公开(公告)号：US08710681B2

公开(公告)日：2014-04-29

申请号：US13485527

申请日：2012-05-31

申请人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

发明人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC分类号： H01L33/62 ,  H01L33/52 ,  H01L23/48

CPC分类号： H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

摘要： A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

摘要翻译： 一种装置包括第一包装部件和第二包装部件，所述第一包装部件和第二包装部件下面并结合到第一包装部件。 成型材料设置在第一包装部件下方并被模制到第一和第二包装部件上，其中成型材料和第一包装部件形成界面。 隔离区域包括第一边缘，其中隔离区域的第一边缘接触第一封装部件的第一边缘和模制材料的第一边缘。 隔离层的底部低于界面。

公开(公告)号：US20130320572A1

公开(公告)日：2013-12-05

申请号：US13485527

申请日：2012-05-31

申请人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

发明人： Chih-Horng Chang ,  Tin-Hao Kuo ,  Tsung-Fu Tsai ,  Min-Feng Ku

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/304 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/78 ,  H01L21/82 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/564 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00

摘要： A device includes a first package component, and a second package component underlying, and bonded to, the first package component. A molding material is disposed under the first package component and molded to the first and the second package components, wherein the molding material and the first package component form an interface. An isolation region includes a first edge, wherein the first edge of the isolation region contacts a first edge of the first package component and a first edge of the molding material. The isolation has a bottom lower than the interface.

公开(公告)号：US08581399B2

公开(公告)日：2013-11-12

申请号：US13192826

申请日：2011-07-28

申请人： Tsung-Fu Tsai ,  Min-Feng Ku ,  Yian-Liang Kuo

发明人： Tsung-Fu Tsai ,  Min-Feng Ku ,  Yian-Liang Kuo

IPC分类号： H01L23/485

CPC分类号： H01L24/14 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05005 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05559 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13027 ,  H01L2224/13147 ,  H01L2224/14132 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012 ,  H01L2924/206 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01024 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device comprises a substrate comprising a major surface and a plurality of metal bumps on the major surface. Each of the plurality of metal bumps comprises a metal via on the major surface and a metal pillar on the metal via having an overlay offset between the metal pillar and metal via. A first metal bump of the metal bumps has a first overlay offset and a second metal bump of the metal bumps farther than the first metal bump to a centroid of the substrate has a second overlay offset greater than the first overlay offset.

摘要翻译： 半导体器件包括在主表面上包括主表面和多个金属凸块的衬底。 多个金属凸块中的每一个包括在主表面上的金属通孔和金属通孔上的金属柱，在金属柱和金属通孔之间具有覆盖偏移。 金属凸块的第一金属凸块具有第一覆盖偏移，并且比第一金属凸块更远的金属凸块的第二金属凸块与基板的质心具有大于第一叠加偏移的第二叠加偏移。

公开(公告)号：US08308052B2

公开(公告)日：2012-11-13

申请号：US12954121

申请日：2010-11-24

申请人： Chih-Horng Chang ,  Yian-Liang Kuo ,  Chih-Hang Tung ,  Tsung-Fu Tsai

发明人： Chih-Horng Chang ,  Yian-Liang Kuo ,  Chih-Hang Tung ,  Tsung-Fu Tsai

IPC分类号： B23K31/02 ,  H01L21/44

CPC分类号： B23K1/0016 ,  B23K1/008 ,  B23K3/085 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/14 ,  H01L2924/00

摘要： A method includes heating a package structure including a first work piece and a second work piece to melt a plurality of solder bumps between the first and the second work pieces; and after the step of heating, allowing the plurality of solder bumps to solidify. During the step of solidifying, a first side of the package structure is maintained at a first temperature higher than a melting temperature of the plurality of solder bumps by using a heating source. During the step of solidifying, a second side of the package structure is maintained at a second temperature lower than the melting temperature by using a cooling source, wherein the second side is opposite the first side.

摘要翻译： 一种方法包括加热包括第一工件和第二工件的包装结构，以熔化第一和第二工件之间的多个焊料凸块; 并且在加热步骤之后，允许多个焊料凸点固化。 在固化步骤期间，使用加热源将封装结构的第一侧保持在比多个焊料凸块的熔化温度高的第一温度。 在固化步骤期间，通过使用冷却源将封装结构的第二面保持在低于熔融温度的第二温度，其中第二侧与第一侧相对。

公开(公告)号：US08581420B2

公开(公告)日：2013-11-12

申请号：US13009377

申请日：2011-01-19

申请人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Chih-Horng Chang

发明人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Chih-Horng Chang

IPC分类号： H01L23/02

CPC分类号： H01L23/49811 ,  H01L21/76885 ,  H01L21/76886 ,  H01L23/535 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03848 ,  H01L2224/03901 ,  H01L2224/03903 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/013 ,  H01L2924/01046 ,  H01L2924/01039 ,  H01L2924/01016 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01028 ,  H01L2224/034 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： An under-bump metallization (UBM) structure in a semiconductor device includes a copper layer, a nickel layer, and a Cu—Ni—Sn intermetallic compound (IMC) layer between the copper layer and the nickel layer.

