公开(公告)号：US20050073049A1

公开(公告)日：2005-04-07

申请号：US10619551

申请日：2003-07-16

申请人： Kunihiro Tsubosaki

发明人： Kunihiro Tsubosaki

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H05K1/02 ,  H05K3/34 ,  H01L23/48

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/0271 ,  H05K3/3436 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.

公开(公告)号：US06791194B1

公开(公告)日：2004-09-14

申请号：US09493210

申请日：2000-01-28

申请人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

发明人： Akira Nagai ,  Shuji Eguchi ,  Masahiko Ogino ,  Masanori Segawa ,  Toshiak Ishii ,  Nobutake Tsuyuno ,  Hiroyoshi Kokaku ,  Rie Hattori ,  Makoto Morishima ,  Ichiro Anjoh ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Makoto Kitano ,  Mamoru Mita ,  Norio Okabe

IPC分类号： H01L2348

CPC分类号： H01L24/50 ,  H01L23/3107 ,  H01L23/4951 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/10329 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250° C.).

摘要翻译： 通过在半导体封装结构中设置用于吸收安装基板和半导体元件之间的热膨胀差的缓冲体，即使使用有机材料来安装基板，也可获得具有优异的连接可靠性的半导体器件。 使用薄膜材料作为用于缓冲由安装基板和半导体元件之间的热膨胀差异产生的热应力的本体。 膜材料在回流温度范围（200-250℃）中的弹性模量至少为1MPa。

公开(公告)号：US06670215B2

公开(公告)日：2003-12-30

申请号：US10058319

申请日：2002-01-30

申请人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

发明人： Chuichi Miyazaki ,  Yukiharu Akiyama ,  Masanori Shibamoto ,  Tomoaki Kudaishi ,  Ichiro Anjoh ,  Kunihiko Nishi ,  Asao Nishimura ,  Hideki Tanaka ,  Ryosuke Kimoto ,  Kunihiro Tsubosaki ,  Akio Hasebe

IPC分类号： H01L2144

CPC分类号： H01L23/49816 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/50 ,  H01L2224/73215 ,  H01L2224/85951 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  Y10T29/4913 ,  Y10T29/49169 ,  H01L2924/20753 ,  H01L2224/05599

摘要： A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

公开(公告)号：US06639323B2

公开(公告)日：2003-10-28

申请号：US09983286

申请日：2001-10-23

申请人： Yukiharu Akiyama ,  Tomoaki Kudaishi ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Asao Nishimura ,  Ichiro Anjo ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Hiroshi Koyama ,  Masanori Shibamoto ,  Akira Nagai ,  Masahiko Ogino

发明人： Yukiharu Akiyama ,  Tomoaki Kudaishi ,  Takehiro Ohnishi ,  Noriou Shimada ,  Shuji Eguchi ,  Asao Nishimura ,  Ichiro Anjo ,  Kunihiro Tsubosaki ,  Chuichi Miyazaki ,  Hiroshi Koyama ,  Masanori Shibamoto ,  Akira Nagai ,  Masahiko Ogino

IPC分类号： H01L2348

CPC分类号： H01L24/50 ,  H01L23/3114 ,  H01L23/49572 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1433 ,  H01L2924/3025

摘要： A semiconductor device including a semiconductor chip having connection terminals in a peripheral part of a main surface thereof; an elastic body disposed on the main surface leaving the connection terminals exposed; an insulating tape formed on the elastic body and having openings in areas where the connection terminals are situated; plural leads formed on the top surface of the insulating tape, one end of each lead being connected to one of the connection terminals and the other end being disposed on the elastic body; plural bump electrodes formed on the other ends of the plural leads; and a resin body for sealing the connection terminals and one end of each of the leads, wherein the insulating tape protrudes beyond the chip where the plural connection terminals are arranged, and wherein the shape of the resin body is restricted by the protruding part of the insulating tape.

公开(公告)号：US06610561B2

公开(公告)日：2003-08-26

申请号：US09849230

申请日：2001-05-07

申请人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

发明人： Kunihiro Tsubosaki ,  Masachika Masuda ,  Akihiko Iwaya ,  Atsushi Nakamura ,  Chikako Imura ,  Toshihiro Shiotsuki

IPC分类号： H01L2144

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/50 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/85399 ,  H01L2224/92147 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a thin, inexpensive, high-performance semiconductor device provided with busbar leads, power leads and signal leads. A portion of the power lead connected to the busbar lead is depressed toward a major surface of a semiconductor chip to form depressed portion, and the depressed portion is bonded to the major surface of the semiconductor chip by an adhesive layer. The signal lead and the busbar lead are spaced apart from the major surface of the semiconductor chip.

摘要翻译： 本发明提供一种薄型，廉价的高性能半导体器件，其具有母线引线，电源引线和信号引线。 连接到汇流条引线的电源引线的一部分朝向半导体芯片的主表面压下以形成凹陷部分，并且凹陷部分通过粘合剂层结合到半导体芯片的主表面。 信号引线和母线引线与半导体芯片的主表面间隔开。

公开(公告)号：US06589818B2

公开(公告)日：2003-07-08

申请号：US10260409

申请日：2002-10-01

申请人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

发明人： Mitsuo Usami ,  Kunihiro Tsubosaki ,  Kunihiko Nishi

IPC分类号： H01L2144

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/19043 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor chip (105′) and a substrate (102) are bonded with an organic adhesive layer (409) containing conductive particles (406), and a pad (405) and an electrode (412) are mutually, electrically connected through the conductive particles (406). The semiconductor chip (105′) is formed by contacting a semiconductor wafer (105) attached to a tape (107) with an etchant while rotating the semiconductor wafer (105) within an in-plane direction at a high speed or reciprocating the wafer (105) laterally to uniformly etch the semiconductor wafer (105) thereby reducing the thickness thereof, and dicing the thus reduced wafer. The resultant thin chip (105′) is hot-pressed by means of a heating head (106) for bonding on the substrate (102). In this way, a thin semiconductor chip can be formed stably at low costs and bonded on a substrate without causing any crack of the chip, thereby obtaining a semiconductor device which is unlikely to break owing to the bending stress from outside.

