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    SILICON CONTROLLED RECTIFIER (SCR) DEVICE FOR BULK FINFET TECHNOLOGY
    4.
    发明申请
    SILICON CONTROLLED RECTIFIER (SCR) DEVICE FOR BULK FINFET TECHNOLOGY 有权
    用于大容量FINFET技术的硅控制整流器（SCR）器件

    公开(公告)号：US20140097465A1

    公开(公告)日：2014-04-10

    申请号：US13646799

    申请日：2012-10-08

    申请人： Mayank Shrivastava ,  Harald Gossner

    发明人： Mayank Shrivastava ,  Harald Gossner

    IPC分类号： H01L29/74 ,  H01L21/332

    CPC分类号： H01L27/0817 ,  H01L21/845 ,  H01L27/1211

    摘要： Some aspects relate to a semiconductor device disposed on a semiconductor substrate. The device includes an STI region that laterally surrounds a base portion of a semiconductor fin. An anode region, which has a first conductivity type, and a cathode region, which has a second conductivity type, are arranged in an upper portion of the semiconductor fin. A first doped base region, which has the second conductivity type, is arranged in the base of the fin underneath the anode region. A second doped base region, which has the first conductivity type, is arranged in the base of the fin underneath the cathode region. A current control unit is arranged between the anode region and the cathode region. The current control unit is arranged to selectively enable and disable current flow in the upper portion of the fin based on a trigger signal. Other devices and methods are also disclosed.

    摘要翻译： 一些方面涉及设置在半导体衬底上的半导体器件。 该器件包括横向围绕半导体鳍片的基底部分的STI区域。 具有第一导电类型的阳极区域和具有第二导电类型的阴极区域布置在半导体鳍片的上部。 具有第二导电类型的第一掺杂基极区布置在阳极区域下方的翅片的底部。 具有第一导电类型的第二掺杂基区布置在阴极区下方的鳍的底部。 电流控制单元设置在阳极区域和阴极区域之间。 电流控制单元被布置为基于触发信号来选择性地启用和禁止鳍的上部中的电流。 还公开了其它装置和方法。

    Semiconductor devices and methods for manufacturing a semiconductor device
    5.
    发明授权
    Semiconductor devices and methods for manufacturing a semiconductor device 有权
    用于制造半导体器件的半导体器件和方法

    公开(公告)号：US08643090B2

    公开(公告)日：2014-02-04

    申请号：US12408839

    申请日：2009-03-23

    申请人： Mayank Shrivastava ,  Harald Gossner ,  Ramgopal Rao ,  Maryam Shojaei Baghini

    发明人： Mayank Shrivastava ,  Harald Gossner ,  Ramgopal Rao ,  Maryam Shojaei Baghini

    IPC分类号： H01L29/66

    CPC分类号： H01L29/0653 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66659 ,  H01L29/7835

    摘要： In various embodiments, a semiconductor device is provided. The semiconductor device may include a first source/drain region, a second source/drain region, an active region electrically coupled between the first source/drain region and the second source/drain region, a trench disposed between the second source/drain region and at least a portion of the active region, a first isolation layer disposed over the bottom and the sidewalls of the trench, electrically conductive material disposed over the isolation layer in the trench, a second isolation layer disposed over the active region, and a gate region disposed over the second isolation layer. The electrically conductive material may be coupled to an electrical contact.

    摘要翻译： 在各种实施例中，提供半导体器件。 半导体器件可以包括第一源极/漏极区域，第二源极/漏极区域，电耦合在第一源极/漏极区域和第二源极/漏极区域之间的有源区域，设置在第二源极/漏极区域和第二源极/ 所述有源区的至少一部分，设置在所述沟槽的底部和所述侧壁上的第一隔离层，设置在所述沟槽中的所述隔离层上的导电材料，设置在所述有源区上的第二隔离层和栅极区 设置在第二隔离层上。 导电材料可以耦合到电接触。

    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices
    6.
    发明申请
    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices 有权
    选择性电流泵浦以增强使用高压器件的低电压ESD钳位

