Abstract:
A method for making a semiconductor device (100) includes forming rims (108) on first and second dice (104, 106). The rims (108) extend laterally away from the first and second dice (104, 106). The second die (106) is stacked over the first die (104), and one or more vias (112) are drilled through the rims (108) after stacking. The semiconductor device (100) includes redistribution layers (202) extending over at least one of the respective first and second dice (104, 106) and the corresponding rims (108). The one or more vias (112) extend through the corresponding rims(108), and the one or more vias (112) are in communication with the first and second dice (104, 106) through the rims (108).
Abstract:
An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.
Abstract:
This publication discloses an electronics module and a method for manufacturing it. The electronics module includes at least one component (6) embedded in an insulating-material layer (1), which has a first contacting surface, in which there are first contact terminals (7), from which the component (6) is connected electrically to the conductor structures contained in the electronics module. In addition, the component (6) has a second contacting surface opposite to the first contacting surface, in which there is at least one second contact terminal (7’), from which the component (6) is connected electrically to the conductor structures contained in the electronics module. With the aid of the invention, it is possible to achieve an electronic-module construction that saves space compared to the prior art.
Abstract:
A semiconductor device includes a semiconductor constituent provided with a semiconductor substrate and a plurality of electrodes for external connection (13) provided under the semiconductor substrate. A lower-layer insulating film (1) is provided under and around the semiconductor constituent. A plurality of lower-layer wirings (22, 22A) are electrically connected to the electrodes for external connection of the semiconductor constituent, and provided under the lower-layer insulating film. An insulation layer (31) is provided on the lower-layer insulating film in the periphery of the semiconductor constituent. An upper-layer insulating film (32) is provided on the semiconductor constituent and the insulation layer. A plurality of upper-layer wirings (33, 33A) are provided on the upper-layer insulating film. A base plate (51) on which the semiconductor constituent and the insulation layer are mounted is removed.
Abstract:
A multiple wiring layer interconnection element (100) includes capacitors (110) or other electrical components embedded between a first exposed wiring layer (120) and a second exposed wiring layer (122) of the interconnection element (100). Internal wiring layers (124) and (126) are provided between exposed surfaces (112) of the respective capacitors (110), the internal wiring layers being electrically insulated from the capacitors (110) by dielectric layers (114) and (116), respectively. The internal wiring layers (124), (126) are isolated from each other by an internal dielectric layer (130). Conductive vias (132) provide conductive interconnection between the two internal wiring layers (124, 126). A method of fabricating a multiple wiring layer interconnection element is also provided.
Abstract:
Die vorliegende Erfindung betrifft ein Verfahren zum Kontaktieren mindestens einer elektrischen Kontaktfläche (1) auf einer Oberfläche eines Substrats (2) und/oder mindestens eines auf dem Substrat (2) angeordneten Bauelementes (3), insbesondere Halbleiterchips, mit den Schritten: - Auflaminieren mindestens einer Isolierfolie (4) aus elektrisch isolierendem Kunststoffmaterial auf die die Kontaktfläche (1) aufweisenden Oberflächen des Substrats (2) und des Bauelements unter Vakuum, - Freilegen der zu kontaktierenden Kontaktfläche (1) auf den Oberflächen durch Öffnen eines Fensters (6) in der Isolierfolie (4). Die vorliegende Erfindung zeichnet sich durch - flächiges Ankontaktieren der freigelegten Kontaktfläche (1) mit mindestens einer Metallisierung (5) auf einer Isolierfolie (4).
Abstract:
This publication discloses an electronic module and a method for manufacturing an electronic module, in which a component (6) is glued (5) to the surface of a conductive layer, from which conductive layer conductive patterns (14) are later formed. A conductive adhesive, preferably an anisotropically conductive adhesive, is used in the gluing. After gluing the component (6), an insulating-material layer (1), which surrounds the component (6) attached to the conductive layer, is formed on, or attached to the surface of the conductive layer. After this, conductive patterns (14) are made from the conductive layer, to the surface of which the component (6) is glued.
Abstract:
An electronics package includes an insulating substrate (106), a first electrical component (104) coupled to a first surface of the insulating substrate, and a first conductor layer (108) formed on the first surface of the insulating substrate. A second conductor layer (128) is formed on a second surface of the insulating substrate, opposite the first surface, the second conductor layer extending through vias (124,126) in the insulating substrate to contact at least one contact pad (122) of the first electrical component and couple with the first conductor layer. The electronics package also includes a second electrical component (102) having at least one contact pad (142) coupled to the first conductor layer. The first conductor layer has a thickness greater than a thickness of the second conductor layer.
Abstract:
A microelectronic package (10) may include a first microelectronic unit (12) including a semiconductor chip (16A) having first chip contacts (28), an encapsulant (30) contacting an edge of the semiconductor chip, and first unit contacts (42) exposed at a surface of the encapsulant (30) and electrically connected with the first chip contacts (28). The package (10) may include a second microelectronic unit (14) including a semiconductor chip (16C) having second chip contacts (28C) at a surface thereof, and an encapsulant (54) contacting an edge of the chip of the second unit (14) and having a surface extending away from the edge. The surfaces of the chip (16C) and the encapsulant (54) of the second unit (14) define a face of the second unit. Package terminals (76) at the face may be electrically connected with the first unit contacts (42) through bond wires (100) electrically connected with the first unit contacts (42), and the second chip contacts (28C) through metallized vias (72) and traces (74) formed in contact with the second chip contacts (28C).