公开(公告)号：US09060432B2

公开(公告)日：2015-06-16

申请号：US13001946

申请日：2009-06-25

Applicant: Koichi Hattori ,  Keiichi Kimura ,  Naoya Kuwasaki

Inventor： Koichi Hattori ,  Keiichi Kimura ,  Naoya Kuwasaki

IPC: H05K1/09 ,  H05K3/00 ,  H05K1/02 ,  C22F1/08 ,  B21B1/40 ,  B21B3/00 ,  H05K1/03

CPC classification number: H05K1/028 ,  B21B1/40 ,  B21B2003/005 ,  C22F1/08 ,  H05K1/0393 ,  H05K1/09 ,  H05K2201/0355 ,  H05K2203/0143 ,  Y10T29/49155

Abstract: Provided are a flexible circuit board with excellent bendability and durability against hard conditions particularly in a repeated bend portion having a small curvature radius, and a method of producing the same. The flexible circuit board includes a resin layer and a wiring formed of a metal foil and is used with a bend portion provided at least one position of the wiring. The metal foil is made of a metal having a cubic crystal structure, and a cross section of the wiring cut in a thickness direction from a ridge line in the bend portion forms a principal orientation on any one of planes within a range of (20 1 0) to (1 20 0) in a rotation direction from (100) to (110) with [001] set as a zone axis. The wiring is formed so that the metal foil is made of a metal having a cubic crystal structure, and that the ridge line in the bend portion has an angle in a range of 2.9° to 87.1° relative to one of fundamental crystal axes in a surface of the metal foil.

Abstract translation: 提供一种柔性电路板，其具有优异的弯曲性和对硬条件的耐久性，特别是在具有小曲率半径的重复弯曲部分中及其制造方法。 柔性电路板包括树脂层和由金属箔形成的布线，并且与设置有布线的至少一个位置的弯曲部一起使用。 金属箔由具有立方晶体结构的金属制成，并且从弯曲部的棱线在厚度方向上切断的布线的截面在（20l）的范围内的任一平面上形成主取向 （100）〜（110）的旋转方向为（1×20），将[001]设定为区域轴。 布线形成为金属箔由具有立方晶体结构的金属制成，并且弯曲部分中的脊线相对于基本晶轴<100之一具有2.9°至87.1°的范围内的角度 >在金属箔的表面。

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

Applicant: Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

Inventor： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

IPC: H01L23/488 ,  H01L21/60

CPC classification number: H01L24/78 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43821 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01001 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract translation: 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。

公开(公告)号：US20110011619A1

公开(公告)日：2011-01-20

申请号：US12669612

申请日：2008-12-03

Applicant: Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

Inventor： Tomohiro Uno ,  Keiichi Kimura ,  Takashi Yamada

IPC: H01B5/00

CPC classification number: C22C5/02 ,  B23K35/0222 ,  B23K35/302 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C9/01 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/45683 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48486 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/3025 ,  H01L2924/01004 ,  H01L2924/01001 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01202 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/20656 ,  H01L2924/20658 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/0104 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: It is an object of the present invention to provide a highly-functional bonding wire which can reduce damages at a neck part, has good linearity of loops, stability of loop heights, and stability of bonded shape of a bonding wire, and can cope with semiconductor packaging techniques, such as low looping, thinning, achievement of a fine pitch, and three-dimensional packaging. A semiconductor-device bonding wire comprises a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. The percentage of orientations in crystalline orientations in the lengthwise direction in the surface of the skin layer is greater than or equal to 50%.

Abstract translation: 本发明的目的是提供一种可以减少颈部损伤的高功能性接合线，线圈线性良好，线圈高度稳定性和接合线的接合形状的稳定性，能够应付 半导体封装技术，如低循环，变薄，实现细间距，以及三维封装。 半导体器件接合线包括由导电金属形成的芯部件和主要由与芯部件不同的面心立方金属形成的表皮层。 在表皮层表面的长度方向的结晶取向中的<100>取向的百分比大于或等于50％。

公开(公告)号：US20090115059A1

公开(公告)日：2009-05-07

申请号：US12294416

申请日：2007-03-23

Applicant: Keiichi Kimura ,  Tomohiro Uno ,  Takashi Yamada ,  Kagehito Nishibayashi

Inventor： Keiichi Kimura ,  Tomohiro Uno ,  Takashi Yamada ,  Kagehito Nishibayashi

IPC: H01L23/49

CPC classification number: C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/85205 ,  H01L2224/85206 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01003 ,  H01L2924/01011 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01067 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01202 ,  H01L2924/01205 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/20752 ,  H01L2924/01024 ,  H01L2924/01004 ,  H01L2924/0106 ,  H01L2924/01062 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/00015 ,  H01L2924/00013 ,  H01L2924/01006

Abstract: A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.

