公开(公告)号：US09786786B2

公开(公告)日：2017-10-10

申请号：US15345546

申请日：2016-11-08

申请人： Intel Corporation

发明人： Willy Rachmady ,  Ravi Pillarisetty ,  Van H. Le ,  Robert S. Chau

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/78 ,  B82Y10/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/267 ,  H01L29/165 ,  H01L29/10 ,  H01L29/15 ,  H01L21/306 ,  H01L21/762 ,  H01L29/06 ,  H01L29/12 ,  H01L29/51

CPC分类号： H01L29/7851 ,  B82Y10/00 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/122 ,  H01L29/151 ,  H01L29/165 ,  H01L29/267 ,  H01L29/513 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66787 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

摘要： Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), and a quantum well layer. A fin structure is formed in the quantum well structure, and an interfacial layer provided over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.

公开(公告)号：US09640616B2

公开(公告)日：2017-05-02

申请号：US15072145

申请日：2016-03-16

申请人： Quantum Semiconductor LLC

发明人： Carlos Jorge R. P. Augusto

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L21/00 ,  H01L29/15 ,  H01L29/68 ,  H01L29/737 ,  H01L31/101 ,  H01L29/04 ,  H01L29/161 ,  H01L27/12 ,  H01L29/78

CPC分类号： H01L29/155 ,  H01L27/1203 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/151 ,  H01L29/161 ,  H01L29/165 ,  H01L29/68 ,  H01L29/7371 ,  H01L29/78 ,  H01L29/7833 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1812 ,  Y02E10/50

摘要： A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

公开(公告)号：US20160369423A1

公开(公告)日：2016-12-22

申请号：US14900267

申请日：2014-06-23

申请人： NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)

发明人： Bjøm-Ove Fimland ,  Dheeraj Dasa ,  Helge Weman

IPC分类号： C30B25/10 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  C30B29/48 ,  H01L29/15 ,  C30B25/18 ,  C30B29/02 ,  C30B29/40 ,  H01L21/02 ,  H01L29/04

CPC分类号： C30B25/105 ,  C30B25/183 ,  C30B29/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02376 ,  H01L21/02455 ,  H01L21/02466 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/151 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/20 ,  H01L29/22

摘要： A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

摘要翻译： 一种包含石墨基底上的膜的物质组合物，所述膜已经在所述基底上外延生长，其中所述膜包含至少一种III-V族化合物或至少一种II-VI族化合物。

公开(公告)号：US09515146B2

公开(公告)日：2016-12-06

申请号：US14701621

申请日：2015-05-01

申请人： Kabushiki Kaisha Toshiba

发明人： Toshiki Hikosaka ,  Hiroshi Ono ,  Shinya Nunoue

IPC分类号： H01L29/04 ,  H01L29/20 ,  H01L21/02 ,  H01L33/32 ,  H01L29/15 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/18 ,  H01L29/78 ,  H01L29/872 ,  H01L29/66 ,  H01L33/00 ,  H01L33/16 ,  H01L29/10 ,  H01L29/778 ,  H01L29/737 ,  H01L33/12

CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/66143 ,  H01L29/66242 ,  H01L29/66522 ,  H01L29/737 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/872 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/1852 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  Y02E10/544 ,  Y02P70/521

摘要： According to one embodiment, a nitride semiconductor layer spreading along a first surface is provided. The nitride semiconductor layer includes a first region and a second region. A length of the first region in a first direction parallel to the first surface is longer than a length of the first region in a second direction parallel to the first surface and perpendicular to the first direction. The second region is arranged with the first region in the second direction. A length of the second region in the first direction is longer than a length of the second region in the second direction. A c-axis being is tilted with respect to the second direction for the first region and the second region. The c-axis intersects a third direction perpendicular to the first surface.

摘要翻译： 根据一个实施例，提供沿着第一表面扩展的氮化物半导体层。 氮化物半导体层包括第一区域和第二区域。 平行于第一表面的第一方向上的第一区域的长度比平行于第一表面并垂直于第一方向的第二方向上的第一区域的长度长。 第二区域沿第二方向布置有第一区域。 第二方向上的第二区域的长度比第二方向上的第二区域的长度长。 c轴相对于第一区域和第二区域的第二方向倾斜。 c轴与第一表面垂直的第三方向相交。

公开(公告)号：US09449868B2

公开(公告)日：2016-09-20

申请号：US14685399

申请日：2015-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Anthony J. Lochtefeld

IPC分类号： H01L21/66 ,  H01L21/762 ,  H01L21/02 ,  H01L21/18 ,  H01L31/18 ,  H01L33/00 ,  H01L33/12 ,  H01L29/15 ,  H01L29/861 ,  H01L29/04 ,  H01L29/88 ,  H01L33/52

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/187 ,  H01L29/04 ,  H01L29/151 ,  H01L29/861 ,  H01L29/882 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/12 ,  H01L33/52 ,  H01L2933/005 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of forming a photonic device that comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The method may further include forming a top diode material and an active diode region between the top and bottom diode materials.

