公开(公告)号：US08821987B2

公开(公告)日：2014-09-02

申请号：US13717478

申请日：2012-12-17

Applicant: Intermolecular, Inc.

Inventor： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang ,  Sandip Niyogi

IPC: H05H1/00 ,  C23C16/00 ,  C23C16/50 ,  B44C1/22

CPC classification number: C23C16/50 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括外室，远程等离子体源和喷头。 喷头组件内的惰性气体端口可用于改变由喷头的不同区域中的远程等离子体源产生的反应性基团或反应中性物质的浓度和能量。 这允许使用喷头来对表面的不同区域进行表面处理。 诸如远程等离子体参数，惰性气体流量，压力等的不同参数允许以组合的方式处理衬底的不同区域。

公开(公告)号：US20140179113A1

公开(公告)日：2014-06-26

申请号：US13722820

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Chi-I Lang ,  Sandip Niyogi

IPC: H01L21/02

CPC classification number: H01L21/02 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C16/02 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32422 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/67207

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 产生包括自由基物质和带电物质的等离子体。 收集等离子体的带电物质。 衬底暴露于等离子体的自由基。 在将基板暴露于自由基物质之后，在基板上形成层。

公开(公告)号：US20140179100A1

公开(公告)日：2014-06-26

申请号：US13726972

申请日：2012-12-26

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  Amol Joshi ,  Chi-I Lang ,  Salil Mujumdar

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76886 ,  C23C14/5826 ,  C23C16/45536 ,  H01J37/32357 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3215 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68792 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 远程等离子体源可用于提供等离子体表面处理或作为将掺杂剂掺入预沉积层的源。

公开(公告)号：US20140174921A1

公开(公告)日：2014-06-26

申请号：US13725622

申请日：2012-12-21

Applicant: INTERMOLECULAR, INC.

Inventor： Hong Sheng Yang ,  Chi-I Lang ,  ShouQian Shao

IPC: C23C14/35

CPC classification number: C23C14/351 ,  C23C14/3407 ,  C23C14/352 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458

Abstract: An apparatus for sputtering wherein magnets within the magnetron of a sputtering source are positioned such that Ar+ ions arriving at the surface of a multi-piece target do not strike the target perpendicular to the surface at the gaps between the sectors of the target. The off-angle bombardment of the Ar+ ions ensures that the Ar+ ions do not result in the sputtering and deposition of target backing material through the gap between the target sectors.

Abstract translation: 一种用于溅射的设备，其中溅射源的磁控管内的磁体被定位成使得到达多件式靶的表面的Ar +离子在目标的扇区之间的间隙处不垂直于表面撞击靶。 Ar +离子的偏角轰击确保Ar +离子不会导致目标背衬材料通过目标部分之间的间隙的溅射和沉积。

公开(公告)号：US20130342230A1

公开(公告)日：2013-12-26

申请号：US13971325

申请日：2013-08-20

Applicant: Intermolecular, Inc

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01R31/26

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Measuring current-voltage (I-V) characteristics of a solar cell using a lamp that emits light, a substrate that includes a plurality of solar cells, a positive electrode attached to the solar cells, and a negative electrode peripherally deposited around each of the solar cells and connected to a common ground, an articulation platform coupled to the substrate, a multi-probe switching matrix or a Z-stage device, a programmable switch box coupled to the multi-probe switching matrix or Z-stage device and selectively articulating the probes by raising the probes until in contact with at least one of the positive electrode and the negative electrode and lowering the probes until contact is lost with at least one of the positive electrode and the negative electrode, a source meter coupled to the programmable switch box and measuring the I-V characteristics of the substrate.

公开(公告)号：US20130071982A1

公开(公告)日：2013-03-21

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US09224644B2

公开(公告)日：2015-12-29

申请号：US13726972

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Amol Joshi ,  Chi-I Lang ,  Salil Mujumdar

IPC: H01L21/768 ,  C23C14/58 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/3215 ,  H01J37/32 ,  H01L21/28 ,  H01L29/51 ,  H01L21/67 ,  H01L21/687 ,  H01L29/66

CPC classification number: H01L21/76886 ,  C23C14/5826 ,  C23C16/45536 ,  H01J37/32357 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3215 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68792 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 远程等离子体源可用于提供等离子体表面处理或作为将掺杂剂掺入预沉积层的源。

公开(公告)号：US20140262749A1

公开(公告)日：2014-09-18

申请号：US13804265

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Olov Karlsson ,  Kevin Kashefi ,  Chi-I Lang ,  Dipankar Pramanik ,  Hong Sheng Yang ,  Xuena Zhang

IPC: C23C14/35

CPC classification number: B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00527 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/345

Abstract: Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment.

Abstract translation: 包含现场分离的溅射沉积和位置分离等离子体处理的基板的组合处理可以在相同的处理室中进行。 被配置为执行溅射沉积和等离子体处理的处理室包括接地屏蔽，其具有设置在衬底上方的至少一个孔，以形成小的，较暗的空间间隙，以减少或消除间隙内的任何等离子体形成。 等离子体处理可以包括等离子体蚀刻或等离子体表面处理。

公开(公告)号：US20140231744A1

公开(公告)日：2014-08-21

申请号：US14264475

申请日：2014-04-29

Applicant: Intermolecular Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

公开(公告)号：US20140227880A1

公开(公告)日：2014-08-14

申请号：US14253712

申请日：2014-04-15

Applicant: Intermolecular, Inc.

Inventor： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02274 ,  C23C16/0227 ,  C23C16/44 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4586 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32779 ,  H01L21/3065 ,  H01L21/67069

Abstract: According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.

Abstract translation: 根据本公开的各种实施例，描述了一种用于增强沉积和蚀刻技术的装置和方法，包括基座，具有至少两个嵌入基座的电极的基座，基座上方的喷头，连接到基座的等离子体气体源 淋浴头，其中所述喷头被构造成将等离子体气体输送到所述喷头和所述基板之间的处理区域，以及电源，其可操作地连接到所述喷头和所述至少两个电极，其中等离子体基本上包含在对应于 所述至少两个电极。