公开(公告)号：US09543235B2

公开(公告)日：2017-01-10

申请号：US14875672

申请日：2015-10-05

申请人： Amkor Technology, Inc.

发明人： Hyung Il Jeon ,  Ji Young Chung ,  Byong Jin Kim ,  In Bae Park ,  Jae Min Bae ,  No Sun Park

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49503 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49572 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/16013 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00014

摘要： In one embodiment, an electronic package structure includes a lead having a first width. An electronic chip having a conductive bump on a major surface, the conductive bump has a second width greater than the first width. The conductive bump is attached to the lead such that a portion of the conductive bump extends to at least partially surround a side surface of the lead. A molding compound resin encapsulates the electronic chip, the conductive bump, and at least a portion of the lead. The lead is configured so strengthen the joining force between the lead and conductive bump.

摘要翻译： 在一个实施例中，电子封装结构包括具有第一宽度的引线。 一种在主表面上具有导电凸块的电子芯片，所述导电凸块具有大于所述第一宽度的第二宽度。 导电凸块附接到引线，使得导电凸块的一部分延伸到至少部分地围绕引线的侧表面。 模塑复合树脂封装电子芯片，导电凸块和引线的至少一部分。 引线被配置为加强引线和导电凸块之间的接合力。

公开(公告)号：US20150325538A1

公开(公告)日：2015-11-12

申请号：US14699411

申请日：2015-04-29

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Kazuya ASAOKA ,  Norio FUJITSUKA ,  Takashi OZAKI ,  Kenichi AO

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L21/302

CPC分类号： H01L23/564 ,  B81C1/00238 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L21/302 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0311 ,  H01L2224/0331 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/08111 ,  H01L2224/08146 ,  H01L2224/10145 ,  H01L2224/10175 ,  H01L2224/13021 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29021 ,  H01L2224/291 ,  H01L2224/29138 ,  H01L2224/30131 ,  H01L2224/30135 ,  H01L2224/30136 ,  H01L2224/30177 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32147 ,  H01L2224/32148 ,  H01L2224/73103 ,  H01L2224/73204 ,  H01L2224/80001 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81365 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2924/163 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2224/83 ,  H01L2924/00

摘要： The method for producing a semiconductor device includes: forming an opening in an area of at least one of the complementary metal-oxide semiconductor wafer that includes a first part and the other semiconductor wafer that includes a second part, the opening terminating within the area and not penetrating through the area, the area including corresponding one of the first part and the second part and an outer peripheral part of the corresponding one of the first part and the second part; forming a conduction hole within the first part, the conduction hole communicating with a metallic material in the complementary metal-oxide semiconductor wafer; arranging a first joining material inside the conduction hole and on the first part, and a second joining material on the second part; and joining the arranged first joining material and the arranged second joining material.

摘要翻译： 制造半导体器件的方法包括：在包括第一部分的互补金属氧化物半导体晶片中的至少一个区域和包括第二部分的另一个半导体晶片的区域中形成开口，该开口终止于该区域内， 所述区域不包括所述区域，所述区域包括所述第一部分和所述第二部分中的相应一个和所述第一部分和所述第二部分中的相应一个的外周部分; 在所述第一部分内形成导通孔，所述导电孔与所述互补金属氧化物半导体晶片中的金属材料连通; 在所述导通孔和所述第一部分内布置第一接合材料，以及在所述第二部分上布置第二接合材料; 并且将所述布置的第一接合材料和所述布置的第二接合材料接合。

公开(公告)号：US20140197540A1

公开(公告)日：2014-07-17

申请号：US14214120

申请日：2014-03-14

申请人： STATS ChipPAC, Ltd.

