公开(公告)号：EP2650906B1

公开(公告)日：2024-10-09

申请号：EP13003427.5

申请日：2005-06-02

IPC分类号： H01L21/308 ,  H01L21/208 ,  H01L21/326 ,  H01L21/4763 ,  H01L23/48 ,  H01L27/01 ,  H01L29/06 ,  H01L29/08 ,  H01L23/00 ,  H01L29/786 ,  H01L27/12 ,  H01L31/18 ,  H01L21/683

CPC分类号： B81C2201/018520130101 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/1804 ,  H01L2924/1204120130101 ,  Y10S977/724 ,  Y10S977/707 ,  Y02E10/547 ,  H01L2224/8300520130101 ,  H01L2224/0361420130101 ,  H01L2224/8086220130101 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L21/6835 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/6836820130101 ,  H01L2221/6838120130101 ,  H01L2224/033220130101 ,  H01L2224/034520130101 ,  H01L2224/036220130101 ,  H01L2224/0507320130101 ,  H01L2224/0508220130101 ,  H01L2224/0512420130101 ,  H01L2224/0514420130101 ,  H01L2224/0515520130101 ,  H01L2224/0516620130101 ,  H01L2224/0555220130101 ,  H01L2224/0555320130101 ,  H01L2224/0555420130101 ,  H01L2224/0555520130101 ,  H01L2224/0564420130101 ,  H01L2224/0566620130101 ,  H01L2224/0822520130101 ,  H01L2224/291920130101 ,  H01L2224/3222520130101 ,  H01L2224/8000620130101 ,  H01L2224/8012120130101 ,  H01L2224/8089520130101 ,  H01L2224/8312120130101 ,  H01L2224/8319220130101 ,  H01L2224/8319320130101 ,  H01L2224/838520130101 ,  H01L2224/8386220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L2224/9720130101 ,  H01L2924/1025320130101 ,  H01L2924/1032920130101 ,  H01L2924/1515920130101 ,  H01L2924/1516220130101 ,  H01L2924/157920130101 ,  H01L27/1285 ,  H01L27/1292 ,  H01L2924/1309120130101 ,  H01L2924/130620130101 ,  H01L2924/146120130101 ,  H01L21/02628 ,  H01L2924/130520130101 ,  H01L2924/1203220130101 ,  H01L2924/1578820130101 ,  H01L31/03926 ,  H01L31/1864 ,  H01L31/1896 ,  H01L2924/1204220130101 ,  H01L2924/1204420130101 ,  H01L2924/1203620130101 ,  H01L2924/1204320130101 ,  H01L2224/9520130101 ,  H01L2924/1306320130101 ,  H01L2924/1420130101 ,  H01L2924/1305520130101 ,  H01L21/02603 ,  Y02P70/50

公开(公告)号：EP4354491A1

公开(公告)日：2024-04-17

申请号：EP23203561.8

申请日：2023-10-13

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： COUDRAIN, Perceval ,  GARNIER, Arnaud ,  PIGNOL, Jeanne

IPC分类号： H01L21/56 ,  H01L23/36 ,  H01L23/552 ,  H01L23/427 ,  H01L21/60 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/373

CPC分类号： H01L23/552 ,  H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3128 ,  H01L24/83 ,  H01L2224/0410520130101 ,  H01L2224/1210520130101 ,  H01L2224/7326720130101 ,  H01L2224/3224520130101 ,  H01L24/19 ,  H01L2224/9224420130101 ,  H01L2224/8300520130101 ,  H01L23/3735 ,  H01L23/427 ,  H01L23/3672 ,  H01L23/49816 ,  H01L23/36 ,  H01L24/13

摘要： Procédé de réalisation d'un dispositif électronique de type SiP, comprenant :
- report d'une puce électronique (100) sur un premier substrat (102) tel qu'une face d'interconnexion électrique de la puce soit disposée du côté du premier substrat ;
- encapsulation de la puce dans un matériau d'encapsulation (108) ;
- réalisation d'au moins une première couche métallique (112) sur le matériau d'encapsulation et la puce ;
- réalisation d'au moins une deuxième couche métallique (114) sur un deuxième substrat (116) ;
- collage des première et deuxième couches métalliques;
- désolidarisation du premier substrat (102) vis-à-vis de la puce et du matériau d'encapsulation ;
- réalisation d'au moins une couche de redistribution (121) couplée électriquement à la face d'interconnexion électrique ;
- réalisation d'éléments d'interconnexion électrique (122) sur la couche de redistribution tels que les éléments d'interconnexion électrique soient couplés électriquement à la puce par la couche de redistribution.

