公开(公告)号：US20160118287A1

公开(公告)日：2016-04-28

申请号：US14525267

申请日：2014-10-28

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Brian M. Erwin ,  Jorge A. Lubguban ,  Eric D. Perfecto ,  Jennifer D. Schuler

IPC: H01L21/683 ,  H01L21/66 ,  B32B7/12 ,  B32B9/04 ,  B32B17/06 ,  H01L21/302 ,  H01L21/268

CPC classification number: H01L21/6835 ,  B32B7/06 ,  B32B7/12 ,  B32B9/04 ,  B32B17/06 ,  B32B2457/14 ,  H01L22/12 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A method for processing a semiconductor wafer where an opaque layer is located on a surface of a handling wafer is used so the surface of the handling wafer may be detected through optical sensors. The opaque layer may be modified, or oriented, to allow light to pass through unobstructed.

Abstract translation: 使用用于处理半导体晶片的方法，其中不透明层位于处理晶片的表面上，因此可以通过光学传感器检测处理晶片的表面。 不透明层可以被修改或取向，以允许光畅通无阻。

公开(公告)号：US09324669B2

公开(公告)日：2016-04-26

申请号：US14484313

申请日：2014-09-12

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Brian M. Erwin ,  Eric D. Perfecto ,  Wolfgang Sauter

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05023 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/10145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1182 ,  H01L2224/11825 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0544 ,  H01L2924/3841 ,  H01L2924/00014

Abstract: A method including forming a copper pillar, electroplating a metal layer on a top surface and a sidewall of the copper pillar, and electroplating a metal cap above the top surface of the copper pillar in direct contact with the metal layer. The method further including forming an intermetallic by heating the metal layer and the copper pillar in a non-reducing environment, the intermetallic including elements of both the copper pillar and the metal layer, where molten solder will wet to the metal cap and will not wet to the intermetallic.

Abstract translation: 一种包括形成铜柱的方法，在铜柱的顶表面和侧壁上电镀金属层，并且在铜柱的顶表面上方与金属层直接接触地电镀金属帽。 该方法还包括通过在非还原环境中加热金属层和铜柱形成金属间化合物，金属间化合物包括铜柱和金属层的元素，其中熔融的焊料将润湿金属帽并且不会湿润 到金属间化合物。

公开(公告)号：US20150337451A1

公开(公告)日：2015-11-26

申请号：US14284932

申请日：2014-05-22

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Eric D. Perfecto

IPC: C25D21/12 ,  C25D17/00

CPC classification number: C25D5/18 ,  C25D17/10 ,  C25D21/12

Abstract: Disclosed are electrodeposition systems and methods wherein at least three electrodes are placed in a container containing a plating solution. The electrodes are connected to a polarity-switching unit and include a first electrode, a second electrode and a third electrode. The polarity-switching unit establishes a constant polarity state between the first and second electrodes in the solution during an active plating mode, wherein the first electrode has a negative polarity and the second electrode has a positive polarity, thereby allowing a plated layer to form on a workpiece at the first electrode. The polarity-switching unit further establishes an oscillating polarity state between the second and third electrodes during a non-plating mode (i.e., when the first electrode is removed from the plating solution), wherein the second electrode and the third electrode have opposite polarities that switch at regular, relatively fast, intervals, thereby limiting degradation of the second electrode and/or the plating solution.

Abstract translation: 公开了电沉积系统和方法，其中至少三个电极放置在容纳电镀液的容器中。 电极连接到极性切换单元，并且包括第一电极，第二电极和第三电极。 极性切换单元在有源电镀模式期间在溶液中的第一和第二电极之间建立恒定的极性状态，其中第一电极具有负极性，并且第二电极具有正极性，从而允许电镀层形成 第一电极处的工件。 极性切换单元进一步在非电镀模式（即，当第一电极从电镀溶液中除去时）在第二和第三电极之间建立振荡极性状态，其中第二电极和第三电极具有相反的极性， 以规则，相对较快的间隔切换，从而限制第二电极和/或电镀液的劣化。

公开(公告)号：US09142501B2

公开(公告)日：2015-09-22

申请号：US14447908

申请日：2014-07-31

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Minhua Lu ,  Eric D. Perfecto ,  David J. Russell ,  Wolfgang Sauter ,  Krystyna Semkow ,  Thomas A. Wassick

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L23/498 ,  H01L21/768 ,  H05K1/09 ,  H05K3/40 ,  H05K3/34

CPC classification number: H01L23/49816 ,  H01L21/76843 ,  H01L21/76885 ,  H01L23/49866 ,  H01L2224/11 ,  H05K1/09 ,  H05K3/3478 ,  H05K3/4007 ,  H05K2201/0338 ,  H05K2201/0341 ,  H05K2201/0344 ,  H05K2201/09745 ,  H05K2203/041

Abstract: An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.