摘要翻译： 半导体器件中的凸起下金属化（UBM）结构包括在铜层和镍层之间的铜层，镍层和Cu-Ni-Sn金属间化合物（IMC）层。

公开(公告)号：US20120125981A1

公开(公告)日：2012-05-24

申请号：US12954121

申请日：2010-11-24

申请人： Chih-Horng Chang ,  Yian-Liang Kuo ,  Chih-Hang Tung ,  Tsung-Fu Tsai

发明人： Chih-Horng Chang ,  Yian-Liang Kuo ,  Chih-Hang Tung ,  Tsung-Fu Tsai

IPC分类号： B23K31/02 ,  B23K1/012 ,  B23K1/19

CPC分类号： B23K1/0016 ,  B23K1/008 ,  B23K3/085 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/14 ,  H01L2924/00

摘要： A method includes heating a package structure including a first work piece and a second work piece to melt a plurality of solder bumps between the first and the second work pieces; and after the step of heating, allowing the plurality of solder bumps to solidify. During the step of solidifying, a first side of the package structure is maintained at a first temperature higher than a melting temperature of the plurality of solder bumps by using a heating source. During the step of solidifying, a second side of the package structure is maintained at a second temperature lower than the melting temperature by using a cooling source, wherein the second side is opposite the first side.

摘要翻译： 一种方法包括加热包括第一工件和第二工件的包装结构，以熔化第一和第二工件之间的多个焊料凸块; 并且在加热步骤之后，允许多个焊料凸点固化。 在固化步骤期间，使用加热源将封装结构的第一侧保持在比多个焊料凸块的熔化温度高的第一温度。 在固化步骤期间，通过使用冷却源将封装结构的第二面保持在低于熔融温度的第二温度，其中第二侧与第一侧相对。

公开(公告)号：US20120119354A1

公开(公告)日：2012-05-17

申请号：US12944453

申请日：2010-11-11

申请人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Ming-Song Sheu ,  Yu-Ling Tsai ,  Chen-Shien Chen ,  Han-Ping Pu

发明人： Tsung-Fu Tsai ,  Yian-Liang Kuo ,  Ming-Song Sheu ,  Yu-Ling Tsai ,  Chen-Shien Chen ,  Han-Ping Pu

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L23/48

CPC分类号： H01L21/78 ,  H01L21/02013 ,  H01L21/02016 ,  H01L21/563 ,  H01L23/295 ,  H01L23/562 ,  H01L24/32 ,  H01L24/743 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81191 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2924/10156 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/10155 ,  H01L2924/00

摘要： A die has a first surface, a second surface opposite the first surface, and sidewalls includes a first portion and a second portion, wherein the first portion is closer to the first surface than the second portion. A fillet contacts the first portion of sidewalls of the die and encircles the die. A work piece is bonded to the die through solder bumps, with the second surface facing the work piece. A first underfill is filled a gap between the die and the work piece, wherein the first underfill contacts the fillet, and wherein the first underfill and the fillet are formed of different materials.

摘要翻译： 模具具有第一表面，与第一表面相对的第二表面，并且侧壁包括第一部分和第二部分，其中第一部分比第二部分更靠近第一表面。 圆角接触模具的侧壁的第一部分并且环绕模具。 工件通过焊料凸块与模具结合，第二表面面向工件。 第一底部填充物填充模具和工件之间的间隙，其中第一底部填充物接触圆角，并且其中第一底部填充物和圆角由不同的材料形成。

公开(公告)号：US20100163292A1

公开(公告)日：2010-07-01

申请号：US12483261

申请日：2009-06-12

申请人： Tsung-Fu Tsai ,  Chau-Jie Zhan ,  Jing-Yao Chang ,  Tao-Chih Chang

发明人： Tsung-Fu Tsai ,  Chau-Jie Zhan ,  Jing-Yao Chang ,  Tao-Chih Chang

IPC分类号： H01R12/04

CPC分类号： H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05576 ,  H01L2224/05578 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05684 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A package carrier including a substrate, at least an under bump metallurgic (UBM) layer and at least a conductive bump is provided. The substrate has a conductive structure and at least a pad connected with the conductive structure. A region of the pad connected with the conductive structure is a signal source region. The UBM layer is disposed on the pad and includes a first conductive pattern and a second conductive pattern. A side wall of the second conductive pattern is directly connected to a side wall of the first conductive pattern, and the second conductive pattern is disposed close to the signal source region. The conductivity of the second conductive pattern is smaller than the conductivity of the first conductive pattern. The conductive bump is disposed on the UBM layer.

摘要翻译： 提供了一种包括载体，包括至少底部凸点冶金（UBM）层和至少一个导电凸块的衬底。 衬底具有导电结构，并且至少与导电结构连接的焊盘。 与导电结构连接的焊盘的区域是信号源区域。 UBM层设置在焊盘上并且包括第一导电图案和第二导电图案。 第二导电图案的侧壁直接连接到第一导电图案的侧壁，并且第二导电图案靠近信号源区域设置。 第二导电图案的导电性小于第一导电图案的导电率。 导电凸块设置在UBM层上。

公开(公告)号：US20130341800A1

公开(公告)日：2013-12-26

申请号：US13529179

申请日：2012-06-21

申请人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

发明人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

IPC分类号： H01L21/78 ,  H01L23/522

CPC分类号： H01L23/3135 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/15 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/0502 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/05 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

摘要： A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

摘要翻译： 一种方法包括在晶片的衬底上形成电连接器，并模制聚合物层，至少一部分电连接器模制在聚合物层中。 执行第一锯切步骤以在聚合物层中形成沟槽。 在第一锯切步骤之后，执行第二锯切步骤以将晶片看成多个模具。

公开(公告)号：US08575754B2

公开(公告)日：2013-11-05

申请号：US12884188

申请日：2010-09-17

申请人： Tsung-Fu Tsai ,  Tao-Chih Chang ,  Chau-Jie Zhan

发明人： Tsung-Fu Tsai ,  Tao-Chih Chang ,  Chau-Jie Zhan

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/13012 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A dished micro-bump structure with self-aligning functions is provided. The micro-bump structure takes advantage of the central concavity for achieving the accurate alignment with the corresponding micro-bumps.

摘要翻译： 提供了具有自对准功能的碟形微凸块结构。 微凸块结构利用中心凹面来实现与相应微凸块的准确对准。