公开(公告)号：EP4411843A2

公开(公告)日：2024-08-07

申请号：EP24169398.5

申请日：2018-05-07

申请人： The Regents of the University of California

发明人： KAMIKAWA, Takeshi ,  GANDROTHULA, Srinivas ,  LI, Hongjian ,  COHEN, Daniel A.

IPC分类号： H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

公开(公告)号：EP4425538A1

公开(公告)日：2024-09-04

申请号：EP24155021.9

申请日：2024-01-31

申请人： Kioxia Corporation

发明人： Noda, Mitsuhiko ,  Kashiwada, Saori

IPC分类号： H01L21/78 ,  H01L21/822 ,  H01L25/065 ,  H01L23/48

CPC分类号： H01L24/83 ,  H01L24/94 ,  H01L2224/8300520130101 ,  H01L21/8221 ,  H01L21/7813 ,  H01L25/0657

摘要： According to one embodiment, a method of manufacturing a semiconductor device includes: forming a laser peeling film above a first semiconductor substrate; forming a circuit layer above the laser peeling film; bonding the first semiconductor substrate and a second semiconductor substrate; applying a laser beam to a back surface of the first semiconductor substrate; and peeling the first semiconductor substrate to maintain the circuit layer on a side of the second semiconductor substrate. Forming the laser peeling film includes forming, inside the laser peeling film, a thermal diffusion layer. The thermal diffusion layer includes a member having a coefficient of thermal conductivity higher than that of the laser peeling film.

公开(公告)号：EP3619748B1

公开(公告)日：2024-04-17

申请号：EP18794585.2

申请日：2018-05-07

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01S5/02 ,  H01L21/02 ,  H01S5/343 ,  H01L33/46 ,  H01L33/32 ,  H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

公开(公告)号：EP4434080A2

公开(公告)日：2024-09-25

申请号：EP22817263.1

申请日：2022-11-14

申请人： International Business Machines Corporation

发明人： FAROOQ, Mukta ,  KELLY, James

IPC分类号： H01L21/60 ,  H01L25/065 ,  H01L25/18 ,  H01L23/498 ,  H01L23/48 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L2224/3222520130101 ,  H01L2224/8300520130101 ,  H01L24/96 ,  H01L2924/1816220130101 ,  H01L2924/181620130101 ,  H01L2224/1210520130101 ,  H01L2224/7320120130101 ,  H01L2224/921220130101 ,  H01L2224/1622720130101 ,  H01L25/0655 ,  H01L25/0652 ,  H01L25/50 ,  H01L2225/0651720130101 ,  H01L2225/0657220130101 ,  H01L2225/0658620130101 ,  H01L25/18 ,  H01L23/49827 ,  H01L2224/9520130101 ,  H01L2224/0410520130101 ,  H01L24/73 ,  H01L2924/1531120130101 ,  H01L2924/1519220130101 ,  H01L2224/2413720130101 ,  H01L24/92 ,  H01L2924/1515320130101 ,  H01L2224/7326720130101 ,  H01L2224/9224420130101 ,  H01L2224/920220130101 ,  H01L24/82 ,  H01L2224/7321720130101 ,  H01L2224/8389620130101 ,  H01L2224/9214420130101 ,  H01L24/24 ,  H01L23/481 ,  H01L2224/21420130101

