supply unit covers an entire length of the substrate receiving region in the radial direction. An axial-side supplementary gas supply unit is provided in the vicinity of the source gas supply unit and above the turntable with a second distance from the turntable. The second distance is longer than the first distance. The axial-side supplementary gas supply unit covers a predetermined region of the substrate receiving region on the axial side in the radial direction of the turntable.

公开(公告)号：US20180130652A1

公开(公告)日：2018-05-10

申请号：US15861418

申请日：2018-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/02104 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

公开(公告)号：US20180119280A1

公开(公告)日：2018-05-03

申请号：US15797008

申请日：2017-10-30

Applicant: NuFlare Technology, Inc.

Inventor： Yoshiaki DAIGO ,  Kiyotaka MIYANO

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC classification number: C23C16/45565 ,  C23C16/18 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/005 ,  H01L33/06

Abstract: The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.

公开(公告)号：US09945031B2

公开(公告)日：2018-04-17

申请号：US14742408

申请日：2015-06-17

Applicant: ADVANCED MICRO-FABRICATION EQUIPMENT INC, CHINA

Inventor： Yong Jiang ,  Zhiyou Du

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45574

Abstract: A gas shower device, a device and a method for chemical vapor deposition. A gas shower device has a showerhead. The showerhead includes a center region and a periphery region surrounding the center region; the center region and periphery region of the showerhead have a plurality of second gas-outlets which are arranged in parallel; the second gas-outlets are used to output the second gas; a first gas-outlet arranged between two adjacent second gas-outlets, includes the first sub-gas-outlet located in the center region and the second sub-gas-outlet located in the periphery region; the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output the first gas and the second sub-gas-outlet is used to output the second gas; a first gas channel is connected to the first sub-gas-outlet; a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet. The film formation quality is improved by using the chemical vapor deposition device with the gas shower device.

公开(公告)号：US20180090300A1

公开(公告)日：2018-03-29

申请号：US15277774

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Lai ZHAO ,  Gaku FURUTA ,  Soo Young CHOI ,  Beom Soo PARK

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/4404 ,  C23C16/45565 ,  H01J37/32596 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: The present disclosure generally relates to a gas distribution plate for ensuring deposition uniformity. The gas distribution plate has multiple concave portions on the downstream side to ensure uniform deposition in corner regions of the processing chamber.

公开(公告)号：US20180080125A1

公开(公告)日：2018-03-22

申请号：US15822551

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Oscar LOPEZ ,  Ningli LIU

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/458 ,  C23C16/509

CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

公开(公告)号：US20180073142A9

公开(公告)日：2018-03-15

申请号：US14552273

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Thomas NOWAK ,  Juan Carlos ROCHA-ALVAREZ ,  Mark A. FODOR ,  Dale R. DU BOIS ,  Amit BANSAL ,  Mohamad AYOUB ,  Eller Y. JUCO ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/503 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32541

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.