公开(公告)号：US20120175732A1

公开(公告)日：2012-07-12

申请号：US13423739

申请日：2012-03-19

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/06 ,  H01L21/56

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.

摘要翻译： 半导体器件包括IPD结构，安装到具有倒装芯片互连的IPD结构的第一半导体管芯和与第一半导体管芯相邻设置的多个第一导电柱。 半导体器件还包括设置在第一导电柱和第一半导体管芯之上的第一模塑料，与第一半导体管芯上的第一导电柱结合的芯结构以及设置在芯结构中的多个导电TSV。 半导体器件还包括设置在芯结构上的多个第二导电柱，安装在芯结构上的第二半导体管芯，以及设置在第二导电柱和第二半导体管芯上的第二模塑料。 第二半导体管芯与芯结构电连接。

公开(公告)号：US20120126369A1

公开(公告)日：2012-05-24

申请号：US13365097

申请日：2012-02-02

申请人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang ,  Robert C. Frye

发明人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang ,  Robert C. Frye

IPC分类号： H01L27/06 ,  H01L21/02

CPC分类号： H01L27/0794 ,  H01G4/228 ,  H01G4/33 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L27/016 ,  H01L28/40 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73207 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/01074 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2224/05552

摘要： A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A passive device is formed on the substrate by depositing a first conductive layer over the substrate, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the insulating layer. The passive device is a metal-insulator-metal capacitor. The deposition of the insulating layer and first and second conductive layers is performed without photolithography. An under bump metallization (UBM) layer is formed on the substrate in electrical contact with the plurality of active devices. A solder bump is formed over the UBM layer. The passive device can also be a resistor by depositing a resistive layer over the first conductive layer and depositing a third conductive layer over the resistive layer. The passive device electrically contacts the solder bump.

摘要翻译： 倒装芯片半导体器件具有在其上形成有多个有源器件的衬底。 通过在衬底上沉积第一导电层，在第一导电层上沉积绝缘层，以及在绝缘层上沉积第二导电层，在衬底上形成无源器件。 无源器件是金属 - 绝缘体 - 金属电容器。 绝缘层和第一和第二导电层的沉积在没有光刻的情况下进行。 在与多个有源器件电接触的衬底上形成凸块下金属化（UBM）层。 在UBM层上形成焊料凸块。 无源器件还可以是通过在第一导电层上沉积电阻层并在电阻层上沉积第三导电层的电阻器。 无源器件与焊料凸块电接触。

公开(公告)号：US08168470B2

公开(公告)日：2012-05-01

申请号：US12329789

申请日：2008-12-08

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L21/00

CPC分类号： H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19106 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is made with a conductive via formed through a top-side of the substrate. The conductive via extends vertically through less than a thickness of the substrate. An integrated passive device (IPD) is formed over the substrate. A plurality of first conductive pillars is formed over the first IPD. A first semiconductor die is mounted over the substrate. An encapsulant is formed around the first conductive pillars and first semiconductor die. A second IPD is formed over the encapsulant. An interconnect structure is formed over the second IPD. The interconnect structure operates as a heat sink. A portion of a back-side of the substrate is removed to expose the first conductive via. A second semiconductor die is mounted to the back-side of the substrate. The second semiconductor die is electrically connected to the first IPD and first semiconductor die through the conductive via.

摘要翻译： 半导体器件由通过衬底的顶侧形成的导电通孔制成。 导电通孔垂直延伸穿过小于衬底的厚度。 集成无源器件（IPD）形成在衬底上。 在第一IPD上形成多个第一导电柱。 第一半导体管芯安装在衬底上。 围绕第一导电柱和第一半导体管芯形成密封剂。 在密封剂上形成第二个IPD。 在第二IPD上形成互连结构。 互连结构作为散热器工作。 去除衬底的背面的一部分以露出第一导电通孔。 第二半导体管芯安装到衬底的背面。 第二半导体管芯通过导电通孔电连接到第一IPD和第一半导体管芯。

公开(公告)号：US07772081B2

公开(公告)日：2010-08-10

申请号：US12212524

申请日：2008-09-17

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： H01L27/016 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the first metal layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the resistive and dielectric layers. The first metal layer and the resistive layer are electrically connected to form a resistor and the first metal layer forms a first inductor. A wafer supporter is mounted over the IPD using an adhesive material and a third metal layer is deposited over the IPD. The third metal layer forms a second inductor that is electrically connected to the capacitor and the resistor by the TSVs of the IPD. An interconnect structure is connected to the IPD.