Abstract translation: 用于半导体元件连接的金线具有高强度和粘合性。 该连接具有限定量的至少一种选自钙和稀土元素的元素，以及有限量的至少一种选自钛，钒，铬，铪，铌，钨和锆的元素。 优选并入适量的钯或铍。 钙和稀土元素的结合可以提高金丝的强度和杨氏模量，并且钛等的结合可以减少在第一次接合中压接球的压接形状的圆度的劣化 通过掺入钙和稀土元素。 接合线可以同时实现能够满足半导体尺寸减小和电极垫间距减小的机械性能和粘合性。

公开(公告)号：US5786304A

公开(公告)日：1998-07-28

申请号：US313053

申请日：1994-09-30

Applicant: Keiichi Kimura ,  Katuyoshi Miyamoto ,  Misao Hashimoto

Inventor： Keiichi Kimura ,  Katuyoshi Miyamoto ,  Misao Hashimoto

IPC: C04B37/00 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24

CPC classification number: C04B35/4508 ,  C04B37/005 ,  H01L39/02 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6585 ,  C04B2237/06 ,  C04B2237/34 ,  C04B2237/68 ,  C04B2237/708 ,  C04B2237/78 ,  C04B2237/82 ,  C04B2237/86 ,  C04B2237/88 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/704 ,  Y10S505/927

Abstract: A joining product of oxide superconducting materials having a high current density and process for producing the same. A joining product comprising a plurality of oxide superconducting materials having an identical crystal orientation joined with each other through a superconducting phase of the same type as described above which has the same crystal orientation as the oxide superconducting materials and a lower peritectic temperature than the oxide superconducting materials. A joining method comprising the steps of: regulating oxide superconducting materials to be joined so that they have an identical crystal orientation; either inserting as a solder a material comprising elements constituting an oxide superconductor having a lower peritectic temperature than the oxide superconducting materials or bringing the material comprising elements constituting an oxide superconductor having a lower peritectic temperature than the oxide superconducting materials into contact with the oxide superconducting materials to be joined; heating the assembly to a temperature below the peritectic temperature of the superconducting materials to be joined and above the peritectic temperature of the solder; and gradually cooling the heated assembly to orient and grow the same type of oxide superconductor at the joining interface. A junction product of oxide superconducting materials free from such crystal grain boundary as to inhibit the current flow and having a high critical current density can be provided and can be utilized as a magnet, a magnetic shield and a current leading material.

Abstract translation: PCT No.PCT / JP93 / 00432 Sec。 371日期1994年9月30日 102（e）1994年9月30日PCT 1993年4月2日PCT公布。 公开号WO93 / 2002500 日期为1993年10月14日，是具有高电流密度的氧化物超导材料的接合产物及其制造方法。 一种连接产品，其包括具有相同晶体取向的多个氧化物超导材料，所述多个氧化物超导材料通过与上述相同类型的超导相相互连接，所述超导相具有与氧化物超导材料相同的晶体取向，并且具有比氧化物超导的更低的包晶温度 材料 一种接合方法，包括以下步骤：调节待接合的氧化物超导材料，使其具有相同的晶体取向; 作为焊料插入构成具有比氧化物超导材料低的包晶温度的氧化物超导体的元素的材料，或者使包含构成具有比氧化物超导材料低的包晶温度的氧化物超导体的元素的材料与氧化物超导材料接触 加入; 将组件加热到低于待接合的超导材料的包晶温度并高于焊料的包晶温度的温度; 并逐渐冷却加热的组件以在接合界面处定向和生长相同类型的氧化物超导体。 可以提供不含这种晶界的氧化物超导材料的接合产物，以抑制电流和具有高的临界电流密度，并且可以用作磁体，磁屏蔽和电流引导材料。

公开(公告)号：US5324012A

公开(公告)日：1994-06-28

申请号：US910870

申请日：1992-07-06

Applicant: Masaaki Aoyama ,  Keiichi Kimura

Inventor： Masaaki Aoyama ,  Keiichi Kimura

IPC: H01L21/30 ,  B25B11/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/683

CPC classification number: G03F7/707 ,  B25B11/005 ,  B25B11/007 ,  H01L21/6838

Abstract: A holder which cleanly holds an article such as a semiconductor wafer and which is high in rigidity, light in weight, high in dimensional stability and excellent in dust resistance. The wafer holder includes a vacuum holding surface formed with a plurality of concentric or helical annular projections and annular vacuum holding grooves which are arranged at a given pitch. A plurality of vacuum holes for vacuum holding purposes are formed in the respective annular grooves so as to be arranged radially and each of the vacuum holes is subjected to pressure reduction by a vacuum source through the interior of the holder, thereby correcting the flatness of a wafer to conform with the upper surfaces of the annular projections. At least the portions of the holder which contact with the wafer (preferably the holder on the whole) are made of a sintered ceramic containing covalent bond-type conductive material such as a TiC-containing sintered Al.sub.2 O.sub.3 so that the contact portions exhibit conductivity and also less pores are present in the surface, thereby practically preventing the occurrence and deposition of fine particles.

