公开(公告)号：US09865463B2

公开(公告)日：2018-01-09

申请号：US15193367

申请日：2016-06-27

申请人： SII Semiconductor Corporation

发明人： Hitomi Sakurai

IPC分类号： H01L21/3205 ,  H01L21/027 ,  H01L21/28 ,  H01L29/66

CPC分类号： H01L21/0273 ,  H01L21/28123 ,  H01L21/32139 ,  H01L29/66575 ,  H01L2224/80874 ,  H01L2224/81874 ,  H01L2224/8188

摘要： In a method of manufacturing a semiconductor device, a first photoresist layer is applied on a polycrystalline silicon layer formed on a semiconductor substrate. The first photoresist layer is then patterned and cured with UV rays. The polycrystalline silicon layer is etched, using the first photoresist layer as a mask, to form a gate electrode and a resistive film of the polycrystalline silicon layer. A second photoresist layer is applied on the cured first photoresist layer and patterned to form an opening portion exposing the first photoresist layer. Impurities are ion implanted through the opening portion in the polycrystalline silicon layer. The channeling of impurities implanted during the ion implantation is suppressed by the cured first photoresist layer.

公开(公告)号：US20160148879A1

公开(公告)日：2016-05-26

申请号：US14821902

申请日：2015-08-10

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Karine Saxod ,  Marika Sorrieul

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/315 ,  H01L23/3171 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/1876 ,  H01L2224/1329 ,  H01L2224/13291 ,  H01L2224/14179 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/30135 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/81862 ,  H01L2224/81874 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A method for fabricating an electronic device, and an electronic device in a stacked configuration, includes a rear face of an integrated-circuit chip that is fixed to a front face of a support wafer. A protective wafer is located facing and at a distance from the front face of the chip, and an infused adhesive is interposed between the chip and the protective wafer and located on a zone of the front face of the chip outside a central region of this front face. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. An obstruction barrier is arranged between the chip and the protective wafer and is disposed outside the central region of the front face of the chip. An encapsulation ring surrounds the chip, the protective wafer and the obstruction barrier.

摘要翻译： 一种电子器件的制造方法和层叠结构的电子器件，其特征在于，包括固定在支撑晶片前面的集成电路芯片的背面。 保护晶片位于与芯片前表面相对并且距离芯片的前面一定距离处，并且输入的粘合剂被插入在芯片和保护晶片之间，并且位于该芯片的正面的中心区域外的区域 面对。 输注的粘合剂包括注入可固化粘合剂中的可固化粘合剂和固体间隔元件。 在芯片和保护晶片之间设置障碍屏障，并且设置在芯片前表面的中心区域的外侧。 封装环围绕芯片，保护晶片和阻塞屏障。

公开(公告)号：US09831170B2

公开(公告)日：2017-11-28

申请号：US15354447

申请日：2016-11-17

申请人： DECA Technologies Inc.

发明人： Christopher M. Scanlan ,  Timothy L. Olson

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/552

CPC分类号： H01L23/49838 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4867 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L22/14 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/48 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/552 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/03 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/08225 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/80904 ,  H01L2224/81 ,  H01L2224/81395 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81856 ,  H01L2224/81874 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0635 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/0665

摘要： A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

公开(公告)号：US20180108606A1

公开(公告)日：2018-04-19

申请号：US15825055

申请日：2017-11-28

申请人： DECA Technologies Inc.

发明人： Christopher M. Scanlan ,  Timothy L. Olson

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/552 ,  H01L23/48 ,  H01L23/31 ,  H01L21/66 ,  H01L21/56 ,  H01L21/78 ,  H01L21/304

CPC分类号： H01L23/49838 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4867 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L22/14 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/48 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/552 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/03 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/08225 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/80904 ,  H01L2224/81 ,  H01L2224/81395 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81856 ,  H01L2224/81874 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0635 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/0665

摘要： A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

公开(公告)号：US20170077022A1

公开(公告)日：2017-03-16

申请号：US15354447

申请日：2016-11-17

申请人： DECA Technologies Inc.

