公开(公告)号：US20170287708A1

公开(公告)日：2017-10-05

申请号：US15469224

申请日：2017-03-24

Applicant: Canon Kabushiki Kaisha

Inventor： Weijun Liu ,  Timothy Brian Stachowiak ,  James P. DeYoung ,  Niyaz Khusnatdinov

IPC: H01L21/02 ,  H01L21/027 ,  G03F7/00

CPC classification number: H01L21/02304 ,  G03F7/0002 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/0273

Abstract: Facilitating throughput in nanoimprint lithography processes by using an imprint resist including fluorinated components and a substrate treated with a pretreatment composition to promote spreading of an imprint resist on the substrate. The interfacial surface energy between the pretreatment composition and air exceeds the interfacial surface energy between the imprint resist and air by at least 1 mN/m, and the contact angle of the imprint resist on the surface of the nanoimprint lithography template is less than 15°.

公开(公告)号：US20170263443A1

公开(公告)日：2017-09-14

申请号：US15458476

申请日：2017-03-14

Applicant: Tokyo Electron Limited

Inventor： Hiroie Matsumoto ,  Andrew W. Metz ,  Yannick Feurprier ,  Katie Lutker-Lee

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/311

CPC classification number: H01L21/0274 ,  G03F7/20 ,  G03F7/2004 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.

公开(公告)号：US20170243898A1

公开(公告)日：2017-08-24

申请号：US15436638

申请日：2017-02-17

Applicant: Samsung Display Co., Ltd.

Inventor： Duksung Kim

IPC: H01L27/12 ,  H01L29/24 ,  G02F1/1333 ,  H01L21/4757 ,  H01L21/027 ,  G02F1/1362 ,  H01L29/786 ,  H01L21/4763

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2001/13685 ,  G02F2201/123 ,  H01L21/0273 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/24 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/5284 ,  H01L2227/323

Abstract: A display device includes: a substrate including first and second light-blocking areas, and a pixel area; a light-blocking pattern at least partially at the first light-blocking area; a data line at the second light-blocking area; a first insulating layer on the light-blocking pattern and the data line; a semiconductor layer on the first insulating layer and overlapping the light-blocking pattern on a plane; a second insulating layer on the semiconductor layer; a color filter on the second insulating layer at least partially at the pixel area; a third insulating layer on the second insulating layer and the color filter; a gate line on the third insulating layer at the first light-blocking area; a pixel electrode at least partially at the pixel area; and a bridge electrode at least partially at the first light-blocking area. The second and third insulating layers directly contact one another over the semiconductor layer.

公开(公告)号：US09741580B2

公开(公告)日：2017-08-22

申请号：US14674476

申请日：2015-03-31

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L29/76 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/22 ,  H01L21/266 ,  H01L21/32 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

公开(公告)号：US20170226260A1

公开(公告)日：2017-08-10

申请号：US15514967

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Mi Sook Lee ,  Jung Keun Kim ,  Se Jin Ku ,  No Jin Park ,  Je Gwon Lee ,  Eun Young Choi ,  Sung Soo Yoon ,  Hyung Ju Ryu

IPC: C08F293/00 ,  G03F7/16 ,  C09D153/00

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F297/00 ,  C08F299/00 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/165 ,  G03F7/2004 ,  G03F7/30 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31058 ,  C08F214/182 ,  C08F261/06

Abstract: The present application provides a block copolymer and uses thereof. The block copolymer of the present application exhibits an excellent self-assembling property or phase separation property, can be provided with a variety of required functions without constraint and, especially, etching selectivity can be secured, making the block copolymer effectively applicable to such uses as pattern formation.

公开(公告)号：US20170213802A1

公开(公告)日：2017-07-27

申请号：US15481355

申请日：2017-04-06

Applicant: XINTEC INC.