Abstract translation: 清洁地保持半导体晶片等物品的刚性，重量轻，尺寸稳定性高，耐尘性优异的保持架。 晶片保持器包括形成有以给定间距布置的多个同心或螺旋环形突起和环形真空保持槽的真空保持表面。 在各个环形槽中形成多个用于真空保持的真空孔，以便径向布置，并且每个真空孔通过真空源通过保持器的内部进行减压，由此校正一个 晶片以与环形突起的上表面一致。 至少与晶片接触的部分（优选整体为保持器）由包含共价键型导电材料如含TiC烧结Al2O3的烧结陶瓷制成，使得接触部分显示出导电性，并且还 表面上存在较少的孔，从而实际上防止了细颗粒的发生和沉积。

公开(公告)号：US4832311A

公开(公告)日：1989-05-23

申请号：US264657

申请日：1988-10-31

Applicant: Keiichi Kimura

Inventor： Keiichi Kimura

IPC: F16K1/02 ,  F16K31/04 ,  F16K31/50 ,  F16K47/02

CPC classification number: F16K31/04 ,  F16K1/02 ,  F16K31/50 ,  F16K47/02

Abstract: A valve apparatus comprising a valve housing defining a valve bore and a valve chamber through which an inflow pipe and an outflow pipe communicate at right angles with each other. A valve stem is disposed in the valve chamber to be axially reciprocable. The valve stem carries an elastic packing fitted on a head portion of the valve stem, the elastic packing being movable into and out of pressure contact with a valve seat defined at a connection between the valve bore and the valve chamber. A support plate is mounted at an inlet of the valve bore, which support plate defines flow-through openings and a non-circular support bore. The valve stem includes a forward portion having a sectional shape fitting with the non-circular support bore and extending into the non-circular support bore.

Abstract translation: 一种阀装置，包括限定阀孔的阀壳和阀室，流入管和流出管通过该阀室彼此成直角连通。 阀杆设置在阀室中以便可轴向往复运动。 阀杆带有安装在阀杆的头部上的弹性密封件，弹性垫圈可移动进入和离开压力接触阀座，该阀座限定在阀孔和阀室之间的连接处。 支撑板安装在阀孔的入口处，该支撑板限定流通开口和非圆形支撑孔。 阀杆包括具有与非圆形支撑孔配合并延伸到非圆形支撑孔中的截面形状的前部。

公开(公告)号：USD283838S

公开(公告)日：1986-05-13

申请号：US527406

申请日：1983-08-29

Applicant: Keiichi Kimura

Designer： Keiichi Kimura

公开(公告)号：US4554362A

公开(公告)日：1985-11-19

申请号：US707691

申请日：1985-03-04

Applicant: Toshiyuki Shono ,  Keiichi Kimura ,  Takumi Maeda

Inventor： Toshiyuki Shono ,  Keiichi Kimura ,  Takumi Maeda

IPC: A61B5/145 ,  A61B5/1468 ,  C07D323/00 ,  G01N27/333

CPC classification number: C07D323/00 ,  G01N27/3335

Abstract: Bis-crown-ether derivatives having such configuration that the two crown rings may easily overlap spatially, holding a potassium or the like ion between them, and ion-selective membranes used for said bis-crown-ether derivatives as neutral carrier, which are useful as an ion sensor and are superior to the ion-selective membrane containing valinomycin.

公开(公告)号：US09112059B2

公开(公告)日：2015-08-18

申请号：US13349155

申请日：2012-01-12

Applicant: Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

Inventor： Tomohiro Uno ,  Keiichi Kimura ,  Shinichi Terashima ,  Takashi Yamada ,  Akihito Nishibayashi

IPC: H01L21/00 ,  H01L23/00

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78251 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85048 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/3025 ,  H01L2924/3861 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/01034 ,  H01L2924/01081 ,  H01L2924/20645 ,  H01L2924/20652 ,  H01L2924/20653 ,  H01L2924/00014 ,  H01L2924/20108 ,  H01L2224/45657 ,  H01L2224/45666 ,  H01L2924/01008 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2076 ,  H01L2924/2065 ,  H01L2924/20651 ,  H01L2924/20654 ,  H01L2924/00 ,  H01L2224/45124 ,  H01L2924/013 ,  H01L2924/20751 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01049

Abstract: It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.

Abstract translation: 本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄 用于细间距连接。 接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同 。 外层的厚度为0.021〜0.12μm。