摘要翻译： 半导体芯片（105'）和基板（102）与包含导电颗粒（406）的有机粘合剂层（409）接合，并且焊盘（405）和电极（412）相互电连接，通过导电 颗粒（406）。 半导体芯片（105'）通过使附接到带（107）的半导体晶片（105）与蚀刻剂接触而形成，同时使半导体晶片（105）在平面内方向高速旋转或使晶片 105）以均匀蚀刻半导体晶片（105），从而减小其厚度，并切割由此减小的晶片。 所得到的薄片（105'）通过加热头（106）热压，用于在基底（102）上粘合。 以这种方式，可以以低成本稳定地形成薄的半导体芯片，并且结合在基板上而不引起芯片的任何裂纹，从而获得由于来自外部的弯曲应力而不可能破裂的半导体器件。

公开(公告)号：US06342434B1

公开(公告)日：2002-01-29

申请号：US09077548

申请日：1998-06-01

申请人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

发明人： Toshio Miyamoto ,  Kunihiro Tsubosaki ,  Mitsuo Usami

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  G06K19/077 ,  G06K19/07749 ,  G06K19/0775 ,  G06K19/07779 ,  G06K19/07783 ,  H01L23/49855 ,  H01L23/5388 ,  H01L24/27 ,  H01L24/28 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/81903 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/3512

摘要： A semiconductor wafer is made thin without any cracks or warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier formed of a base and a suction pad provided on one surface of the base or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier in such a manner that a rear surface of the semiconductor wafer with no circuit elements formed therein is opposite to the carrier to form a wafer composite, and the third step of holding the carrier of the wafer composite with its semiconductor wafer side up and spin-coating an etchant on the rear surface of the semiconductor wafer thereby to make the semiconductor wafer thin.

摘要翻译： 半导体晶片制成薄而没有任何裂纹或翘曲的良好的可加工性。 半导体晶片减薄处理包括：准备由基底形成的载体和设置在基底的一个表面上或由基底膜与粘合剂形成的吸附垫的第一步骤，将半导体晶片接合到载体上的第二步骤 这样一种方式使得其中形成有电路元件的半导体晶片的后表面与载体相反以形成晶片复合物，并且第三步骤将晶片复合材料的载体保持在其半导体晶片侧面向上并且旋涂 在半导体晶片的后表面上形成蚀刻剂，从而使半导体晶片变薄。

公开(公告)号：US5466888A

公开(公告)日：1995-11-14

申请号：US384836

申请日：1995-02-07

申请人： Lim T. Beng ,  Chai T. Chong ,  Masazumi Amagai ,  Ichiro Anjoh ,  Junichi Arita ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Darvin Edwards

发明人： Lim T. Beng ,  Chai T. Chong ,  Masazumi Amagai ,  Ichiro Anjoh ,  Junichi Arita ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Darvin Edwards

IPC分类号： H01L23/31 ,  H01L23/495 ,  H01L23/28

CPC分类号： H01L24/06 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L24/05 ,  H01L24/29 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48799 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/85207 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351

摘要： A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.

公开(公告)号：US5406028A

公开(公告)日：1995-04-11

申请号：US198389

申请日：1994-02-18

申请人： Lim T. Beng ,  Chai T. Chong ,  Masazumi Amagai ,  Ichiro Anjoh ,  Junichi Arita ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Darvin Edwards

发明人： Lim T. Beng ,  Chai T. Chong ,  Masazumi Amagai ,  Ichiro Anjoh ,  Junichi Arita ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Darvin Edwards

IPC分类号： H01L23/31 ,  H01L23/495 ,  H01L23/28

CPC分类号： H01L24/06 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L24/05 ,  H01L24/29 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/4866 ,  H01L2224/48799 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/4886 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/85207 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351

摘要： A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.

摘要翻译： 封装的半导体器件具有半导体芯片和在芯片上形成的引线，其间插入有电绝缘膜，以及用于密封芯片和引线的内引线部分的封装材料。 电绝缘膜具有这样的区域：提供不被引线的内引线部分的部分覆盖的周边部分，用于加强电绝缘膜对包装材料和芯片的粘附。 电绝缘膜的厚度基本上在80μm至200μm的范围内，用于吸收当经受环境温度变化时在封装半导体器件中产生的应力。 可以在电绝缘膜和半导体芯片之间形成应力吸收膜，用于吸收当经受环境温度变化时在封装半导体器件中产生的应力。

公开(公告)号：US20050167831A1

公开(公告)日：2005-08-04

申请号：US11092619

申请日：2005-03-30

申请人： Kunihiro Tsubosaki

发明人： Kunihiro Tsubosaki

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L23/12 ,  H01L23/31 ,  H01L23/485 ,  H05K1/02 ,  H05K3/34 ,  H01L23/48

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/0271 ,  H05K3/3436 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.