公开(公告)号：US20130056862A1

公开(公告)日：2013-03-07

申请号：US13226767

申请日：2011-09-07

申请人： OhHan Kim ,  WonJun Ko ,  DaeSik Choi

发明人： OhHan Kim ,  WonJun Ko ,  DaeSik Choi

IPC分类号： H01L23/495 ,  H01L21/50

CPC分类号： H01L23/147 ,  H01L21/561 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/73 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/29139 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/83191 ,  H01L2224/92225 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/05432 ,  H01L2924/0665

摘要： A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.

摘要翻译： 半导体器件具有包括凹部的基板和具有通孔的周边部分。 第一半导体管芯安装在衬底上并在凹槽内。 平面散热器安装在衬底上并在第一半导体管芯上方。 平面散热器具有围绕平面散热器的中心部分的开口并且在衬底的周边部分上对齐。 第二半导体管芯安装在平面散热器的中心部分上。 第三半导体管芯安装在第二半导体管芯上。 第一和第二多个接合线分别从第二和第三半导体管芯延伸穿过平面散热器中的开口，以电连接到通孔。 密封剂沉积在衬底上并且围绕平面散热器。

公开(公告)号：US10163744B2

公开(公告)日：2018-12-25

申请号：US13226767

申请日：2011-09-07

申请人： OhHan Kim ,  WonJun Ko ,  DaeSik Choi

发明人： OhHan Kim ,  WonJun Ko ,  DaeSik Choi

IPC分类号： H01L23/14 ,  H01L23/00 ,  H01L25/065 ,  H01L23/495 ,  H01L21/56 ,  H01L23/552 ,  H01L23/31 ,  H01L25/10 ,  H01L23/13 ,  H01L23/367 ,  H01L23/36 ,  H01L23/498

摘要： A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.

公开(公告)号：US09252032B2

公开(公告)日：2016-02-02

申请号：US13566872

申请日：2012-08-03

申请人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

发明人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L25/16 ,  H01L23/00 ,  H01L21/683

CPC分类号： H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06182 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/221 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/14364 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

摘要翻译： 半导体晶片包含多个第一半导体管芯。 半导体晶片安装在载体上。 通过半导体晶片形成通道以分离第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 密封剂沉积在载体和第一半导体管芯上并进入沟道，同时第二半导体管芯的侧部和表面部分保持暴露于密封剂。 通过通道中的密封剂形成第一导电通孔。 第二导电通孔在第一半导体管芯的接触焊盘上穿过密封剂形成。 在第一和第二导电通孔之间的密封剂之上形成导电层。 在导电层和密封剂之上形成绝缘层。 载体被移除。 互连结构形成在第一导电通孔上。

公开(公告)号：US08263435B2

公开(公告)日：2012-09-11

申请号：US12914895

申请日：2010-10-28

申请人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

发明人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06182 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/221 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/14364 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

摘要翻译： 半导体晶片包含多个第一半导体管芯。 半导体晶片安装在载体上。 通过半导体晶片形成通道以分离第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 密封剂沉积在载体和第一半导体管芯上并进入沟道，同时第二半导体管芯的侧部和表面部分保持暴露于密封剂。 通过通道中的密封剂形成第一导电通孔。 第二导电通孔在第一半导体管芯的接触焊盘上穿过密封剂形成。 在第一和第二导电通孔之间的密封剂之上形成导电层。 在导电层和密封剂之上形成绝缘层。 载体被移除。 互连结构形成在第一导电通孔上。

公开(公告)号：US20120299174A1

公开(公告)日：2012-11-29

申请号：US13566872

申请日：2012-08-03

申请人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

发明人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

IPC分类号： H01L23/52 ,  H01L23/34

CPC分类号： H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06182 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/221 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/14364 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

摘要翻译： 半导体晶片包含多个第一半导体管芯。 半导体晶片安装在载体上。 通过半导体晶片形成通道以分离第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 密封剂沉积在载体和第一半导体管芯上并进入沟道，同时第二半导体管芯的侧部和表面部分保持暴露于密封剂。 通过通道中的密封剂形成第一导电通孔。 第二导电通孔在第一半导体管芯的接触焊盘上穿过密封剂形成。 在第一和第二导电通孔之间的密封剂之上形成导电层。 在导电层和密封剂之上形成绝缘层。 载体被移除。 互连结构形成在第一导电通孔上。

公开(公告)号：US20120104624A1

公开(公告)日：2012-05-03

申请号：US12914895

申请日：2010-10-28

申请人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

发明人： DaeSik Choi ,  WonJun Ko ,  JaEun Yun

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/565 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/02371 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06182 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/221 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/14364 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

摘要翻译： 半导体晶片包含多个第一半导体管芯。 半导体晶片安装在载体上。 通过半导体晶片形成通道以分离第一半导体管芯。 第二半导体管芯安装到第一半导体管芯。 密封剂沉积在载体和第一半导体管芯上并进入沟道，同时第二半导体管芯的侧部和表面部分保持暴露于密封剂。 通过通道中的密封剂形成第一导电通孔。 第二导电通孔在第一半导体管芯的接触焊盘上穿过密封剂形成。 在第一和第二导电通孔之间的密封剂之上形成导电层。 在导电层和密封剂之上形成绝缘层。 载体被移除。 互连结构形成在第一导电通孔上。

公开(公告)号：US20130049188A1

公开(公告)日：2013-02-28

申请号：US13218388

申请日：2011-08-25

申请人： DaeSik Choi ,  OhHan Kim ,  MinWook Yu

发明人： DaeSik Choi ,  OhHan Kim ,  MinWook Yu

IPC分类号： H01L23/34 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/36 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor die mounted to a substrate. The semiconductor die and substrate are disposed within a mold chase with a releasing layer disposed over the semiconductor die. A MUF material is deposited around the semiconductor die, releasing layer, and substrate through an opening in the mold chase. The opening in the mold chase is located in an upper mold support of the mold chase. A recess is formed in the MUF material by removing the releasing layer. A TIM is formed in the recess of the MUF material. The TIM is substantially coplanar with the MUF material. A heat spreader is formed over the TIM material. The heat spreader can be formed within the recess of the MUF material over the TIM. A plurality of bumps is formed over a surface of the substrate opposite the semiconductor die.