Abstract translation: 一种互连结构，其包括其中存在电气部件的基板以及与接触焊盘接触的凸起下冶金（UBM）堆叠，所述凸块冶金（UBM）堆叠存在于所述基板中的所述电气部件。 UBM堆叠包括与接触焊盘直接接触电气部件的金属粘合层，与金属粘附层层直接接触的铜（Cu）种子层，第一镍（Ni）阻挡层， 存在于铜（Cu）种子层的直接接触中，以及存在于第一镍（Ni）阻挡层上的至少一个铜（Cu）导体层和至少一个第二镍（Ni）阻挡层的层状结构。 第二镍（Ni）阻挡层上可能存在焊球。

公开(公告)号：US20150235979A1

公开(公告)日：2015-08-20

申请号：US14181616

申请日：2014-02-14

Applicant: International Business Machines Corporation

Inventor： Brian M. Erwin ,  Eric D. Perfecto ,  Nicholas A. Polomoff ,  Jae-Woong Nah

IPC: H01L23/00 ,  H01L23/16

CPC classification number: H01L24/17 ,  H01L21/561 ,  H01L21/563 ,  H01L24/05 ,  H01L24/11 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/04026 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13005 ,  H01L2224/13147 ,  H01L2224/2732 ,  H01L2224/27416 ,  H01L2224/27418 ,  H01L2224/27515 ,  H01L2224/27632 ,  H01L2224/2784 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29076 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29388 ,  H01L2224/32147 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/83885 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/0665 ,  H01L2224/81805 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/27

Abstract: Electronic devices including solder bumps embedded in a pre-applied coating of underfill material and/or solder resist are fabricated, thereby improving chip-package interaction reliability. Underfill can be directly applied to a wafer, enabling increased filler loadings. Passages formed in the underfill and/or solder resist coating expose electrically conductive pads or metal pillars. Such passages can be filled with molten solder to form the solder bumps.

Abstract translation: 制造包括嵌入在预填充材料和/或阻焊剂的预涂层中的焊料凸块的电子器件，从而提高芯片封装相互作用的可靠性。 底部填充物可以直接施加到晶片上，从而增加填料的填充量。 在底部填充物和/或阻焊涂层中形成的通道暴露导电垫或金属柱。 可以用熔融焊料填充这样的通道以形成焊料凸块。

公开(公告)号：US09084378B2

公开(公告)日：2015-07-14

申请号：US13829242

申请日：2013-03-14

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Minhua Lu ,  Eric D. Perfecto ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H05K3/40 ,  H01L23/31 ,  H05K3/34 ,  H01L23/00

CPC classification number: H05K3/4007 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/12042 ,  H01L2924/3656 ,  H05K3/3463 ,  H05K2201/0338 ,  H05K2201/09745 ,  H05K2203/041 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/207 ,  H01L2924/01074 ,  H01L2924/00

Abstract: An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.

Abstract translation: 一种互连结构，其包括其中存在电气部件的基板以及与接触焊盘接触的凸起下冶金（UBM）堆叠，所述凸块冶金（UBM）堆叠存在于所述基板中的所述电气部件。 UBM堆叠包括与接触焊盘直接接触电气部件的金属粘附层，与金属粘附层直接接触的铜（Cu）种子层，存在的第一镍（Ni）阻挡层 与铜（Cu）种子层直接接触，以及存在于第一镍（Ni）阻挡层上的至少一个铜（Cu）导体层和至少一个第二镍（Ni）阻挡层的层状结构。 第二镍（Ni）阻挡层上可能存在焊球。

公开(公告)号：US08937009B2

公开(公告)日：2015-01-20

申请号：US13870026

申请日：2013-04-25

Applicant: International Business Machines Corporation

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Karen P. McLaughlin ,  Ekta Misra ,  Christopher D. Muzzy ,  Eric D. Perfecto ,  Wolfgang Sauter

IPC: H01L21/768 ,  H01L21/44 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L22/34 ,  H01L23/3192 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/03622 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05558 ,  H01L2224/05568 ,  H01L2224/05583 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/11462 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/11914 ,  H01L2224/13023 ,  H01L2224/13026 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13147 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed are a method for metallization during semiconductor wafer processing and the resulting structures. In this method, a passivation layer is patterned with first openings aligned above and extending vertically to metal structures below. A mask layer is formed and patterned with second openings aligned above the first openings, thereby forming two-tier openings extending vertically through the mask layer and passivation layer to the metal structures below. An electrodeposition process forms, in the two-tier openings, both under-bump pad(s) and additional metal feature(s), which are different from the under-bump pad(s) (e.g., a wirebond pad; a final vertical section of a crackstop structure; and/or a probe pad). Each under-bump pad and additional metal feature initially comprises copper with metal cap layers thereon. The mask layer is removed, an additional mask layer is formed and patterned with third opening(s) exposing only the under-bump pad(s) and solder material is deposited on the under-bump pad(s).