    公开(公告)号：US20130250461A1

    公开(公告)日：2013-09-26

    申请号：US13429577

    申请日：2012-03-26

    申请人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    发明人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    IPC分类号： H02H9/04

    CPC分类号： H02H9/046

    摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit from an ESD event. The ESD protection device includes first and second trigger elements. Upon detecting an ESD pulse, the first trigger element provides a first trigger signal having a first pulse length. The second trigger element, upon detecting the ESD pulse, provides a second trigger signal having a second pulse length. The second pulse length is different from the first pulse length. A primary shunt shunts power of the ESD pulse away from the ESD susceptible circuit based on the first trigger signal. A current control element selectively pumps current due to the ESD pulse into a substrate of the primary shunt based on the second trigger signal.

    摘要翻译： 一些实施例涉及用于保护电路免受ESD事件的静电放电（ESD）保护装置。 ESD保护装置包括第一和第二触发元件。 在检测到ESD脉冲时，第一触发元件提供具有第一脉冲长度的第一触发信号。 第二触发元件在检测到ESD脉冲时提供具有第二脉冲长度的第二触发信号。 第二脉冲长度与第一脉冲长度不同。 基于第一触发信号，主分流器将ESD脉冲的功率分配离开ESD敏感电路。 电流控制元件基于第二触发信号选择性地将由于ESD脉冲引起的电流泵送到主分流器的衬底中。

    Method and system for electrostatic discharge protection
    8.
    发明授权
    Method and system for electrostatic discharge protection 有权
    静电放电保护方法及系统

    公开(公告)号：US08390970B2

    公开(公告)日：2013-03-05

    申请号：US12912781

    申请日：2010-10-27

    申请人： Harald Gossner ,  David Johnsson ,  Wolfgang Soldner

    发明人： Harald Gossner ,  David Johnsson ,  Wolfgang Soldner

    IPC分类号： H02H9/00

    CPC分类号： H02H9/046

    摘要： A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model.

    摘要翻译： 提供了ESD保护的方法和系统。 在一个实施例中，系统包括包括至少一个非线性元件的电路，被配置为将一组电流脉冲施加到电路的应用模块，被配置为确定至少一个频率相关和幅度相关的转移 基于所施加的电流脉冲集合的电路的功能，被配置为对所述至少一个非线性元件的至少一个频率相关和依赖于电流的阻抗建模的建模模块，以及模拟模块，用于模拟到 电路基于模型。

    Electrostatic discharge protection element
    10.
    发明授权
    Electrostatic discharge protection element 有权
    静电放电保护元件

    公开(公告)号：US07919816B2

    公开(公告)日：2011-04-05

    申请号：US11506683

    申请日：2006-08-18

    申请人： Harald Gossner ,  Christian Russ

    发明人： Harald Gossner ,  Christian Russ

    IPC分类号： H01L23/62

    CPC分类号： H01L27/1211 ,  H01L27/0288 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/8086 ,  H01L2029/7857

    摘要： A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second connection region and a channel region formed between the first and second connection regions. Furthermore, the fin resistance element has a gate region formed at least over a part of the surface of the channel region. The gate region is electrically coupled to a gate control device, which gate control device controls an electrical potential applied to the gate region in such a way that the gate controlled fin resistance element has a high electrical resistance during a first operating state of the electrical circuit and a lower electrical resistance during a second operating state, which is characterized by the occurrence of an ESD event.

    摘要翻译： 在电路中用作静电放电（ESD）保护元件的栅极控制鳍电阻元件具有鳍状结构，其具有形成在第一和第二连接区域之间的第一连接区域，第二连接区域和沟道区域。 此外，散热片电阻元件具有形成在通道区域的表面的至少一部分上的栅极区域。 栅极区域电耦合到栅极控制装置，栅极控制装置控制施加到栅极区域的电位，使得栅极控制的鳍状电阻元件在电路的第一操作状态期间具有高电阻 并且在第二操作状态期间具有较低的电阻，其特征在于发生ESD事件。