Ultra high performance interposer
    11.
    发明授权

    公开(公告)号:US10032715B2

    公开(公告)日:2018-07-24

    申请号:US15601406

    申请日:2017-05-22

    Abstract: An interconnection component includes a semiconductor material layer having a first surface and a second surface opposite the first surface and spaced apart in a first direction. At least two metalized vias extend through the semiconductor material layer. A first pair of the at least two metalized vias are spaced apart from each other in a second direction orthogonal to the first direction. A first insulating via in the semiconductor layer extends from the first surface toward the second surface. The insulating via is positioned such that a geometric center of the insulating via is between two planes that are orthogonal to the second direction and that pass through each of the first pair of the at least two metalized vias. A dielectric material at least partially fills the first insulating via or at least partially encloses a void in the insulating via.

    DUAL-CHANNEL DIMM
    14.
    发明申请
    DUAL-CHANNEL DIMM 审中-公开

    公开(公告)号:US20170186474A1

    公开(公告)日:2017-06-29

    申请号:US14980709

    申请日:2015-12-28

    CPC classification number: G11C11/4076 G11C5/04 G11C7/10 G11C11/4093

    Abstract: A dual inline memory module can include a module card having first and second opposed surfaces and a plurality of microelectronic elements each having a surface facing a surface of the module card. The module card can have a plurality of parallel edge contacts, the edge contacts including first and second contacts, the first and second contacts configured to carry command and address information and data signals corresponding to first and second memory channels, respectively, the first memory channel being independent from the second memory channel. Each microelectronic element can have memory storage array function being of type LPDDRx and being configured to sample the command and address information at least twice per clock cycle. The plurality of microelectronic elements can be configured to implement the first and second memory channels. The first and second microelectronic elements can be configured for communication via the first and second contacts, respectively.

    Flexible I/O partition of multi-die memory solution

    公开(公告)号:US09640282B1

    公开(公告)日:2017-05-02

    申请号:US14980189

    申请日:2015-12-28

    Abstract: A method of testing a microelectronic package configured to provide memory access can include energizing terminals of the microelectronic package, the terminals including first terminals configured to carry address information and second terminals configured to carry data signals. The method can also include applying read and write test data signals simultaneously to the first and second sets of second terminals, so as to simultaneously test read and write operation in first and second microelectronic elements of the microelectronic package. The first and second microelectronic elements can be configured to provide access to memory storage array locations in the first and second microelectronic elements. The terminals can also include third terminals configured to receive a test mode input that reconfigures the first and second microelectronic elements to permit simultaneous access to memory storage array locations in the first and second microelectronic elements.

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