公开(公告)号：US08097540B2

公开(公告)日：2012-01-17

申请号：US12330635

申请日：2008-12-09

申请人： Dae-Heok Kwon

发明人： Dae-Heok Kwon

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/48 ,  H01L2224/8501 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01082 ,  H01L2924/05042 ,  H01L2924/00 ,  H01L2224/45099

摘要： A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.

摘要翻译： 一种在半导体器件中打开焊盘的方法。 可以用垫开口图案作为掩模蚀刻垫上的保护膜。 可以通过蚀刻保护膜而在打开的焊盘上进行介电加热。 可以通过用分子振动和/或微波加热来除去在垫上含有C和F基团的有机材料，其可以基本上防止和/或最小化腐蚀。

公开(公告)号：US20120001324A1

公开(公告)日：2012-01-05

申请号：US13175247

申请日：2011-07-01

申请人： Hideo AOKI ,  Hideko Mukaida ,  Masatoshi Fukuda ,  Yasuhiro Koshio ,  Hiroshi Watabe

发明人： Hideo AOKI ,  Hideko Mukaida ,  Masatoshi Fukuda ,  Yasuhiro Koshio ,  Hiroshi Watabe

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L23/562 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3171 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83102 ,  H01L2224/85375 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： In one embodiment, a semiconductor device includes a circuit substrate, and first and second semiconductor chips mounted on it. The first semiconductor chip and the second semiconductor chip are flip-chip connected, and an underfill resin is filled between them. The underfill resin has a fillet portion. A thickness T1 of the first semiconductor chip and a thickness T2 of the second semiconductor chip satisfy a relationship of T1/(T1+T2)≦0.6.

摘要翻译： 在一个实施例中，半导体器件包括电路基板，以及安装在其上的第一和第二半导体芯片。 第一半导体芯片和第二半导体芯片被倒装连接，并且在它们之间填充底部填充树脂。 底部填充树脂具有圆角部分。 第一半导体芯片的厚度T1和第二半导体芯片的厚度T2满足T1 /（T1 + T2）＆nlE; 0.6的关系。

公开(公告)号：US08018075B2

公开(公告)日：2011-09-13

申请号：US12501309

申请日：2009-07-10

申请人： Hsiao Chuan Chang ,  Tsung Yueh Tsai ,  Yi Shao Lai ,  Ho Ming Tong ,  Jian Cheng Chen ,  Wei Chi Yih ,  Chang Ying Hung

发明人： Hsiao Chuan Chang ,  Tsung Yueh Tsai ,  Yi Shao Lai ,  Ho Ming Tong ,  Jian Cheng Chen ,  Wei Chi Yih ,  Chang Ying Hung

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/85 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85201 ,  H01L2224/85375 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

摘要翻译： 半导体封装的引线接合结构包括接合线，焊盘和非导电粘合材料。 接合线包括线部分和块部分，其中块部分物理连接到线部分，并且块部分的截面积大于线部分的截面面积。 焊盘粘合到块部分。 非导电粘合剂材料覆盖焊盘并密封焊丝的整个块部分。

公开(公告)号：US20100117240A1

公开(公告)日：2010-05-13

申请号：US12390012

申请日：2009-02-20

申请人： Mattia Cichocki

发明人： Mattia Cichocki

IPC分类号： H01L23/48 ,  H01L21/31

CPC分类号： H01L27/14636 ,  H01L21/76849 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14685 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01016 ,  H01L2924/01033 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/00

摘要： A process for forming a protective layer at a surface of an aluminum bond pad. The aluminum bond pad is exposed to a solution containing silicon, ammonium persulfate and tetramethylammonium hydroxide, which results in the formation of the protective layer. This protective layer protects the bond pad surface from corrosion during processing of an imager, such as during formation of a color filter array or a micro-lens array.

摘要翻译： 一种在铝合金焊盘的表面形成保护层的工艺。 将铝接合垫暴露于含有硅，过硫酸铵和四甲基氢氧化铵的溶液中，导致保护层的形成。 该保护层在成像器的处理期间，例如在形成滤色器阵列或微透镜阵列期间，保护接合焊盘表面免受腐蚀。

公开(公告)号：US07691697B2

公开(公告)日：2010-04-06

申请号：US12213712

申请日：2008-06-24

申请人： Hiroyasu Itou

发明人： Hiroyasu Itou

IPC分类号： H01L29/72

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00015 ,  H01L2224/45147

摘要： A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.

摘要翻译： 高可靠性功率复合集成半导体器件使用厚铜电极作为功率器件部分的集电极，以抵抗降低导通电阻所需的电阻。 此外，确保了铜电极的引线接合连接，并且抑制了铜的扩散和铜的腐蚀的高温下的延时劣化。 此外，可以对功率器件部分中的集电极建立直接接合连接，并且还建立到形成在控制电路部分中的控制电路部分上的接合焊盘。 迄今为止所需要的设备周边部分的焊盘区域被减少，从而节省了设备的面积，并降低了制造成本。

公开(公告)号：US20100025849A1

公开(公告)日：2010-02-04

申请号：US12489409

申请日：2009-06-22

申请人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

发明人： Yong Chuan KOH ,  Jimmy SIAT ,  Jeffrey Nantes SALAMAT ,  Lope Vallespin PEPITO, JR. ,  Ronaldo Cayetano CALDERON ,  Rodel MANALAC ,  Pang Hup ONG ,  Kian Teng ENG

IPC分类号： H01L23/498 ,  H01L21/60 ,  B23K31/02

CPC分类号： H01L25/0657 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48478 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85395 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85447 ,  H01L2225/0651 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/01001 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/4826 ,  H01L2924/00015 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A semiconductor package and a method for constructing the package are disclosed. The package includes a substrate and a die attached thereto. A first contact region is disposed on the substrate and a second contact region is disposed on the die. The first contact region, for example, comprises copper coated with an OSP material. A copper wire bond electrically couples the first and second contact regions. Wire bonding includes forming a ball bump on the first contact region having a flat top surface. Providing the flat top surface is achieved with a smoothing process. A ball bond is formed on the second contact region, followed by stitching the wire onto the flat top surface of the ball bump on the first contact region.

