公开(公告)号：US08633103B2

公开(公告)日：2014-01-21

申请号：US12814472

申请日：2010-06-13

申请人： Hanae Hata ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

发明人： Hanae Hata ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

IPC分类号： H01L21/60 ,  H01L23/488

CPC分类号： H01L24/11 ,  H01L24/16 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/45144 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48

摘要： In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.

摘要翻译： 为了实现能够通过堆叠薄片和衬底的高速传输的高可靠性和高功能的半导体器件，能够在低负载下实现牢固连接的连接工艺和连接结构，并且保持 即使在堆叠过程中加热连接部分并且提供随后的安装过程，连接部分的形状也是如此。 在其中堆叠半导体芯片的半导体芯片或布线板堆叠的半导体器件中，堆叠的半导体芯片或布线板的电极之间的连接结构包括主要由Cu制成的一对电极和由Sn- 夹在电极之间的基体合金和Sn-Cu-Ni金属间化合物分散在焊料层中。

公开(公告)号：US07722962B2

公开(公告)日：2010-05-25

申请号：US10451610

申请日：2001-12-19

申请人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida, legal representative ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

发明人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

IPC分类号： H05K1/02 ,  H05K1/00 ,  B32B15/20

CPC分类号： H01L24/01 ,  B23K3/063 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K3/3478 ,  H05K2201/0215 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0405 ,  H05K2203/0425 ,  Y10T428/12528 ,  Y10T428/12708 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298

摘要： A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

摘要翻译： 由包含作为金属颗粒的Cu等颗粒和作为焊料颗粒的Sn颗粒通过轧制形成的焊料箔适合于在温度分级粘合中的高温侧的焊料接合，以及通过使用制造的半导体器件和电子器件 这种焊接结合具有突出的机械特性的可靠性等。

公开(公告)号：US06872465B2

公开(公告)日：2005-03-29

申请号：US10384931

申请日：2003-03-07

申请人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： B23K35/14 ,  B23K35/02 ,  B23K35/26 ,  H01L21/60 ,  H01L23/10 ,  H01L23/12 ,  H01L23/498 ,  H05K3/34 ,  B32B15/02

CPC分类号： H05K3/3484 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/262 ,  H01L23/49816 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11334 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81801 ,  H01L2224/82 ,  H01L2224/85 ,  H01L2224/86 ,  H01L2924/01012 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K2201/0215 ,  Y10T428/12181 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/1275 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/1291 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： In a solder that realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a connection portion between a semiconductor device and a substrate is formed of metal balls made of Cu or the like and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

摘要翻译： 在实现温度分级接合中的高温侧焊料接合的焊料中，半导体器件与基板之间的连接部由金属球等构成的金属球和由金属球和Sn形成的化合物形成， 金属球通过化合物结合在一起。

公开(公告)号：US20110012263A1

公开(公告)日：2011-01-20

申请号：US12814472

申请日：2010-06-13

申请人： Hanae HATA ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

发明人： Hanae HATA ,  Masato Nakamura ,  Nobuhiro Kinoshita ,  Jumpei Konno ,  Chiko Yorita

IPC分类号： H01L23/538 ,  H01L21/60

CPC分类号： H01L24/11 ,  H01L24/16 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/45144 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/48

摘要： In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.

摘要翻译： 为了实现能够通过堆叠薄片和衬底的高速传输的高可靠性和高功能的半导体器件，能够在低负载下实现牢固连接的连接工艺和连接结构，并且保持 即使在堆叠过程中加热连接部分并且提供随后的安装过程，连接部分的形状也是如此。 在其中堆叠半导体芯片的半导体芯片或布线板堆叠的半导体器件中，堆叠的半导体芯片或布线板的电极之间的连接结构包括主要由Cu制成的一对电极和由Sn- 夹在电极之间的基体合金和Sn-Cu-Ni金属间化合物分散在焊料层中。

公开(公告)号：US20100309641A1

公开(公告)日：2010-12-09

申请号：US12521602

申请日：2008-03-21

申请人： Hanae Hata ,  Masato Nakamura ,  Masaki Nakanishi ,  Nobuhiro Kinoshita

发明人： Hanae Hata ,  Masato Nakamura ,  Masaki Nakanishi ,  Nobuhiro Kinoshita

IPC分类号： H05K7/00 ,  H01L23/488 ,  H01L21/60 ,  H05K1/09 ,  H05K3/10

CPC分类号： H01L23/49811 ,  H01L21/563 ,  H01L23/498 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/742 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/05553 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81801 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01009 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/108 ,  H05K3/244 ,  H05K3/3452 ,  H05K3/3457 ,  H05K2201/0989 ,  H05K2201/10674 ,  H05K2203/013 ,  H05K2203/049 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of forming narrow-pitch flip-chip bonding electrodes and wire bonding electrodes at the same time is provided so as to reduce the cost of a substrate. In addition, a low-cost solder supply method and a flip-chip bonding method to a thin Au layer are provided. A stacked layer of a Cu layer 23 and a Ni layer 24 is employed as the electrode structure, and an Au layer 25 is plated on the outer periphery thereof. In the flip-chip bonding, dissolution of Au into the solder is minimized by employing a metal jet system in the soldering to the electrodes, so that the formation of Sn—Au having a high melting point is prevented, and at the same time, the wire-bondable Au layer 25 is ensured.

