公开(公告)号：US08836134B2

公开(公告)日：2014-09-16

申请号：US13738082

申请日：2013-01-10

Applicant: Po-Shen Lin ,  Chuan-Jin Shiu ,  Bing-Siang Chen ,  Chen-Han Chiang ,  Chien-Hui Chen ,  Hsi-Chien Lin ,  Yen-Shih Ho

Inventor： Po-Shen Lin ,  Chuan-Jin Shiu ,  Bing-Siang Chen ,  Chen-Han Chiang ,  Chien-Hui Chen ,  Hsi-Chien Lin ,  Yen-Shih Ho

IPC: H01L23/48 ,  H01L21/00

CPC classification number: H01L21/78 ,  B81C1/00888 ,  H01L21/561 ,  H01L23/12 ,  H01L23/3114 ,  H01L23/562 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/1461 ,  H01L2924/16235 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor stacked package is provided. A singulation process is performed on a wafer and a substrate, on which the wafer is stacked. A portion of the wafer on a cutting region is removed, to form a stress concentrated region on an edge of a chip of the wafer. The wafer and the substrate are then cut, and a stress is forced to be concentrated on the edge of the chip of the wafer. As a result, the edge of the chip is warpaged. Therefore, the stress is prevented from extending to the inside of the chip. A semiconductor stacked package is also provided.

Abstract translation: 提供一种制造半导体堆叠封装的方法。 在晶片和基板上进行单晶化处理，晶片和晶片被堆叠在其上。 去除切割区域上的晶片的一部分，以在晶片的芯片的边缘上形成应力集中区域。 然后切割晶片和基板，并且迫使应力集中在晶片的芯片的边缘上。 结果，芯片的边缘变形。 因此，防止了应力延伸到芯片的内部。 还提供半导体堆叠封装。

公开(公告)号：US20140252659A1

公开(公告)日：2014-09-11

申请号：US14199640

申请日：2014-03-06

Applicant: XINTEC INC.

Inventor： Yung-Tai TSAI ,  Shu-Ming CHANG ,  Chun-Wei CHANG ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/3192 ,  H01L24/03 ,  H01L2224/02371 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00014

Abstract: A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

Abstract translation: 半导体结构包括晶片，至少一个非金属氧化物层，焊盘，钝化层，隔离层和导电层。 晶片具有连接在第二和第三表面之间的第一表面，第二表面，第三表面，第一阶段差异表面以及连接在第一和第三表面之间的第二阶段差异表面。 非金属氧化物层位于晶片的第一表面上。 垫位于非金属氧化物层上并电连接到晶片。 钝化层位于非金属氧化物层上。 隔离层位于钝化层，非金属氧化物层，晶片的第一，第二和第三表面以及晶片的第一和第二级差分表面上。 导电层位于隔离层上并电接触焊盘。

公开(公告)号：US20140231966A1

公开(公告)日：2014-08-21

申请号：US14260205

申请日：2014-04-23

Applicant: XINTEC INC.

Inventor： Bai-Yao LOU ,  Tsang-Yu LIU ,  Chia-Sheng LIN ,  Tzu-Hsiang HUNG

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/32225 ,  H01L2224/73153 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment of the invention provides a chip package which includes a substrate having a first surface and a second surface; a conducting pad structure located on the first surface; a dielectric layer located on the first surface of the substrate and the conducting pad structure, wherein the dielectric layer has an opening exposing a portion of the conducting pad structure; and a cap layer located on the dielectric layer and filled into the opening.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括具有第一表面和第二表面的基板; 位于所述第一表面上的导电垫结构; 位于所述基板的所述第一表面上的电介质层和所述导电焊盘结构，其中所述电介质层具有暴露所述导电焊盘结构的一部分的开口; 以及位于电介质层上并填充到开口中的盖层。

公开(公告)号：US20140203387A1

公开(公告)日：2014-07-24

申请号：US14157379

申请日：2014-01-16

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Yen-Shih HO ,  Tsang-Yu LIU

IPC: H01L31/02

CPC classification number: H01L31/02005 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/0231 ,  H01L2224/11

Abstract: Disclosed herein is a semiconductor chip package, which includes a semiconductor chip, a plurality of vias, an isolation layer, a redistribution layer, and a packaging layer. The vias extend from the lower surface to the upper surface of the semiconductor chip. The vias include at least one first via and at least one second via. The isolation layer also extends from the lower surface to the upper surface of the semiconductor chip, and part of the isolation layer is disposed in the vias. The sidewall of the first via is totally covered by the isolation layer while the sidewall of the second via is partially covered by the isolation layer. The redistribution layer is disposed below the isolation layer and fills the plurality of vias, and the packaging layer is disposed below the isolation layer.