摘要翻译： 通过提供集成无源器件（IPD）制造半导体器件。 在IPD中形成了硅通孔（TSV）。 通过在IPD上沉积第一金属层，在第一金属层上沉积电阻层，在第一金属层上沉积电介质层，并在第一金属层上沉积第二金属层，并在第一金属层的上方沉积第二金属层， 电介质层。 第一金属层和电阻层电连接以形成电阻器，并且第一金属层形成第一电感器。 使用粘合剂材料将晶片支撑件安装在IPD上，并且第三金属层沉积在IPD上。 第三金属层形成第二电感器，其通过IPD的TSV电连接到电容器和电阻器。 互连结构连接到IPD。

公开(公告)号：US07691747B2

公开(公告)日：2010-04-06

申请号：US11947617

申请日：2007-11-29

申请人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang Zhang ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang Zhang ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L21/44

CPC分类号： H01L25/16 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/12 ,  H01L25/0652 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/2518 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2224/05599

摘要： A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.

摘要翻译： 半导体晶片包含其上形成有多个有源器件的衬底。 在基板上形成模拟电路。 模拟电路可以是电感，金属 - 绝缘体 - 金属电容或电阻。 电感由铜制成。 在衬底中形成贯穿衬底通孔（TSV）。 导电材料沉积在与模拟电路电接触的TSV中。 在与TSV电接触的衬底的背面上形成凸起下金属化层。 焊料材料沉积在UBM层上。 焊料材料被回流以形成焊料凸块。 在基板的顶表面上形成引线接合。 在TSV和UBM之间形成再分配层。 模拟电路通过TSV电连接到衬底背面的焊料凸块。

公开(公告)号：US09324700B2

公开(公告)日：2016-04-26

申请号：US12205727

申请日：2008-09-05

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L23/552 ,  H01L27/01 ,  H01L27/07

CPC分类号： H01L25/0657 ,  H01L23/552 ,  H01L25/50 ,  H01L27/016 ,  H01L27/0711 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2225/06531 ,  H01L2225/06537 ,  H01L2225/06582 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/19011 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is made by providing a substrate, forming a first insulation layer over the substrate, forming a first conductive layer over the first insulation layer, forming a second insulation layer over the first conductive layer, and forming a second conductive layer over the second insulation layer. A portion of the second insulation layer, first conductive layer, and second conductive layer form an integrated passive device (IPD). The IPD can be an inductor, capacitor, or resistor. A plurality of conductive pillars is formed over the second conductive layer. One conductive pillar removes heat from the semiconductor device. A third insulation layer is formed over the IPD and around the plurality of conductive pillars. A shield layer is formed over the IPD, third insulation layer, and conductive pillars. The shield layer is electrically connected to the conductive pillars to shield the IPD from electromagnetic interference.

摘要翻译： 半导体器件通过提供衬底制成，在衬底上形成第一绝缘层，在第一绝缘层上形成第一导电层，在第一导电层上形成第二绝缘层，并在第二绝缘层上形成第二导电层 绝缘层。 第二绝缘层，第一导电层和第二导电层的一部分形成集成的无源器件（IPD）。 IPD可以是电感，电容或电阻。 多个导电柱形成在第二导电层上。 一个导电柱从半导体器件中去除热量。 在IPD上并围绕多个导电柱形成第三绝缘层。 在IPD，第三绝缘层和导电柱上形成屏蔽层。 屏蔽层电连接到导电柱以屏蔽IPD免受电磁干扰。

公开(公告)号：US08445323B2

公开(公告)日：2013-05-21

申请号：US13423739

申请日：2012-03-19

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L21/00

CPC分类号： H01L25/0657 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed adjacent to the first semiconductor die. The semiconductor device further includes a first molding compound that is disposed over the first conductive posts and first semiconductor die, a core structure bonded to the first conductive posts over the first semiconductor die, and a plurality of conductive TSVs disposed in the core structure. The semiconductor device further includes a plurality of second conductive posts that are disposed over the core structure, a second semiconductor die mounted over the core structure, and a second molding compound disposed over the second conductive posts and the second semiconductor die. The second semiconductor die is electrically connected to the core structure.

