公开(公告)号：US20240136467A1

公开(公告)日：2024-04-25

申请号：US18530694

申请日：2023-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yong Hyun BAEK ,  Ji Hun KANG ,  Chae Hon KIM ,  Ji Hoon PARK ,  So Ra LEE

IPC: H01L33/06 ,  G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/06 ,  G09G3/2003 ,  G09G3/32 ,  H01L25/0753 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  F21S6/003 ,  G09G2300/0452

Abstract: A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

公开(公告)号：US20240136345A1

公开(公告)日：2024-04-25

申请号：US18494109

申请日：2023-10-24

Applicant: Apple Inc.

Inventor： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC: H01L25/16 ,  H01L23/31 ,  H01L25/00 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L23/3171 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/005 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L21/56

Abstract: A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

公开(公告)号：US20240128425A1

公开(公告)日：2024-04-18

申请号：US18535564

申请日：2023-12-11

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/62 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H10K50/814

Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

公开(公告)号：US20240128397A1

公开(公告)日：2024-04-18

申请号：US17989700

申请日：2022-11-18

Applicant: PlayNitride Display Co., Ltd.

Inventor： Hsin-Chiao Fang ,  Shen-Jie Wang ,  Yen-Lin Lai

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36

CPC classification number: H01L33/0062 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36

Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

公开(公告)号：US11961800B2

公开(公告)日：2024-04-16

申请号：US17814152

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  An-Jhih Su ,  Chi-Hsi Wu ,  Wen-Chih Chiou ,  Tsang-Jiuh Wu ,  Der-Chyang Yeh ,  Ming Shih Yeh

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528 ,  H01L23/538 ,  H01L25/07 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L21/321 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L23/5226 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/11 ,  H01L24/89 ,  H01L25/072 ,  H01L25/0753 ,  H01L33/0093 ,  H01L33/38 ,  H01L33/62 ,  H01L21/3212 ,  H01L24/81 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03622 ,  H01L2224/08225 ,  H01L2224/08501 ,  H01L2224/80006 ,  H01L2224/80815 ,  H01L2224/80895 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

公开(公告)号：US11955580B2

公开(公告)日：2024-04-09

申请号：US16954465

申请日：2018-12-29

Applicant: TCL TECHNOLOGY GROUP CORPORATION

Inventor： Chaoyu Xiang ,  Xiongzhi Wang ,  Le Li ,  Tao Zhang ,  Zhenghang Xin ,  Xue Li

IPC: H01L33/06 ,  H01L33/14

CPC classification number: H01L33/06 ,  H01L33/14

Abstract: A quantum dot Light Emitting Diode, including an anode, a cathode, and a quantum dot light-emitting layer between the anode and the cathode, a carrier functional layer is arranged between the anode and the cathode. The carrier functional layer contains a magnetic material.

公开(公告)号：US20240113092A1

公开(公告)日：2024-04-04

申请号：US18483406

申请日：2023-10-09

Applicant: NANOSYS, INC.

Inventor： Willibrordus Gerardus Maria VAN DEN HOEK ,  Tsun Yin LAU ,  Cameron DANESH ,  Fariba DANESH

IPC: H01L25/16 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/405 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

公开(公告)号：US11949039B2

公开(公告)日：2024-04-02

申请号：US17290525

申请日：2019-11-04

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Boon S. Ooi ,  Aditya Prabaswara ,  Jung-Wook Min ,  Tien Khee Ng

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/007 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/32 ,  H01L2933/0016

Abstract: A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.

公开(公告)号：US20240105882A1

公开(公告)日：2024-03-28

申请号：US18324994

申请日：2023-05-28

Applicant: FUJIFILM Business Innovation Corp. ,  FUJIFILM Corporation

Inventor： Takashi KONDO ,  Michiaki MURATA ,  Saori NISHIZAKI ,  Takafumi HIGUCHI

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/465 ,  H01L33/0016 ,  H01L33/06

Abstract: A semiconductor-laminated substrate includes: a substrate; and a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor, in which the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.

公开(公告)号：US20240101897A1

公开(公告)日：2024-03-28

申请号：US18121757

申请日：2023-03-15

Applicant: Nanosys, Inc.

Inventor： Daekyoung KIM ,  Wenzhou GUO ,  Alexander TU ,  Yeewah Annie CHOW ,  Diego BARRERA ,  Christian IPPEN ,  Benjamin NEWMEYER ,  Ruiqing MA

IPC: C09K11/70 ,  C09K11/88 ,  H01L29/06 ,  H01L33/06 ,  H01L33/50

CPC classification number: C09K11/703 ,  C09K11/883 ,  H01L29/0665 ,  H01L33/06 ,  H01L33/502

Abstract: The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.