Abstract translation: 这里公开了一种半导体芯片封装，其包括半导体芯片，多个通孔，隔离层，再分布层和封装层。 通孔从半导体芯片的下表面延伸到上表面。 通孔包括至少一个第一通孔和至少一个第二通孔。 隔离层也从半导体芯片的下表面延伸到上表面，并且隔离层的一部分设置在通孔中。 第一通孔的侧壁完全被隔离层覆盖，而第二通孔的侧壁被隔离层部分地覆盖。 再分配层设置在隔离层下方并填充多个通孔，并且包装层设置在隔离层下方。

公开(公告)号：US20140199835A1

公开(公告)日：2014-07-17

申请号：US14214389

申请日：2014-03-14

Applicant: XINTEC INC.

Inventor： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Long-Sheng YEOU

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/13025 ,  H01L2224/9202 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein an upper sidewall of the hole inclines to the lower surface of the substrate, and a lower sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract translation: 根据本发明的实施例，提供了芯片封装。 芯片封装包括：具有上表面和下表面的基板; 位于所述基板的下表面下方的多个导电垫; 位于导电垫之间的电介质层; 从衬底的上表面延伸到下表面的沟槽; 从所述沟槽的底部延伸到所述衬底的下表面的孔，其中所述孔的上侧壁倾斜到所述衬底的下表面，并且所述孔的下侧壁或底部暴露所述导电垫的一部分 ; 以及导电层，其位于所述孔中并电连接到至少一个所述导电焊盘。

公开(公告)号：US20140191350A1

公开(公告)日：2014-07-10

申请号：US14150637

申请日：2014-01-08

Applicant: XINTEC INC.

Inventor： Chih-Hao CHEN ,  Bai-Yao LOU ,  Shih-Kuang CHEN

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14698 ,  H01L2224/13

Abstract: An image sensor chip package is disclosed, which includes a substrate, an image sensor component formed on the substrate, a spacer formed on the substrate and surrounding the image sensor component, and a transparent plate. A stress notch is formed on a side of the transparent plate, and a breaking surface is extended from the stress notch. A method for fabricating the image sensor chip package is also disclosed.

Abstract translation: 公开了一种图像传感器芯片封装，其包括基板，形成在基板上的图像传感器部件，形成在基板上并围绕图像传感器部件的间隔件和透明板。 在透明板的一侧形成有应力缺口，并且断裂面从应力凹口延伸。 还公开了一种用于制造图像传感器芯片封装的方法。

公开(公告)号：US08716109B2

公开(公告)日：2014-05-06

申请号：US14030058

申请日：2013-09-18

Applicant: Xintec Inc.

Inventor： Ching-Yu Ni ,  Chang-Sheng Hsu

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B81B7/0051 ,  B81C2203/0118 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/585 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/93 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/2732 ,  H01L2224/27618 ,  H01L2224/29082 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/95001 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2224/83 ,  H01L2224/11 ,  H01L2924/3512 ,  H01L2924/00

Abstract: A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package contains a semiconductor substrate having a chip. A packaging layer is disposed over the semiconductor substrate. A spacer is disposed between the semiconductor substrate and the packaging layer, wherein a side surface consisting of the semiconductor substrate, the spacer and the packaging layer has a recess section. The method includes forming a plurality of spacers between a plurality of chips of a semiconductor wafer and a packaging layer, wherein each spacer corresponding to each chip is separated from each other and the spacer is shrunk inward from an edge of the chip to form a recess section and dicing the semiconductor wafer along a scribe line between any two adjacent chips to form a plurality of chip packages.

