-
1.はんだ材料及びその製造方法、接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法 审中-公开
Title translation: 焊接材料,生产焊接材料的方法,接头产品,生产接合产品的过程,功率半导体模块和用于生产功率半导体模块的工艺公开(公告)号:WO2009066704A1
公开(公告)日:2009-05-28
申请号:PCT/JP2008/071043
申请日:2008-11-19
Applicant: トヨタ自動車株式会社 , 国立大学法人東北大学 , 山田 靖 , 八木 雄二 , 高久 佳和 , 大沼 郁雄 , 石田 清仁 , 渥美 貴司 , 中川 郁朗 , 白井 幹夫
CPC classification number: C22C18/04 , B23K35/282 , B23K35/40 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29118 , H01L2224/29298 , H01L2224/32014 , H01L2224/83051 , H01L2224/83101 , H01L2224/83801 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/1579 , H01L2924/19042 , H01L2924/351 , Y10T428/12222 , H01L2924/00 , H01L2924/01049 , H01L2924/01028 , H01L2924/3512 , H01L2924/00015 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/83205
Abstract: 本発明の亜鉛系はんだ材料55は、亜鉛系材料50における表面の酸化膜501を除去した後に、又は表面に酸化膜501が存在しない状態で、前記酸化膜501よりもその酸化物が還元され易い金属を主成分とする被覆層51を前記表面に設けてなる。また、本発明の接合体およびパワー半導体モジュールは、接合部に前記亜鉛系はんだ材料55が用いられ、接合後には前記被覆層51が消失している。
Abstract translation: 锌基焊料材料(55)包括锌基材料(50)和设置在锌基材料(50)的表面上的覆盖层(51)。 在锌基材料(50)的表面上除去氧化膜(501)之后,或者在表面上形成有锌基材料(50)的表面上的情况下,在锌基材料(50)的表面上设置覆盖层 的锌基材料(50)不含氧化膜(501)。 覆盖层(51)主要由比氧化膜(501)更容易还原氧化物的金属构成。 还提供了联合产品和功率半导体模块。 在联合制品和功率半导体模块中,锌基焊料材料(55)在其接合部位使用,并且在接合时,覆盖层(51)消失。
-
2.METHOD OF FABRICATING A SEMICONDUCTOR PACKAGE OR CIRCUIT ASSEMBLY USING A FLUXING UNDERFILL COMPOSITION APPLIED TO SOLDER CONTACT POINTS IN A DIP PROCESS 审中-公开
Title translation: 使用适用于DIP工艺中的焊接接触点的焊接成分组合的半导体封装或电路组件的制造方法公开(公告)号:WO2009117476A2
公开(公告)日:2009-09-24
申请号:PCT/US2009/037491
申请日:2009-03-18
Applicant: HENKEL CORPORATION , CHAN, Chew, B. , JI, Qing , CURRIE, Mark , POOLE, Neil , KELLY, Geraldine
Inventor: CHAN, Chew, B. , JI, Qing , CURRIE, Mark , POOLE, Neil , KELLY, Geraldine
CPC classification number: H01L21/563 , H01L24/28 , H01L2224/13111 , H01L2224/13116 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/73203 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/0135 , H01L2924/014 , H01L2924/15787 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/0665
Abstract: The present invention relates to a method of fabricating a semiconductor package or circuit assembly using an fluxing underfill composition applied to solder contact points in a dip process.
Abstract translation: 本发明涉及一种制造半导体封装或电路组件的方法,所述半导体封装或电路组件使用在浸渍工艺中应用于焊接接触点的助熔底漆组合物。
-
3.JUNCTION BODY, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD FOR JUNCTION BODY 审中-公开
Title translation: 连接体,半导体模块和结构体的制造方法公开(公告)号:WO2010089647A1
公开(公告)日:2010-08-12
申请号:PCT/IB2010/000193
申请日:2010-02-02
Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , YAMADA, Yasushi , OSADA, Hiroshi , YAGI, Yuji , YOSHIDA, Tadafumi
Inventor: YAMADA, Yasushi , OSADA, Hiroshi , YAGI, Yuji , YOSHIDA, Tadafumi
CPC classification number: B23K35/007 , B22F7/006 , B22F7/08 , B23K35/262 , B23K35/28 , B23K35/30 , B32B15/01 , C22C9/02 , C22C13/00 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/83801 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1517 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H01L2924/05432 , H01L2924/00 , H01L2924/01014 , H01L2924/01083 , H01L2924/3512 , H01L2924/00015 , H01L2924/00014
Abstract: A junction body has a first member and a second member each of which is provided with a joining surface whose main component is copper. A solder member containing, in a tin-base solder material, a three-dimensional web structure whose main component is copper is provided between the first member and the second member. A copper-tin alloy whose average thickness is 2 μm or more but 20 μm or less is provided between the joining surfaces and the three-dimensional web structure.