摘要翻译： 半导体器件具有安装在基板上的半导体管芯。 半导体管芯和衬底被布置在具有设置在半导体管芯上方的释放层的模具追逐之内。 MUF材料通过模具追逐中的开口沉积在半导体管芯，释放层和衬底周围。 模具追逐中的开口位于模具追逐的上模支架中。 通过除去释放层，在MUF材料中形成凹部。 在MUF材料的凹槽中形成TIM。 TIM与MUF材料基本上共面。 在TIM材料上形成散热器。 散热器可以在TIM上的MUF材料的凹槽内形成。 在与半导体管芯相对的基板的表面上形成多个凸块。

公开(公告)号：US08273604B2

公开(公告)日：2012-09-25

申请号：US13032536

申请日：2011-02-22

申请人： OhHan Kim ,  SungWon Cho ,  DaeSik Choi ,  KyuWon Lee ,  DongSoo Moo

发明人： OhHan Kim ,  SungWon Cho ,  DaeSik Choi ,  KyuWon Lee ,  DongSoo Moo

IPC分类号： H01L21/00

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/96 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/24145 ,  H01L2224/24146 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2224/82 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03

摘要： A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars.

摘要翻译： 半导体器件可以包括载体衬底和设置在载体衬底的表面上的第一半导体管芯。 密封剂可以设置在第一半导体管芯和载体衬底之上。 半导体器件可以包括通过密封剂设置的第一通孔以及通过密封剂设置的第二通孔，以暴露第一接触焊盘。 第一接触垫位于第一半导体管芯的上表面上。 半导体器件可以包括填充第一通孔的导电柱和填充第二通孔的第一导电金属通孔（CMV）。 导电柱可以包括第一导电材料，并且第一CMV可以与第一接触垫接触。 半导体器件可以包括设置在密封剂上的导电层。 导电层可以将第一CMV之一与导电柱之一电连接。

公开(公告)号：US08519544B2

公开(公告)日：2013-08-27

申请号：US13570979

申请日：2012-08-09

申请人： OhHan Kim ,  SungWon Cho ,  DaeSik Choi ,  KyuWon Lee ,  DongSoo Moo

发明人： OhHan Kim ,  SungWon Cho ,  DaeSik Choi ,  KyuWon Lee ,  DongSoo Moo

IPC分类号： H01L23/48

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/82 ,  H01L24/96 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/24145 ,  H01L2224/24146 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2224/82 ,  H01L2924/00014 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03

摘要： A semiconductor device can include a carrier substrate, and a first semiconductor die disposed on a surface of the carrier substrate. An encapsulant can be disposed over the first semiconductor die and the carrier substrate. The semiconductor device can include first vias disposed through the encapsulant as well as second vias disposed through the encapsulant to expose first contact pads. The first contact pads are on upper surfaces of the first semiconductor die. The semiconductor device can include conductive pillars that fill the first vias, and first conductive metal vias (CMVs) that fill the second vias. The conductive pillar can include a first conductive material, and the first CMVs can be in contact with the first contact pads. The semiconductor device can include a conductive layer disposed over the encapsulant. The conductive layer can electrically connect one of the first CMVs with one of the conductive pillars.

摘要翻译： 半导体器件可以包括载体衬底和设置在载体衬底的表面上的第一半导体管芯。 密封剂可以设置在第一半导体管芯和载体衬底之上。 半导体器件可以包括通过密封剂设置的第一通孔以及通过密封剂设置的第二通孔，以暴露第一接触焊盘。 第一接触垫位于第一半导体管芯的上表面上。 半导体器件可以包括填充第一通孔的导电柱和填充第二通孔的第一导电金属通孔（CMV）。 导电柱可以包括第一导电材料，并且第一CMV可以与第一接触垫接触。 半导体器件可以包括设置在密封剂上的导电层。 导电层可以将第一CMV之一与导电柱之一电连接。

公开(公告)号：US08409979B2

公开(公告)日：2013-04-02

申请号：US13149669

申请日：2011-05-31

申请人： DaeSik Choi ,  OhHan Kim ,  SungWon Cho

发明人： DaeSik Choi ,  OhHan Kim ,  SungWon Cho

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/498

CPC分类号： H01L23/522 ,  H01L21/565 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/82 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11831 ,  H01L2224/11903 ,  H01L2224/11906 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13019 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/00

摘要： A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.

摘要翻译： 半导体器件具有衬底和形成在衬底上的第一导电焊盘。 通过在第一导电焊盘中形成多个凹槽来扩展第一导电焊盘的互连表面积。 凹槽可以是同心环的布置，圆形凹槽的布置或平行的线性沟槽的布置。 或者，通过在第一导电焊盘上形成第二导电焊盘来扩展第一导电焊盘的互连表面积。 半导体管芯具有形成在半导体管芯的表面上的多个互连结构。 半导体管芯安装到衬底上，互连结构接触第一导电焊盘的扩展互连表面区域，以增加互连结构与第一导电焊盘的接合强度。 模具底部填充材料沉积在半导体管芯和衬底之间。