发明人： Christopher M. Scanlan ,  Timothy L. Olson

IPC分类号： H01L23/498 ,  H01L21/56 ,  H01L21/66 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49838 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4867 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L22/14 ,  H01L22/34 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/48 ,  H01L23/49822 ,  H01L23/49894 ,  H01L23/552 ,  H01L23/562 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/03 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05187 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/08225 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/215 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/80904 ,  H01L2224/81 ,  H01L2224/81395 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/81856 ,  H01L2224/81874 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/0635 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/0665

摘要： A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

摘要翻译： 半导体模块可以包括完全模制的基部部分，其包括平坦表面，该平坦表面还包括半导体管芯，该半导体管芯包括接触焊盘，耦合到接触焊盘并延伸到平坦表面的导电柱，以及设置在有源表面上的密封材料， 表面和导电柱周围，其中导电柱的端部从完全模制的基部的平坦表面处的密封剂材料露出。 包括布线层的积层互连结构可以设置在完全模制的基部上。 可光成像的焊料掩模材料可以布置在布线层上方并且包括开口以形成电耦合到半导体管芯和导电柱的表面安装器件（SMD）焊盘。 SMD元件可以通过表面贴装技术（SMT）电耦合到SMD贴片焊盘。

公开(公告)号：US20170005174A1

公开(公告)日：2017-01-05

申请号：US15193367

申请日：2016-06-27

申请人： SII Semiconductor Corporation

发明人： Hitomi SAKURAI

IPC分类号： H01L29/43 ,  H01L29/40

CPC分类号： H01L21/0273 ,  H01L21/28123 ,  H01L21/32139 ,  H01L29/66575 ,  H01L2224/80874 ,  H01L2224/81874 ,  H01L2224/8188

摘要： Provided is a method of manufacturing a semiconductor device, for suppressing channeling that may occur during ion implantation to a polycrystalline silicon layer (4), the method including: exposing, in an opening portion formed in a second photoresist layer (8), a first photoresist layer (5) that has been used for patterning the polycrystalline silicon layer (4); and implanting impurities by ion implantation with the first photoresist layer (5) being a mask for a gate electrode (4-1) formed of the polycrystalline silicon layer (4).

摘要翻译： 提供一种制造半导体器件的方法，用于抑制离子注入期间可能发生的多晶硅层（4）的沟道化，该方法包括：在形成于第二光致抗蚀剂层（8）的开口部分中暴露第一 已经用于图案化多晶硅层（4）的光致抗蚀剂层（5）; 以及通过第一光致抗蚀剂层（5）作为由多晶硅层（4）形成的栅电极（4-1）的掩模，通过离子注入植入杂质。

公开(公告)号：US08940198B2

公开(公告)日：2015-01-27

申请号：US13240043

申请日：2011-09-22

申请人： Arata Kishi ,  Naomichi Ohashi ,  Atsushi Yamaguchi

发明人： Arata Kishi ,  Naomichi Ohashi ,  Atsushi Yamaguchi

IPC分类号： H01B1/02 ,  C09J9/02 ,  C09J11/04 ,  H05K3/32 ,  H01L23/00 ,  C08K3/08 ,  H05K3/12 ,  H05K3/40 ,  H01L23/498 ,  H01L21/48 ,  C08K5/09

CPC分类号： C09J9/02 ,  C08K3/08 ,  C08K5/09 ,  C09J11/04 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1329 ,  H01L2224/13313 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81192 ,  H01L2224/8122 ,  H01L2224/81874 ,  H01L2924/00013 ,  H01L2924/15787 ,  H05K3/12 ,  H05K3/321 ,  H05K3/4069 ,  H05K2201/0272 ,  H05K2203/0425 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00

摘要： A conductive adhesive includes 10 to 90 wt % of Sn—Bi system solder powder and the remainder of an adhesive containing organic acid, and the Sn—Bi system solder powder is composed of solder particles having a particle size L1 of 20 to 30 μm and solder particles having a particle size L2 of 8 to 12 μm, and a mixing ratio of the Sn—Bi system solder powder is such that the solder particles having a particle size of 20 to 30 μm occupy 40 to 90 wt % with respect to the whole solder powder, and the remainder is occupied by solder particles having a particle size of 8 to 12 μm.