公开(公告)号：EP4420160A1

公开(公告)日：2024-08-28

申请号：EP22817376.1

申请日：2022-11-22

申请人： International Business Machines Corporation

发明人： FAROOQ, Mukta ,  KNICKERBOCKER, John ,  SAKUMA, Katsuyuki

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L2224/1622520130101 ,  H01L2224/0822520130101 ,  H01L2224/0823520130101 ,  H01L24/08 ,  H01L24/80 ,  H01L24/95 ,  H01L2224/9520130101 ,  H01L2224/13120130101 ,  H01L24/16 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L23/562 ,  H01L25/0655 ,  H01L2924/1519220130101 ,  H01L2224/2617520130101 ,  H01L2224/7320420130101 ,  H01L2224/9212520130101 ,  H01L2924/1531320130101 ,  H01L2924/161520130101 ,  H01L2924/1625120130101 ,  H01L2224/7325320130101 ,  H01L2224/8000620130101 ,  H01L2224/8100520130101 ,  H01L2224/8300520130101 ,  H01L2924/351120130101 ,  H01L23/16

公开(公告)号：EP4404246A1

公开(公告)日：2024-07-24

申请号：EP24151173.2

申请日：2024-01-10

申请人： MediaTek Inc.

发明人： TSAO, Pei-Haw ,  WONG, Te-Chi

IPC分类号： H01L21/56 ,  H01L23/16 ,  H01L23/00 ,  H01L23/58 ,  H01L25/065 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L21/563 ,  H01L23/16 ,  H01L23/562 ,  H01L23/585 ,  H01L25/0655 ,  H01L23/3128 ,  H01L23/49816 ,  H01L25/18 ,  H01L24/16 ,  H01L24/13 ,  H01L23/147 ,  H01L24/81 ,  H01L2224/1622720130101 ,  H01L2224/3222520130101 ,  H01L2224/7320420130101 ,  H01L2224/9212520130101 ,  H01L2224/8100520130101 ,  H01L2224/8300520130101 ,  H01L2224/1623520130101 ,  H01L23/5385

摘要： A semiconductor package (1) includes a package substrate (20), an interposer (200) on and electrically connected to the package substrate (20), a central logic die (101) disposed on and electrically connected to the interposer (200), peripheral function dies (102) disposed on and electrically connected to the interposer (200) and located in proximity to the central logic die (101), and at least one dummy die (103) disposed between the central logic die (101) and the peripheral function dies (102) so as to form a rectangular shaped die arrangement. The at least one dummy die (103) is disposed at a corner position of the rectangular shaped die arrangement.

公开(公告)号：EP4360877A2

公开(公告)日：2024-05-01

申请号：EP23218338.4

申请日：2017-01-12

申请人： Kulicke & Soffa Netherlands B.V.

发明人： MARINOV, Val ,  ATANASOV, Yuriy

IPC分类号： B32B37/00

CPC分类号： B32B37/26 ,  H01L21/67132 ,  H01L21/67144 ,  H01L2224/8300520130101 ,  H01L2224/7526120130101 ,  H01L2224/2930120130101 ,  B32B37/025 ,  B32B38/0004 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  B32B2038/189120130101 ,  B32B2307/41220130101 ,  B32B2309/10520130101 ,  B32B2310/083120130101 ,  H01L2224/292920130101 ,  H01L2224/2933920130101 ,  H01L2224/3222520130101 ,  H01L2224/7525220130101 ,  H01L2224/7574520130101 ,  H01L2224/8319220130101 ,  H01L2224/8320320130101 ,  H01L2224/8385120130101 ,  H01L2224/8385520130101 ,  H01L2224/8386220130101 ,  H01L2224/8387420130101 ,  H01L2924/1420130101 ,  H01L2224/29420130101 ,  H01L2221/6832720130101 ,  H01L2221/6836820130101 ,  H01L2221/6838120130101 ,  H01L21/6835 ,  H01L2221/6832220130101 ,  H01L2221/6835420130101

摘要： A method includes dicing a wafer to form discrete components; transferring the discrete components onto a transparent carrier, including adhering the discrete component to a carrier release layer on the transparent carrier; and releasing one of the discrete components from the transparent carrier, the one of the discrete components being deposited onto a device substrate after the releasing.