发明人： Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L23/00

CPC分类号： H01L24/97 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/498 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/96 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/20 ,  H01L2224/96 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

摘要： A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

摘要翻译： 半导体器件首先通过锯切街道引导件提供晶片，并且具有形成在晶片的有效表面上的接合焊盘。 晶片用切割胶带胶带。 将晶片沿着锯条导轨分割为具有在多个模具中的每一个之间具有多个间隙的多个模具。 切割带被拉伸以将多个间隙扩展到预定距离。 有机材料沉积在多个间隙中的每一个中。 有机材料的顶表面与多个管芯的第一管芯的顶表面基本共面。 重分布层在有机材料的一部分上被图案化。 凹凸金属化（UBM）通过再分配层与接合焊盘电连接在有机材料上沉积。

公开(公告)号：US20140124877A1

公开(公告)日：2014-05-08

申请号：US13764261

申请日：2013-02-11

申请人： QUALCOMM INCORPORATED

发明人： Yangyang Sun ,  Lily Zhao ,  Michael Han

IPC分类号： H01L29/43 ,  H01L29/84 ,  H01L21/768 ,  H01L23/498

CPC分类号： H01L29/43 ,  B81B2207/093 ,  B81C1/00269 ,  B81C2203/019 ,  H01L21/768 ,  H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L29/84 ,  H01L2224/02166 ,  H01L2224/03019 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/10126 ,  H01L2224/11019 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/1183 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13138 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13163 ,  H01L2224/13565 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/05442 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/01034 ,  H01L2924/0109 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A conductive interconnect includes an inorganic collar. The conductive interconnect includes a conductive support layer. The conductive interconnect also includes a conductive material on the conductive support layer. The conductive interconnect further includes an inorganic collar partially surrounding the conductive material. The inorganic collar is also disposed on sidewalls of the conductive support layer.

摘要翻译： 导电互连包括无机套环。 导电互连包括导电支撑层。 导电互连件还包括在导电支撑层上的导电材料。 导电互连还包括部分地围绕导电材料的无机套管。 无机套环也设置在导电支撑层的侧壁上。

公开(公告)号：US20080272368A1

公开(公告)日：2008-11-06

申请号：US11744743

申请日：2007-05-04

申请人： Byung Tai DO ,  Heap Hoe KUAN

发明人： Byung Tai DO ,  Heap Hoe KUAN

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： H01L24/97 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/498 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/96 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/20 ,  H01L2224/96 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

摘要： A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

摘要翻译： 半导体器件首先通过锯切街道引导件提供晶片，并且具有形成在晶片的有效表面上的接合焊盘。 晶片用切割胶带胶带。 将晶片沿着锯条导轨分割为具有在多个模具中的每一个之间具有多个间隙的多个模具。 切割带被拉伸以将多个间隙扩展到预定距离。 有机材料沉积在多个间隙中的每一个中。 有机材料的顶表面与多个管芯的第一管芯的顶表面基本共面。 重分布层在有机材料的一部分上被图案化。 凹凸金属化（UBM）通过再分配层与接合焊盘电连接在有机材料上沉积。

公开(公告)号：US20230154885A1

公开(公告)日：2023-05-18

申请号：US18049428

申请日：2022-10-25

申请人： Samsung Electronics Co., Ltd.

发明人： Jinyoung Kim ,  Jiyeong Kim ,  Okseon Yoon

IPC分类号： H01L23/00 ,  H01L25/18 ,  H01L25/00 ,  H01L21/56 ,  H01L23/29

CPC分类号： H01L24/73 ,  H01L21/563 ,  H01L23/295 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L25/18 ,  H01L25/50 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0567 ,  H01L2224/0568 ,  H01L2224/1317 ,  H01L2224/1318 ,  H01L2224/2929 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05617 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05649 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05681 ,  H01L2224/05683 ,  H01L2224/05684 ,  H01L2224/05686 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13117 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13138 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/13163 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/13186 ,  H01L2224/16146 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/73204

摘要： A semiconductor package includes a first semiconductor chip on a lower structure. A first underfill is between the first semiconductor chip and the lower structure. The first underfill includes a first portion adjacent to a center region of the first semiconductor chip, and a second portion adjacent to an edge region of the first semiconductor chip. The second portion has a higher degree of cure than the first portion. A plurality of inner connection terminals is between the first semiconductor chip and the lower structure. The plurality of inner connection terminals extends in the first underfill.

公开(公告)号：US09524938B2

公开(公告)日：2016-12-20

申请号：US13845409

申请日：2013-03-18

申请人： STATS ChipPAC, Ltd.

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Seng Guan Chow

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/538 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31

CPC分类号： H01L23/5384 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68372 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a first die having top, bottom, and peripheral surfaces. A bond pad is formed over the top surface. An organic material is connected to the first die and disposed around the peripheral surface. A via hole is formed in the organic material. A metal trace connects the via hole to the bond pad. A conductive material is deposited in the via hole. A redistribution layer (RDL) has an interconnection pad disposed over the top surface of the first die.