摘要翻译： 同时提供形成窄间距倒装芯片接合电极和引线接合电极的方法，以降低基板的成本。 此外，提供了一种对于薄Au层的低成本焊料供给方法和倒装焊接方法。 使用Cu层23和Ni层24的堆叠层作为电极结构，在其外周面上镀Au层25。 在倒装芯片接合中，通过在焊接到电极中使用金属喷射系统来将Au溶解到焊料中被最小化，从而防止形成具有高熔点的Sn-Au，同时， 可焊接的Au层25被确保。

公开(公告)号：US06563225B2

公开(公告)日：2003-05-13

申请号：US10083543

申请日：2002-02-27

申请人： Tasao Soga ,  Toshiharu Ishida ,  Kazuma Miura ,  Hanae Hata ,  Masahide Okamoto ,  Tetsuya Nakatsuka

发明人： Tasao Soga ,  Toshiharu Ishida ,  Kazuma Miura ,  Hanae Hata ,  Masahide Okamoto ,  Tetsuya Nakatsuka

IPC分类号： H01L2348

CPC分类号： H01L24/27 ,  B22F1/0003 ,  B23K1/0004 ,  B23K35/0244 ,  B23K35/282 ,  B23K2101/40 ,  C22C18/00 ,  C22C18/04 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29218 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29411 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/751 ,  H01L2224/75251 ,  H01L2224/75745 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/0135 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01051 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： There is provided an electronic device comprising at least one electronic part and a substrate on which said electronic part is mounted, said electronic part and said substrate being bonded by a joint comprising a phase of Al particles and another phase of a Al—Mg—Ge—Zn alloy, said Al particles being connected to each other by said Al—Mg—Ge—Zn alloy phase.

公开(公告)号：US20060145352A1

公开(公告)日：2006-07-06

申请号：US11338529

申请日：2006-01-23

申请人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

发明人： Tasao Soga ,  Hanae Hata ,  Tetsuya Nakatsuka ,  Mikio Negishi ,  Hirokazu Nakajima ,  Tsuneo Endoh

IPC分类号： H01L23/48

CPC分类号： H05K3/3484 ,  B23K35/0244 ,  B23K35/262 ,  H01L24/73 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/141 ,  H05K3/3463 ,  H05K2201/0215 ,  H05K2201/0218 ,  H05K2201/045 ,  H05K2201/10636 ,  Y02P70/611 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05669

摘要： In an electronic device which realizes high-temperature-side solder bonding in temperature-hierarchical bonding, a bonding portion between a semiconductor device and a substrate is formed of metal balls made of Cu, or the like, and compounds formed of metal balls and Sn, and the metal balls are bonded together by the compounds.

摘要翻译： 在实现温度分级接合中的高温侧焊接的电子设备中，半导体器件与衬底之间的接合部分由Cu等金属球形成，并且由金属球和Sn形成的化合物 ，金属球通过化合物结合在一起。

公开(公告)号：US20060061974A1

公开(公告)日：2006-03-23

申请号：US10451610

申请日：2001-12-19

申请人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

发明人： Tasao Soga ,  Hanae Hata ,  Toshiharu Ishida ,  Kanko Ishida ,  Tetsuya Nakatsuka ,  Masahide Okamoto ,  Kazuma Miura

IPC分类号： H05K1/16 ,  H01L23/48 ,  H05K1/14

CPC分类号： H01L24/01 ,  B23K3/063 ,  B23K2101/40 ,  H01L24/27 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/292 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/166 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K3/3478 ,  H05K2201/0215 ,  H05K2203/0143 ,  H05K2203/0278 ,  H05K2203/0405 ,  H05K2203/0425 ,  Y10T428/12528 ,  Y10T428/12708 ,  Y10T428/12903 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01031 ,  H01L2924/01022 ,  H01L2924/01026 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298

摘要： A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and electronic devices produced by use of such solder bonding have distinguished reliability of mechanical characteristics, etc.

摘要翻译： 由包含作为金属颗粒的Cu等颗粒和作为焊料颗粒的Sn颗粒通过轧制形成的焊料箔适用于在温度分级粘合中的高温侧的焊接，以及通过使用制造的半导体器件和电子器件 这种焊接结合具有突出的机械特性的可靠性等。