Abstract translation: 公开了半导体晶片处理期间的金属化方法和所得到的结构。 在该方法中，钝化层被图案化，其中第一开口在上方对齐并垂直延伸到下面的金属结构。 形成掩模层并用第一开口对准的第二开口进行图案化，从而形成垂直延伸穿过掩模层和钝化层到下面的金属结构的两层开口。 电沉积工艺在双层开口中形成凸点下焊盘和附加的金属部件，其不同于凸块下焊盘（例如，引线焊盘;最终垂直的） 裂缝结构部分和/或探针垫）。 每个凸点下焊盘和附加的金属特征最初包括铜上的金属盖层。 去除掩模层，形成另外的掩模层并用仅暴露凸块下焊盘的第三开口图案化，并且焊料材料沉积在凸块下焊盘上。

公开(公告)号：US20140262458A1

公开(公告)日：2014-09-18

申请号：US13829242

申请日：2013-03-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Charles L. Arvin ,  Minhua Lu ,  Eric D. Perfecto ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H05K3/10 ,  H05K1/09

CPC classification number: H05K3/4007 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/12042 ,  H01L2924/3656 ,  H05K3/3463 ,  H05K2201/0338 ,  H05K2201/09745 ,  H05K2203/041 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/207 ,  H01L2924/01074 ,  H01L2924/00

Abstract: An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.

Abstract translation: 一种互连结构，其包括其中存在电气部件的基板以及与接触焊盘接触的凸起下冶金（UBM）堆叠，所述凸块冶金（UBM）堆叠存在于所述基板中的所述电气部件。 UBM堆叠包括与接触焊盘直接接触电气部件的金属粘附层，与金属粘附层直接接触的铜（Cu）种子层，存在的第一镍（Ni）阻挡层 与铜（Cu）种子层直接接触，以及存在于第一镍（Ni）阻挡层上的至少一个铜（Cu）导体层和至少一个第二镍（Ni）阻挡层的层状结构。 第二镍（Ni）阻挡层上可能存在焊球。

公开(公告)号：US20130284495A1

公开(公告)日：2013-10-31

申请号：US13932070

申请日：2013-07-01

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Alexandre Blander ,  Peter J. Brofman ,  Donald W. Henderson ,  Gareth G. Hougham ,  Hsichang Liu ,  Eric D. Perfecto ,  Srinivasa S.N. Reddy ,  Krystyna W. Semkow ,  Kamalesh K. Srivastava ,  Brian R. Sundlof ,  Julien Sylvestre ,  Renee L. Weisman

IPC: H01B1/02 ,  H01B13/00

CPC classification number: H01B1/02 ,  B23K35/0244 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3602 ,  B82Y30/00 ,  C22C13/00 ,  H01B13/00 ,  H01L23/49866 ,  H01L2924/0002 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0209 ,  H05K2201/0257 ,  Y10T29/49117 ,  H01L2924/00

Abstract: In one embodiment of the present invention, inert nano-sized particles having dimensions from 1 nm to 1,000 nm are added into a solder ball. The inert nano-sized particles may comprise metal oxides, metal nitrides, metal carbides, metal borides, etc. The inert nano-sized particles may be a single compound, or may be a metallic material having a coating of a different material. In another embodiment of the present invention, a small quantity of at least one elemental metal that forms stable high melting intermetallic compound with tin is added to a solder ball. The added at least one elemental metal forms precipitates of intermetallic compounds with tin, which are dispersed as fine particles in the solder.

Abstract translation: 在本发明的一个实施方案中，将尺寸为1nm至1000nm的惰性纳米尺寸颗粒加入到焊球中。 惰性纳米尺寸颗粒可以包括金属氧化物，金属氮化物，金属碳化物，金属硼化物等。惰性纳米尺寸颗粒可以是单一化合物，或者可以是具有不同材料的涂层的金属材料。 在本发明的另一个实施方案中，将少量与锡形成稳定的高熔点金属间化合物的元素金属添加到焊料球中。 添加的至少一种元素金属与锡形成金属间化合物的沉淀物，其作为细颗粒分散在焊料中。

公开(公告)号：US20160079193A1

公开(公告)日：2016-03-17

申请号：US14484313

申请日：2014-09-12

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Brian M. Erwin ,  Eric D. Perfecto ,  Wolfgang Sauter

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05023 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/10145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1182 ,  H01L2224/11825 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0544 ,  H01L2924/3841 ,  H01L2924/00014

Abstract: A method including forming a copper pillar, electroplating a metal layer on a top surface and a sidewall of the copper pillar, and electroplating a metal cap above the top surface of the copper pillar in direct contact with the metal layer. The method further including forming an intermetallic by heating the metal layer and the copper pillar in a non-reducing environment, the intermetallic including elements of both the copper pillar and the metal layer, where molten solder will wet to the metal cap and will not wet to the intermetallic.

Abstract translation: 一种包括形成铜柱的方法，在铜柱的顶表面和侧壁上电镀金属层，并且在铜柱的顶表面上方与金属层直接接触地电镀金属帽。 该方法还包括通过在非还原环境中加热金属层和铜柱形成金属间化合物，金属间化合物包括铜柱和金属层的元素，其中熔融的焊料将润湿金属帽并且不会湿润 到金属间化合物。