摘要翻译： 公开了一种用于构造封装的半导体封装和方法。 该包装包括一个基片和一个附着于其上的管芯。 第一接触区域设置在基板上，并且第二接触区域设置在管芯上。 第一接触区域例如包括用OSP材料涂覆的铜。 铜线接合电耦合第一和第二接触区域。 线接合包括在具有平坦顶表面的第一接触区域上形成球凸点。 通过平滑处理实现提供平坦的顶面。 在第二接触区域上形成球接合，然后将线缝合到第一接触区域上的球凸块的平坦顶表面上。

公开(公告)号：US20090309222A1

公开(公告)日：2009-12-17

申请号：US12546463

申请日：2009-08-24

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L23/48

CPC分类号： H01L24/85 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/86 ,  H01L2224/02166 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/85375 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48781 ,  H01L2224/48681 ,  H01L2224/29099

摘要： An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

摘要翻译： 改进的引线键合设置有半导体器件的接合焊盘和引线框架的引线指，或者TAB带的改进的导电引线与半导体器件的焊盘焊接。 更具体地，描述了改进的引线键合，其中半导体器件的表面上的接合焊盘包括铜层和至少一层金属和/或至少在铜层和一层之间的材料阻挡层 铜层上的金属形成接合垫。

公开(公告)号：US20090243105A1

公开(公告)日：2009-10-01

申请号：US12365963

申请日：2009-02-05

申请人： Matthias Lehr ,  Frank Kuechenmeister

发明人： Matthias Lehr ,  Frank Kuechenmeister

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L21/311 ,  H01R43/02

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48095 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/85011 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10T29/4921 ,  H01L2924/00014 ,  H01L2224/05664 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00015

摘要： In semiconductor devices having a copper-based metallization system, bond pads for wire bonding may be formed directly on copper surfaces, which may be covered by an appropriately designed protection layer to avoid unpredictable copper corrosion during the wire bond process. A thickness of the protection layer may be selected such that bonding through the layer may be accomplished, while also ensuring a desired high degree of integrity of the copper surface.

摘要翻译： 在具有铜基金属化系统的半导体器件中，用于引线接合的接合焊盘可以直接形成在铜表面上，铜表面可被适当设计的保护层覆盖，以避免在引线接合过程中不可预测的铜腐蚀。 可以选择保护层的厚度，使得可以实现通过层的结合，同时还确保铜表面的期望的高度完整性。

公开(公告)号：US20090098687A1

公开(公告)日：2009-04-16

申请号：US11973859

申请日：2007-10-10

申请人： Joze Eura Antol ,  John William Osenbach ,  Ronald James Weachock

发明人： Joze Eura Antol ,  John William Osenbach ,  Ronald James Weachock

IPC分类号： H01L21/603

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48451 ,  H01L2224/48463 ,  H01L2224/48482 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83 ,  H01L2224/85051 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/859 ,  H01L2224/8592 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0106 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01202 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2224/48465 ,  H01L2924/0665 ,  H01L2924/00

摘要： It has been found that integrated packages having dies with at least 10 bonding pads separated by a pitch of 65 μm or less are susceptible to corrosion upon wire bonding to these pads and subsequent encapsulation in a passivating material. In particular, crevices are potentially formed between the bonding wire and bonding pad that are not passivated and that promote corrosion. Avoidance of crevice formation through, for example, appropriately choosing the bonding pad and wire configuration substantially avoids such corrosion.

摘要翻译： 已经发现，具有至少10个键合垫的间隔为65μm或更小的模具的集成封装在引线接合到这些焊盘并随后封装在钝化材料中时易于腐蚀。 特别地，在不被钝化并促进腐蚀的接合线和接合焊盘之间潜在地形成缝隙。 例如通过适当地选择接合焊盘和电线配置来避免缝隙形成基本上避免了这种腐蚀。

公开(公告)号：US07345358B2

公开(公告)日：2008-03-18

申请号：US11266836

申请日：2005-11-04

申请人： Salman Akram

发明人： Salman Akram

IPC分类号： H01L23/48

CPC分类号： H01L24/85 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/50 ,  H01L24/86 ,  H01L2224/02166 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48091 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48881 ,  H01L2224/85375 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2224/48824 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48781 ,  H01L2224/48681 ,  H01L2224/29099

摘要： An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

摘要翻译： 改进的引线键合设置有半导体器件的接合焊盘和引线框架的引线指，或者TAB带的改进的导电引线与半导体器件的焊盘焊接。 更具体地，描述了改进的引线键合，其中半导体器件的表面上的接合焊盘包括铜层和至少一层金属和/或至少在铜层和一层之间的材料阻挡层 铜层上的金属形成接合垫。