公开(公告)号：US10964730B2

公开(公告)日：2021-03-30

申请号：US16741628

申请日：2020-01-13

申请人： Applejack 199 L.P.

发明人： Oanh Nguyen ,  Wojciech Jan Walecki

IPC分类号： H01L27/12 ,  G01B11/30 ,  G01B11/24 ,  G01B11/16 ,  G01M11/08 ,  G01L1/24 ,  H01L21/66 ,  H01L21/48 ,  G01B11/06 ,  G01R31/26 ,  H01L21/16 ,  H01L29/786

摘要： A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

公开(公告)号：US20200266277A1

公开(公告)日：2020-08-20

申请号：US16651553

申请日：2018-09-27

申请人： LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

发明人： Damien LENOBLE

IPC分类号： H01L29/24 ,  H01L21/02 ,  H01L21/16 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

摘要： The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.

公开(公告)号：US10431702B2

公开(公告)日：2019-10-01

申请号：US15919545

申请日：2018-03-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Naomi Shida ,  Katsuyuki Naito ,  Mitsunaga Saito ,  Takeshi Niimoto

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L21/00 ,  H01L21/16 ,  H01L31/0224 ,  H01L51/50 ,  H01L51/56 ,  H01L29/40 ,  G02F1/1343 ,  H01L51/44 ,  H01L51/52

摘要： The present embodiments provide a transparent electrode having a laminate structure of: a first metal oxide layer having an amorphous structure and electroconductivity, a metal layer made of a metallic material containing silver or copper, a second metal oxide layer having an amorphous structure and electroconductivity, and a third metal oxide layer having an amorphous structure and continuity, stacked in this order.

公开(公告)号：US10290719B1

公开(公告)日：2019-05-14

申请号：US15855273

申请日：2017-12-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Ning Li ,  Yun Seog Lee ,  Joel P. de Souza ,  Devendra K. Sadana

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L33/00 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02 ,  H01L21/768

摘要： A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.

公开(公告)号：US10263071B2

公开(公告)日：2019-04-16

申请号：US15854072

申请日：2017-12-26

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Masakazu Okada ,  Yasushi Urakami ,  Yusuke Yamashita

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01J37/317 ,  H01L29/739 ,  H01L29/66

摘要： A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.

公开(公告)号：US10109659B2

公开(公告)日：2018-10-23

申请号：US15644754

申请日：2017-07-08

申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.

发明人： Xiaowen Lv ,  Chihyuan Tseng ,  Chihyu Su ,  Hejing Zhang

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L21/02 ,  H01L31/07 ,  H01L29/786 ,  H01L21/77

摘要： A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.

公开(公告)号：US10079250B2

公开(公告)日：2018-09-18

申请号：US15310182

申请日：2015-12-22

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Fangzhen Zhang ,  SeungJin Choi ,  Jing Niu ,  Shuang Sun ,  Zhijun Lv

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L21/027 ,  H01L21/441 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L27/1225 ,  H01L21/02565 ,  H01L21/0274 ,  H01L21/441 ,  H01L27/1218 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： The present disclosure provides an array substrate, its manufacturing method, and a display device. The method includes steps of forming a passivation layer on a base substrate, and forming a contact layer and a pixel electrode on the base substrate with the passivation layer through a single patterning process. The contact layer is made of an identical transparent conductive material to the pixel electrode.

公开(公告)号：US09803111B2

公开(公告)日：2017-10-31

申请号：US14379961

申请日：2012-10-01

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Kazutaka Honda ,  Akira Nagai ,  Makoto Satou

IPC分类号： H01L23/48 ,  H01L21/16 ,  C09J11/06 ,  B23K35/36 ,  B23K35/362 ,  H01L25/065 ,  H05K3/30 ,  H01L23/29 ,  H01L21/56 ,  C09J163/00 ,  C08K5/092 ,  H01L23/00 ,  H05K3/34

CPC分类号： C09J11/06 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C08K5/092 ,  C09J163/00 ,  H01L21/563 ,  H01L23/295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/03825 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05575 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11825 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13575 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/271 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/81907 ,  H01L2224/831 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/9205 ,  H01L2224/92122 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H05K3/305 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/8385 ,  H01L2924/00 ,  C08L63/00 ,  H01L2224/27 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2224/11 ,  H01L2924/0001

摘要： An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

公开(公告)号：US09780225B2

公开(公告)日：2017-10-03

申请号：US14518126

申请日：2014-10-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L29/76 ,  H01L31/112 ,  H01L21/00 ,  H01L21/16 ,  H01L21/336 ,  H01L29/786 ,  G11C11/403 ,  H01L27/108 ,  H01L27/11 ,  H01L27/1156 ,  H01L27/12 ,  H01L29/24 ,  G11C16/04 ,  H01L21/02

CPC分类号： H01L29/7869 ,  G11C11/403 ,  G11C16/0433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/10873 ,  H01L27/1108 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.

公开(公告)号：US09773917B2

公开(公告)日：2017-09-26

申请号：US14651376

申请日：2014-10-30

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jiangbo Chen ,  Dongfang Wang

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  C23C14/08 ,  C23C14/14 ,  C23C14/28 ,  C23C14/34 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/086 ,  C23C14/14 ,  C23C14/28 ,  C23C14/3457 ,  C23C14/3492 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696

摘要： A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.