摘要:
According to an embodiment of the present invention, a method of producing an electronic circuit comprises printing first metal-containing resin particles which consist of at least a thermosetting resin and fine metal particles and second metal-containing resin particles which consist of at least a thermoplastic resin and fine metal particles by electrophotography to form a first base pattern which consists of the first metal-containing resin particles and a second base pattern which consists of the second metal-containing resin particles on a substrate; forming a first metal conductor layer on the first and second base patterns; forming a second metal conductor layer on the first metal conductor layer by electrolytic plating by supplying electric current to the first metal conductor layer; and removing the second base pattern and the first and second metal conductor layers which are formed on the second base pattern.
摘要:
A conductive underlayer is formed in an electrophotographic manner using a toner comprising toner particles containing a binder resin containing a green thermosetting resin and conductive particles having an average particle diameter of 0.05 μm to 1 μm, wherein 50% by volume particle diameter of the toner is in a range 4 μm to 12 μm and the ratio of the toner with a size of 4 μm or smaller is 20% by number or less, or a toner including external additives containing hydrophobic-treated small size metal oxide particles having a BET specific surface area of 150 m2/g to 400 m2/g and large size metal oxide particles having a BET specific surface area of 10 m2/g to 70 m2/g and then a conductive layer is formed thereon by plating.
摘要:
According to one aspect of the present invention, a semiconductor device, comprising a wiring board provided with wires and electrodes; a semiconductor element which is mounted on the wiring board and has plural connection electrodes formed on its surface; and a metal layer of fine metal particles aggregated and bonded which is interposed between the electrodes on the wiring board and the connection electrodes of the semiconductor element to connect between the electrodes and the connection electrodes, is provided.
摘要:
There is disclosed a semiconductor device which comprises a first chip-mounting substrate on which at least one semiconductor chip having a plurality of terminals is mounted, and a plurality of relay terminals electrically connected to the respective terminals of the semiconductor chip are disposed to surround a portion with the semiconductor chip mounted thereon from the outside in the vicinity of the portion, a second chip-mounting substrate which is laminated on the first chip-mounting substrate and on which at least one semiconductor chip is mounted, a plurality of relay terminals electrically connected to the respective terminals of the semiconductor chip are disposed to surround a portion with the semiconductor chip mounted thereon from the outside in the vicinity of the portion, and at least one of the semiconductor chips has a center offset from a center of a whole arrangement of the relay terminals.
摘要:
A multi-layer circuit board having a decreased number of circuit boards for mounting an electronic part that has connection electrodes arranged in the form of an area array, featuring a high yield and improved reliability. In the multi-layer circuit board, circuit patterns formed on a first circuit board on the surface of the side where said electronic part is mounted, are connected to every land positioned on the outermost side of the lands arranged in the form of an area array, and are connected to the lands alternatingly selected from the lands of the second sequence and the third sequence of the inner side; circuit patterns formed on a second circuit board are connected to every via electrically connected to the lands of the second sequence to which the circuit pattern is not connected on the first circuit board, and to the vias electrically connected to all of the lands of the fourth sequence and the fifth sequence on the first circuit board; circuit patterns formed on a third circuit board are connected to every via electrically connected to the lands of the third sequence to which the circuit pattern is not connected on the first circuit board, and to the vias electrically connected to all of the lands of the sixth sequence and the seventh sequence on the first circuit board; and circuit patterns formed on a fourth circuit board are connected to every via electrically connected to the lands of the eighth sequence and the ninth sequence on the first circuit board.
摘要:
A first insulating film is formed on an integrated circuit chip on which an I/O pad is formed. A first opening portion is formed above the I/O pad. A conductive layer and a barrier metal layer which are electrically connected to the I/O pad through the first opening portion are stacked on the first insulating film. The conductive layer and the barrier metal layer are patterned by a single mask. A second insulating film is formed on the resultant structure. A second opening portion is formed in the second insulating film at a position different from that of the first opening portion. A solder bump or metal pad is formed on the barrier metal layer in the second opening portion. The position of the solder bump or metal pad is defined by the second opening portion.
摘要:
A board body constituting a characteristic evaluation board has a holding section for holding a semiconductor chip therein. The semiconductor chip has a plurality of bumps. The respective bumps of the semiconductor chip are set in contact with corresponding electrodes with the semiconductor chip held in the holding section in the board body. Clamping mechanisms are located on the surface of the board body in the neighborhood of the holding section. The clamping mechanisms press the semiconductor chip held in the holding section. The respective bumps on the semiconductor chip are pressure contacted with the corresponding electrodes. Since the respective bumps are pressure contacted with the corresponding electrodes without using a solder, the respective bumps can be formed of an eutectic solder. The semiconductor chip held in the holding section can readily be taken out of the holding section by opening the clamping mechanisms.
摘要:
A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au--rich Au--Cu--Sn alloy of a ternary system having a single-phase structure with a composition of 15 atomic % Sn or less and 25 atomic % Cu or less.
摘要:
A display device comprising a substrate, a rectangular display section provided on the substrate and having four sides, a plurality of driving semiconductor elements formed on peripheral portions of the substrate in the vicinity of the display section, each of the driving semiconductor elements having two opposite long sides and two opposite short sides, one of the two long sides being opposed to one side of the display section, a plurality of output lines extending from the one long side of each of the driving semiconductor elements to the display section, to output signals from the driving semiconductor elements to the display section, a plurality of input lines extending from both the short sides of each of the driving semiconductor elements, to input signals to the driving semiconductor elements to drive them, a plurality of output terminals formed on each of the driving semiconductor elements along both the long sides thereof, and electrically connected to the output lines, the number of the output terminals located along one of the long sides being substantially equal to the number of the output terminals located along the other long side, and a plurality of input terminals formed on each of the driving semiconductor elements along both the short sides thereof, and electrically connected to the input lines.
摘要:
A semiconductor device having a bump electrode includes a first conductive layer formed on a predetermined portion of a substrate. An insulating layer is formed on the substrate and the first conductive layer. The insulating layer has an opening portion such that a predetermined portion of the first conductive layer is exposed. A second conductive layer is formed on the first conductive layer, a side wall of the opening portion of the insulating layer, and an upper surface of the insulating layer. A third conductive layer is formed to cover at least the insulating layer on the first conductive layer and the second conductive layer along the portion. A fourth conductive layer is formed on the third conductive layer to have an over hang portion. A side etch portion is formed surrounded with an over hang portion of the fourth conductive layer, the third conductive layer, and the insulating layer.