摘要翻译： 半导体器件包括IPD结构，安装到具有倒装芯片互连的IPD结构的第一半导体管芯和与第一半导体管芯相邻设置的多个第一导电柱。 半导体器件还包括设置在第一导电柱和第一半导体管芯之上的第一模塑料，与第一半导体管芯上的第一导电柱结合的芯结构以及设置在芯结构中的多个导电TSV。 半导体器件还包括设置在芯结构上的多个第二导电柱，安装在芯结构上的第二半导体管芯，以及设置在第二导电柱和第二半导体管芯上的第二模塑料。 第二半导体管芯与芯结构电连接。

公开(公告)号：US08395053B2

公开(公告)日：2013-03-12

申请号：US11769296

申请日：2007-06-27

申请人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang

发明人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang

IPC分类号： H05K1/16

CPC分类号： H05K1/167 ,  H01L21/4846 ,  H01L23/49548 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/50 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/04941 ,  H05K3/467 ,  H05K2201/0195 ,  H05K2201/0317 ,  H05K2201/09436 ,  H05K2201/09672 ,  Y10T29/43 ,  Y10T428/12528 ,  H01L2224/05599

摘要： A circuit system comprising: forming a lower electrode over a substrate; forming a resistive film over the lower electrode; forming a multi-layered insulating stack over a portion of the resistive film; and forming an upper electrode over a portion of the multi-layered insulating stack.

摘要翻译： 一种电路系统，包括：在衬底上形成下电极; 在下电极上形成电阻膜; 在所述电阻膜的一部分上形成多层绝缘堆叠; 以及在所述多层绝缘堆叠的一部分上形成上电极。

公开(公告)号：US08309452B2

公开(公告)日：2012-11-13

申请号：US12826365

申请日：2010-06-29

申请人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang

发明人： Yaojian Lin ,  Haijing Cao ,  Qing Zhang

IPC分类号： H01L21/44 ,  H01L21/60

CPC分类号： H01L23/5227 ,  H01L23/645 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/056 ,  H01L2224/451 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099

摘要： A semiconductor device has a substrate with an inductor formed on its surface. First and second contact pads are formed on the substrate. A passivation layer is formed over the substrate and first and second contact pads. A protective layer is formed over the passivation layer. The protective layer is removed over the first contact pad, but not from the second contact pad. A conductive layer is formed over the first contact pad. The conductive layer is coiled on the surface of the substrate to produce inductive properties. The formation of the conductive layer involves use of a wet etchant. The second contact pad is protected from the wet etchant by the protective layer. The protective layer is removed from the second contact pad after forming the conductive layer over the first contact pad. An external connection is formed on the second contact pad.

摘要翻译： 半导体器件具有在其表面上形成有电感器的基板。 第一和第二接触垫形成在基板上。 在衬底和第一和第二接触焊盘之上形成钝化层。 在钝化层上形成保护层。 保护层在第一接触垫上移除，但不从第二接触垫移除。 导电层形成在第一接触焊盘上。 导电层被卷绕在基板的表面上以产生电感性质。 导电层的形成涉及使用湿蚀刻剂。 第二接触垫被保护层从湿蚀刻剂保护。 在第一接触垫上形成导电层之后，从第二接触焊盘去除保护层。 在第二接触垫上形成外部连接。

公开(公告)号：US08304904B2

公开(公告)日：2012-11-06

申请号：US12700114

申请日：2010-02-04

申请人： Yaojian Lin ,  Qing Zhang ,  Haijing Cao

发明人： Yaojian Lin ,  Qing Zhang ,  Haijing Cao

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/11009 ,  H01L2224/11019 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2224/13099 ,  H01L2224/05552

摘要： A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the substrate and first conductive layer. A second conductive layer is formed over the first conductive layer and first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. The second insulating layer has a sidewall between a surface of the second insulating material and surface of the second conductive layer. A protective layer is formed over the second insulating layer and surface of the second conductive layer. The protective layer follows a contour of the surface and sidewall of the second insulating layer and second conductive layer. A bump is formed over the surface of the second conductive layer and a portion of the protective layer adjacent to the second insulating layer. The protective layer protects the second insulating layer.

摘要翻译： 半导体器件具有形成在衬底上的第一导电层。 第一绝缘层形成在衬底和第一导电层上。 在第一导电层和第一绝缘层上形成第二导电层。 在第一绝缘层和第二导电层上形成第二绝缘层。 第二绝缘层在第二绝缘材料的表面和第二导电层的表面之间具有侧壁。 在第二绝缘层和第二导电层的表面上形成保护层。 保护层遵循第二绝缘层和第二导电层的表面和侧壁的轮廓。 在第二导电层的表面上形成凸块，并且与第二绝缘层相邻的部分形成保护层。 保护层保护第二绝缘层。