摘要翻译： 一种形成光子器件的方法，该光子器件包括衬底和介电材料，该电介质材料包括暴露衬底的一部分的两个或更多个开口，所述两个或更多个开口各自具有至少为1的长宽比。 与衬底晶格失配的半导体材料占据两个或更多个开口，并且在两个或更多个开口上方聚结形成底部二极管区域。 该方法还可以包括在顶部和底部二极管材料之间形成顶部二极管材料和有源二极管区域。

公开(公告)号：US20160197146A1

公开(公告)日：2016-07-07

申请号：US15072145

申请日：2016-03-16

申请人： Quantum Semiconductor LLC

发明人： Carlos Jorge R.P. Augusto

IPC分类号： H01L29/15 ,  H01L29/04 ,  H01L29/161

CPC分类号： H01L29/155 ,  H01L27/1203 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/151 ,  H01L29/161 ,  H01L29/165 ,  H01L29/68 ,  H01L29/7371 ,  H01L29/78 ,  H01L29/7833 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1812 ,  Y02E10/50

摘要： A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

摘要翻译： 包含IV族元素的超晶格单元重复多次以形成超晶格。 每个超晶格单元具有彼此平行的多个有序原子平面。 超晶格单元中的至少两个原子平面具有不同的化学成分。 超晶格单元中的一个或多个原子平面选自碳，锡和铅中的一种或多种组分。 这些超晶格形成各种应用，包括但不限于晶体管，光传感器和光源。

公开(公告)号：US20160005849A1

公开(公告)日：2016-01-07

申请号：US14321539

申请日：2014-07-01

申请人： QUALCOMM Incorporated

发明人： Xia LI ,  Bin YANG ,  Ming CAI

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/201 ,  H01L29/205 ,  H01L21/762 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L29/7789 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/76224 ,  H01L29/0657 ,  H01L29/151 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7781 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/7787 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78696

摘要： An inner fin of a high bandgap material is on a substrate, having two vertical faces, and is surrounded by a carrier redistribution fin of a low bandgap material. The inner fin and the carrier redistribution fin have two vertical interfaces. The carrier redistribution fin has a thickness and a bandgap relative to the bandgap of the inner fin that establishes, along the two vertical interfaces, an equilibrium of a corresponding two two-dimensional electron gasses.

公开(公告)号：US20150357419A1

公开(公告)日：2015-12-10

申请号：US14828148

申请日：2015-08-17

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L33/00 ,  H01L29/15 ,  H01L29/36 ,  H01L29/872

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

摘要翻译： 外延基团氮化物缓冲层结构提供在异质基底上，其中缓冲层结构具有至少一个应力管理层序列，其包括布置在第一和第二组 - 氮化物层，其中所述层间结构包括具有比所述第一和第二组氮化物层的材料更大的带隙的组氮化物中间层材料，并且其中p型掺杂剂浓度分布下降，起始 从层间结构向第一和第二组氮化物层转变的至少1×10 18 cm -3至少两倍。

公开(公告)号：US20150221546A1

公开(公告)日：2015-08-06

申请号：US14685399

申请日：2015-04-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Anthony J. Lochtefeld

IPC分类号： H01L21/762 ,  H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/187 ,  H01L29/04 ,  H01L29/151 ,  H01L29/861 ,  H01L29/882 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/12 ,  H01L33/52 ,  H01L2933/005 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of forming a photonic device that comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The method may further include forming a top diode material and an active diode region between the top and bottom diode materials.

摘要翻译： 一种形成光子器件的方法，该光子器件包括衬底和介电材料，该电介质材料包括暴露衬底的一部分的两个或更多个开口，所述两个或更多个开口各自具有至少为1的长宽比。 与衬底晶格失配的半导体材料占据两个或更多个开口，并且在两个或更多个开口上方聚结形成底部二极管区域。 该方法还可以包括在顶部和底部二极管材料之间形成顶部二极管材料和有源二极管区域。

公开(公告)号：US09093354B1

公开(公告)日：2015-07-28

申请号：US14683670

申请日：2015-04-10

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： De Yuan Xiao

IPC分类号： H01L29/06 ,  H01L29/15 ,  H01L29/78 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/151 ,  H01L29/0657 ,  H01L29/0665 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7789 ,  H01L29/785

摘要： Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.

摘要翻译： 提供了三维量子阱晶体管和制造方法。 可以在翅片部分的绝缘表面上依次形成量子阱层，阻挡层和栅极结构。 栅极结构可以形成在阻挡层上并且横跨翅片部分。 QW层和阻挡层可以形成晶体管的异质结。 可以在栅极结构的两侧的翅片部分中形成凹部以悬挂侧壁间隔件。 可以通过在凹槽中生长外延材料来形成源极和漏极，并且形成在栅电极的两个侧壁上的侧壁间隔物可以位于源极和漏极的表面上。