Abstract translation: 根据本发明的实施例提供了芯片封装及其制造方法。 芯片封装包含具有芯片的半导体衬底。 封装层设置在半导体衬底上。 间隔件设置在半导体衬底和封装层之间，其中由半导体衬底，间隔件和封装层组成的侧表面具有凹部。 该方法包括在半导体晶片的多个芯片和封装层之间形成多个间隔物，其中对应于每个芯片的每个间隔件彼此分离，并且间隔件从芯片的边缘向内收缩以形成凹部 并且沿着任何两个相邻芯片之间的划线切割半导体晶片以形成多个芯片封装。

公开(公告)号：US20140113412A1

公开(公告)日：2014-04-24

申请号：US14135506

申请日：2013-12-19

Applicant: XINTEC INC.

Inventor： Chia-Lun TSAI ,  Chia-Ming CHENG ,  Long-Sheng YEOU

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00825 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2203/0118

Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.

Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。

公开(公告)号：US20140091441A1

公开(公告)日：2014-04-03

申请号：US14092795

申请日：2013-11-27

Applicant: XINTEC INC.

Inventor： Yao-Hsiang CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO ,  Shu-Ming CHANG

IPC: H01L23/552 ,  H01L23/00 ,  H01L21/71

CPC classification number: H01L23/552 ,  H01L21/71 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06155 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: An IC wafer and the method of making the IC wafer, the IC wafer includes an integrated circuit layer having a plurality of solder pads and an insulated layer arranged thereon, a plurality of through holes cut through the insulated layer corresponding to the solder pads respectively for the implantation of a package layer, and an electromagnetic shielding layer formed on the top surface of the insulated layer and electrically isolated from the solder pads of the integrated circuit layer for electromagnetic shielding. Thus, the integrated circuit does not require any further shielding mask, simplifying the fabrication. Further, the design of the through holes facilitates further packaging process.

Abstract translation: IC晶片和IC晶片的制造方法，IC晶片包括具有多个焊盘和设置在其上的绝缘层的集成电路层，多个贯穿相应于焊盘的绝缘层的通孔，分别用于 封装层的注入，以及形成在绝缘层的顶表面上并与用于电磁屏蔽的集成电路层的焊盘电隔离的电磁屏蔽层。 因此，集成电路不需要任何进一步的屏蔽掩模，从而简化制造。 此外，通孔的设计有助于进一步的包装过程。

公开(公告)号：US20130320559A1

公开(公告)日：2013-12-05

申请号：US13900081

申请日：2013-05-22

Applicant: XINTEC INC.

Inventor： Yu-Ting HUANG ,  Shu-Ming CHANG ,  Yen-Shih HO ,  Tsang-Yu LIU

IPC: B81B7/00

CPC classification number: B81B7/0077 ,  B81B7/007 ,  B81B2207/095 ,  B81B2207/096 ,  H01L21/64 ,  H01L23/481 ,  H01L23/498 ,  H01L23/525 ,  H01L24/02 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06182 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00

Abstract: An embodiment of the invention provides a chip package including: a first semiconductor substrate; a second semiconductor substrate disposed on the first semiconductor substrate, wherein the second semiconductor substrate includes a lower semiconductor layer, an upper semiconductor layer, and an insulating layer located between the lower semiconductor layer and the upper semiconductor layer, and a portion of the lower semiconductor layer electrically contacts with at least a pad on the first semiconductor substrate; a signal conducting structure disposed on a lower surface of the first semiconductor substrate, wherein the signal conducting structure is electrically connected to a signal pad on the first semiconductor substrate; and a conducting layer disposed on the upper semiconductor layer of the second semiconductor substrate and electrically contacted with the portion of the lower semiconductor layer electrically contacting with the at least one pad on the first semiconductor substrate.

Abstract translation: 本发明的实施例提供一种芯片封装，包括：第一半导体衬底; 设置在所述第一半导体衬底上的第二半导体衬底，其中所述第二半导体衬底包括下半导体层，上半导体层和位于所述下半导体层和所述上半导体层之间的绝缘层，以及所述下半导体 层与第一半导体衬底上的至少焊盘电接触; 信号导通结构，设置在所述第一半导体衬底的下表面上，其中所述信号导电结构电连接到所述第一半导体衬底上的信号焊盘; 以及导电层，其设置在所述第二半导体衬底的所述上半导体层上并与所述下半导体层的与所述第一半导体衬底上的所述至少一个焊盘电接触的部分电接触。