摘要翻译： 导电性粘合剂包含10〜90重量％的Sn-Bi系焊料粉末和剩余的含有机酸的粘合剂，Sn-Bi系焊料粉末由粒径为20〜30μm的焊料粒子构成， 粒径为8〜12μm的焊料粒子和Sn-Bi系焊料粉末的混合比例使得粒径为20〜30μm的焊料粒子相对于粒子的粒径为40〜90重量％ 整个焊料粉末，其余部分被粒径为8至12μm的焊料颗粒所占据。

公开(公告)号：US09773740B2

公开(公告)日：2017-09-26

申请号：US14821902

申请日：2015-08-10

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Karine Saxod ,  Marika Sorrieul

IPC分类号： H01L23/00 ,  H01L27/146 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/315 ,  H01L23/3171 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/1876 ,  H01L2224/1329 ,  H01L2224/13291 ,  H01L2224/14179 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/30135 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/81862 ,  H01L2224/81874 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A method for fabricating an electronic device, and an electronic device in a stacked configuration, includes a rear face of an integrated-circuit chip that is fixed to a front face of a support wafer. A protective wafer is located facing and at a distance from the front face of the chip, and an infused adhesive is interposed between the chip and the protective wafer and located on a zone of the front face of the chip outside a central region of this front face. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. An obstruction barrier is arranged between the chip and the protective wafer and is disposed outside the central region of the front face of the chip. An encapsulation ring surrounds the chip, the protective wafer and the obstruction barrier.

公开(公告)号：US20170133520A1

公开(公告)日：2017-05-11

申请号：US15410230

申请日：2017-01-19

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Karine Saxod ,  Marika Sorrieul

IPC分类号： H01L31/0203 ,  H01L31/18 ,  H01L31/02

CPC分类号： H01L23/562 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/315 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/13 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/1876 ,  H01L2224/1329 ,  H01L2224/13291 ,  H01L2224/14179 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/30135 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/81862 ,  H01L2224/81874 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/13099

摘要： A method for fabricating an electronic device includes fixing a rear face of an integrated-circuit chip to a front face of a support wafer. An infused adhesive is applied in the form of drops or segments that are separated from each other. A protective wafer is applied to the infused adhesive, and the infused adhesive is cured. The infused adhesive includes a curable adhesive and solid spacer elements infused in the curable adhesive. A closed intermediate peripheral ring is deposited on the integrated-circuit chip outside the cured infused adhesive, and an encapsulation block is formed such that it surrounds the chip, the protective wafer and the closed intermediate peripheral ring.

公开(公告)号：US20120073869A1

公开(公告)日：2012-03-29

申请号：US13240043

申请日：2011-09-22

申请人： Arata KISHI ,  Naomichi OHASHI ,  Atsushi YAMAGUCHI

发明人： Arata KISHI ,  Naomichi OHASHI ,  Atsushi YAMAGUCHI

IPC分类号： H05K1/02 ,  C09J9/02

CPC分类号： C09J9/02 ,  C08K3/08 ,  C08K5/09 ,  C09J11/04 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1329 ,  H01L2224/13313 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81192 ,  H01L2224/8122 ,  H01L2224/81874 ,  H01L2924/00013 ,  H01L2924/15787 ,  H05K3/12 ,  H05K3/321 ,  H05K3/4069 ,  H05K2201/0272 ,  H05K2203/0425 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00

摘要： A conductive adhesive includes 10 to 90 wt % of Sn—Bi system solder powder and the remainder of an adhesive containing organic acid, and the Sn—Bi system solder powder is composed of solder particles having a particle size L1 of 20 to 30 μm and solder particles having a particle size L2 of 8 to 12 μm, and a mixing ratio of the Sn—Bi system solder powder is such that the solder particles having a particle size of 20 to 30 μm occupy 40 to 90 wt % with respect to the whole solder powder, and the remainder is occupied by solder particles having a particle size of 8 to 12 μm.

摘要翻译： 导电性粘合剂包含10〜90重量％的Sn-Bi系焊料粉末和剩余的含有机酸的粘合剂，Sn-Bi系焊料粉末由粒径为20〜30μm的焊料粒子构成， 粒径为8〜12μm的焊料粒子和Sn-Bi系焊料粉末的混合比例使得粒径为20〜30μm的焊料粒子相对于粒子的粒径为40〜90重量％ 整个焊料粉末，其余部分被粒径为8至12μm的焊料颗粒所占据。