公开(公告)号：US09406647B2

公开(公告)日：2016-08-02

申请号：US14214120

申请日：2014-03-14

申请人： STATS ChipPAC, Ltd.

发明人： Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L24/97 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/498 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/96 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/20 ,  H01L2224/96 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

摘要： A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.

摘要翻译： 半导体器件首先通过锯切街道引导件提供晶片，并且具有形成在晶片的有效表面上的接合焊盘。 晶片用切割胶带胶带。 将晶片沿着锯条导轨分割为具有在多个模具中的每一个之间具有多个间隙的多个模具。 切割带被拉伸以将多个间隙扩展到预定距离。 有机材料沉积在多个间隙中的每一个中。 有机材料的顶表面与多个管芯的第一管芯的顶表面基本共面。 重分布层在有机材料的一部分上被图案化。 凹凸金属化（UBM）通过再分配层与接合焊盘电连接在有机材料上沉积。

公开(公告)号：US09184064B1

公开(公告)日：2015-11-10

申请号：US14568977

申请日：2014-12-12

申请人： Triton Microtechnologies

发明人： Tim Mobley ,  Roupen Leon Keusseyan ,  Charles Tucker

IPC分类号： H01L21/48 ,  C23C18/16 ,  C23C18/32 ,  C23C28/02 ,  C23C2/04 ,  H01L23/538 ,  H01L23/15

CPC分类号： H01L21/486 ,  C23C2/04 ,  C23C18/165 ,  C23C18/32 ,  C23C28/023 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4867 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13124 ,  H01L2224/13138 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2224/0401 ,  H01L2224/11009 ,  H01L2224/45099 ,  H01L2924/01014

摘要： A method for backside metallization and reinforcement of glass substrates to provide support and protection during handling and processing of the glass substrates. Through-holes are created in a glass substrate and filled with a conductive type material. Backside metallized pads are applied to the glass substrate and enclosed with an under-bump metallization (UBM) pad. A sacrificial substrate is removeably attached to the glass substrate. The sacrificial substrate comprises a sacrificial layer, an opaque film, and an adhesive. The sacrificial substrate protects the backside metallized pads and under-bump metallization (UBM) pads, and reinforces the glass substrate.

摘要翻译： 一种用于玻璃基板的背面金属化和增强的方法，以在玻璃基板的处理和加工期间提供支撑和保护。 在玻璃基板中形成通孔，并填充导电型材料。 将背面金属化焊盘施加到玻璃基板并用凸块下金属化（UBM）焊盘封闭。 牺牲基板可移除地附接到玻璃基板。 牺牲衬底包括牺牲层，不透明膜和粘合剂。 牺牲衬底保护背面金属化焊盘和凸块下金属化（UBM）焊盘，并加强玻璃衬底。

公开(公告)号：US20150115422A1

公开(公告)日：2015-04-30

申请号：US14521417

申请日：2014-10-22

申请人： Amkor Technology, Inc.

发明人： Hyung Il Jeon ,  Ji Young Chung ,  Byong Jin Kim ,  In Bae Park ,  Jae Min Bae ,  No Sun Park

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49503 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49572 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/1134 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13138 ,  H01L2224/13147 ,  H01L2224/16013 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00014

摘要： In one embodiment, an electronic package structure includes a lead having a first width. An electronic chip having a conductive bump on a major surface, the conductive bump has a second width greater than the first width. The conductive bump is attached to the lead such that a portion of the conductive bump extends to at least partially surround a side surface of the lead. A molding compound resin encapsulates the electronic chip, the conductive bump, and at least a portion of the lead. The lead is configured so strengthen the joining force between the lead and conductive bump.

摘要翻译： 在一个实施例中，电子封装结构包括具有第一宽度的引线。 一种在主表面上具有导电凸块的电子芯片，所述导电凸块具有大于所述第一宽度的第二宽度。 导电凸块附接到引线，使得导电凸块的一部分延伸到至少部分地围绕引线的侧表面。 模塑复合树脂封装电子芯片，导电凸块和引线的至少一部分。 引线被配置为加强引线和导电凸块之间的接合力。