Abstract translation: 接合体具有第一构件和第二构件,每个构件具有主要成分为铜的接合表面。 在锡基焊料中含有主要成分为铜的三维网状结构的焊料构件设置在第一构件和第二构件之间。 平均厚度为2μm以上且20μm以下的铜锡合金设置在接合面和三维网状结构体之间。
-
4.THERMAL INTERFACE MATERIAL AND ELECTRONIC ASSEMBLY HAVING SUCH A THERMAL INTERFACE MATERIAL 审中-公开
Title translation: 热接口材料和具有这种热界面材料的电子组件公开(公告)号:WO2003034489A1
公开(公告)日:2003-04-24
申请号:PCT/US2002/033422
申请日:2002-10-17
Applicant: INTEL CORPORATION
Inventor: RUMER, Christopher , KONING, Paul , JAYARAMAN, Saikumar , DANI, Ashay
IPC: H01L23/42
CPC classification number: H01L24/29 , H01L23/3737 , H01L23/42 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29309 , H01L2224/29311 , H01L2224/29324 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/29386 , H01L2224/29393 , H01L2224/32245 , H01L2224/73253 , H01L2924/0001 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/16152 , Y10S428/913 , Y10T428/1225 , Y10T428/12701 , Y10T428/12896 , Y10T428/25 , Y10T428/252 , Y10T428/256 , Y10T428/257 , Y10T428/258 , Y10T428/2982 , Y10T428/31511 , Y10T428/31529 , Y10T428/31663 , Y10T428/31692 , H01L2924/00 , H01L2924/01022 , H01L2924/01034 , H01L2924/01083 , H01L2224/29099 , H01L2924/00014 , H01L2924/0503 , H01L2924/05032 , H01L2924/04642 , H01L2924/05432 , H01L2224/29199 , H01L2224/29299
Abstract: A thermal interface material is described for thermal coupling of an electronic component to a thermally conductive member. The thermal interface material includes a viscoelastic polymer matrix material, fusible solder particles in the matrix material, and filler particles in the matrix material. The solder particles have a melting temperature below a selected temperature (e.g. 157°C for indium) and the filler particles have a melting temperature substantially above the selected temperature (e.g. 961°C for silver). The filler particles keep the thermal interface material intact under adverse thermal and stress conditions.
Abstract translation: 描述了热界面材料用于将电子部件热耦合到导热部件。 热界面材料包括粘弹性聚合物基质材料,基质材料中的易熔焊料颗粒和基质材料中的填料颗粒。 焊料颗粒的熔融温度低于所选择的温度(例如铟的157℃),并且填料颗粒具有基本上高于所选温度的熔融温度(例如银的961℃)。 填料颗粒在不利的热和应力条件下保持热界面材料完好无损。
-
公开(公告)号:WO2011081213A1
公开(公告)日:2011-07-07
申请号:PCT/JP2010/073849
申请日:2010-12-22
Applicant: 千住金属工業株式会社 , 上島 稔 , 豊田 実
CPC classification number: H01L23/49582 , H01L23/3107 , H01L23/4334 , H01L23/49513 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05155 , H01L2224/05644 , H01L2224/08501 , H01L2224/29026 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/293 , H01L2224/29311 , H01L2224/29447 , H01L2224/32245 , H01L2224/32501 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/73265 , H01L2224/83192 , H01L2224/83193 , H01L2224/83455 , H01L2224/83801 , H01L2224/85444 , H01L2224/92247 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/0135 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H05K3/3421 , H05K3/3463 , H05K2203/047 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/32145 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: ダイボンド用はんだ材料を使用して形成された面実装部品を、実装用はんだ材料を使用してプリント基板にはんだ付けするときでも、ダイボンド用はんだ材料の溶解が起きないようにした。 ダイパット用はんだ材料30として、Cuの含有量が所定値以下のSnを主成分とする(Sn-Sb)系の高融点はんだ材料を使用して形成された面実装部品を、回路基板の基板端子部に塗布された実装用はんだ材料70として、(Sn-Ag-Cu-Bi)系はんだ材料を用いてはんだ付けする。ダイボンド用はんだ材料30の固相線温度は243℃であり、実装用はんだ材料70の液相線温度は215~220℃程度であるので、リフロー炉の加熱温度(240℃以下)によってもダイボンド用はんだ材料30は溶解しない。
Abstract translation: 提供一种用于焊接表面安装部件和表面安装部件的方法,即使当使用芯片焊接焊料形成的表面安装部件焊接到印刷电路板上时,也不会发生芯片焊接焊料的溶解 板使用安装焊料。 使用Sn(Sn-Sb)高熔点焊料作为主要成分形成的表面安装成分,Cu含量为规定值以下,作为模焊焊料30。 使用(Sn-Ag-Cu-Bi)焊料材料进行焊接,该材料用作已经被施加到电路板的板端子部分的安装焊料材料(70)。 芯片焊接材料(30)的固相线温度为243℃,安装焊料(70)的液相线温度为215℃至220℃。 即使在回流炉(240℃以下)的加热温度下,芯片焊接材料(30)也不会溶解。
-
6.METHOD OF FABRICATING A SEMICONDUCTOR PACKAGE OR CIRCUIT ASSEMBLY USING A FLUXING UNDERFILL COMPOSITION APPLIED TO SOLDER CONTACT POINTS IN A DIP PROCESS 审中-公开
Title translation: 使用焊接式底部填充组合物制造半导体封装或电路组件的方法,该方法应用于DIP工艺中的焊接接点公开(公告)号:WO2009117476A3
公开(公告)日:2009-11-19
申请号:PCT/US2009037491
申请日:2009-03-18
Applicant: HENKEL CORP , CHAN CHEW B , JI QING , CURRIE MARK , POOLE NEIL , KELLY GERALDINE
Inventor: CHAN CHEW B , JI QING , CURRIE MARK , POOLE NEIL , KELLY GERALDINE
CPC classification number: H01L21/563 , H01L24/28 , H01L2224/13111 , H01L2224/13116 , H01L2224/16 , H01L2224/29111 , H01L2224/2919 , H01L2224/73203 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/0135 , H01L2924/014 , H01L2924/15787 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/0665
Abstract: The present invention relates to a method of fabricating a semiconductor package or circuit assembly using an fluxing underfill composition applied to solder contact points in a dip process.
Abstract translation: 本发明涉及一种制造半导体封装或电路组件的方法,所述半导体封装或电路组件使用在浸渍工艺中应用于焊接接触点的助熔底部填充组合物。
-
-
-
-
-