Inventor： Geng-Peng PAN ,  Yi-Ming CHANG ,  Chia-Sheng LIN

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/48 ,  H01L21/768 ,  H01L21/027 ,  H01L21/268

CPC classification number: H01L24/03 ,  H01L21/0273 ,  H01L21/0334 ,  H01L21/268 ,  H01L21/302 ,  H01L21/48 ,  H01L21/481 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03831 ,  H01L2224/05017 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2924/00014

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.

公开(公告)号：US20170210938A1

公开(公告)日：2017-07-27

申请号：US15514929

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Se Jin Ku ,  Mi Sook Lee ,  Hyung Ju Ryu ,  Jung Keun Kim ,  Sung Soo Yoon ,  No Jin Park ,  Je Gwon Lee ,  Eun Young Choi

IPC: C09D153/00 ,  B05D1/00 ,  G03F7/16 ,  B05D3/00 ,  C08F293/00 ,  G03F7/09

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/165 ,  G03F7/2004 ,  G03F7/30 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31058 ,  C08F214/182

Abstract: Provided is a method of manufacturing a patterned substrate. The method may be applied to a process of manufacturing a device such as an electronic device or integrated circuit, or another use, for example, to manufacture an integrated optical system, a guidance and detection pattern of a magnetic domain memory, a flat panel display, a LCD, a thin film magnetic head or an organic light emitting diode, and used to construct a pattern on a surface to be used to manufacture a discrete tract medium such as an integrated circuit, a bit-patterned medium and/or a magnetic storage device such as a hard drive.

公开(公告)号：US20170210837A1

公开(公告)日：2017-07-27

申请号：US15328394

申请日：2015-07-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Toshiki Ito ,  Takeshi Honma ,  Shiori Yonezawa ,  Tomonori Otani ,  Kazumi Iwashita

IPC: C08F220/18 ,  G03F7/00 ,  G03F7/029 ,  G02B1/04 ,  B05D3/12 ,  H05K3/06 ,  H01L21/027 ,  H01L21/48 ,  C08F222/10 ,  B05D3/06

CPC classification number: C08F220/18 ,  B05D3/06 ,  B05D3/12 ,  C08F2/48 ,  C08F222/10 ,  C08F222/1006 ,  C08F2222/102 ,  G02B1/04 ,  G03F7/0002 ,  G03F7/027 ,  G03F7/029 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/4846 ,  H05K3/06 ,  H05K3/064

Abstract: A photocurable composition contains a polymerizable compound; and a photopolymerization initiator, in which the photocurable composition contains a compound represented by General Formula (1) shown below as the polymerizable compound, and in which, in General Formula (1), Ar represents a monovalent aromatic group which may have a substituent, R1 represents an alkyl group which may have a substituent or a hydrogen atom, R2 represents an alkyl group having (m+n) valences which may have a substituent, m is an integer of 2 or more, and n is an integer of 1 or more.

公开(公告)号：US20170207080A1

公开(公告)日：2017-07-20

申请号：US15102329

申请日：2014-02-13

Applicant: Mitsubishi Electric Corporation

Inventor： Shoichi KUGA

IPC: H01L21/027 ,  G03F7/16 ,  H01L21/02 ,  H01L21/67 ,  H01L23/544 ,  H01L21/3105

CPC classification number: G03F7/168 ,  G03F7/162 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67103 ,  H01L21/6715 ,  H01L2223/54493

Abstract: A semiconductor device manufacturing method of the present invention includes a coating step of coating a front surface of a wafer with a material containing a solvent, a volatilization step of volatilizing the solvent by heating the material, and a rinse step of jetting an edge rinse solution for removing the material from a first nozzle to a peripheral portion of the front surface of the wafer while rotating the wafer.

公开(公告)号：US20170199456A1

公开(公告)日：2017-07-13

申请号：US15293756

申请日：2016-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN PARK ,  HYUN WOO KIM ,  JIN KYU HAN

IPC: G03F7/039 ,  H01L21/3065 ,  H01L21/308 ,  G03F7/004 ,  G03F7/32 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027 ,  G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/0048 ,  G03F7/039 ,  G03F7/162 ,  G03F7/20 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081

Abstract: Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.