公开(公告)号：US09741696B2

公开(公告)日：2017-08-22

申请号：US15174338

申请日：2016-06-06

Applicant: Invensas Corporation

Inventor： Rajesh Katkar ,  Arkalgud R. Sitaram ,  Cyprian Emeka Uzoh

IPC: H01L25/065 ,  H01L23/538 ,  H01L21/768 ,  H01L23/48 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L25/00 ,  H01L23/367 ,  H01L23/42

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/31105 ,  H01L21/76897 ,  H01L21/76898 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/42 ,  H01L23/481 ,  H01L23/5386 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/00

Abstract: An apparatus relates generally to a three-dimensional stacked integrated circuit. In such an apparatus, the three-dimensional stacked integrated circuit has at least a first die and a second die interconnected to one another using die-to-die interconnects. A substrate of the first die has at least one thermal via structure extending from a lower surface of the substrate toward a well of the substrate without extending to the well and without extending through the substrate. A first end of the at least one thermal via structure is at least sufficiently proximate to the well of the substrate for conduction of heat away therefrom. The substrate has at least one through substrate via structure extending from the lower surface of the substrate to an upper surface of the substrate. A second end of the at least one thermal via structure is coupled to at least one through die via structure of the second die for thermal conductivity.

公开(公告)号：US09691702B2

公开(公告)日：2017-06-27

申请号：US15200554

申请日：2016-07-01

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L23/04 ,  H01L23/52 ,  H01L21/44 ,  H01L23/522 ,  H01L49/02 ,  H01L21/768 ,  H01L21/8234

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

公开(公告)号：US09685401B2

公开(公告)日：2017-06-20

申请号：US14815282

申请日：2015-07-31

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Pezhman Monadgemi ,  Terrence Caskey ,  Fatima Lina Ayatollahi ,  Belgacem Haba ,  Charles G. Woychik ,  Michael Newman

IPC: H05K1/00 ,  H01L23/498 ,  H01L21/768 ,  H01L23/373 ,  H01L23/48 ,  H01L23/36 ,  H01L23/367

CPC classification number: H01L23/49827 ,  H01L21/76829 ,  H01L21/76898 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/481 ,  H01L23/49838 ,  H01L23/49866 ,  H01L2924/00 ,  H01L2924/0002

Abstract: An interconnect element includes a semiconductor or insulating material layer that has a first thickness and defines a first surface; a thermally conductive layer; a plurality of conductive elements; and a dielectric coating. The thermally conductive layer includes a second thickness of at least 10 microns and defines a second surface of the interconnect element. The plurality of conductive elements extend from the first surface of the interconnect element to the second surface of the interconnect element. The dielectric coating is between at least a portion of each conductive element and the thermally conductive layer.

公开(公告)号：US09673124B2

公开(公告)日：2017-06-06

申请号：US15151176

申请日：2016-05-10

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Charles G. Woychik ,  Cyprian Emeka Uzoh

IPC: H01L23/31 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/13 ,  H01L21/48 ,  H01L21/52 ,  H01L21/54 ,  H01L23/498

CPC classification number: H01L23/3178 ,  H01L21/4853 ,  H01L21/52 ,  H01L21/54 ,  H01L21/563 ,  H01L23/13 ,  H01L23/3157 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06593 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/014

Abstract: A device and method for localizing underfill includes a substrate, a plurality of dies, and underfill material. The substrate includes a plurality of contacts and a plurality of cavities separated by a plurality of mesas. The plurality of dies is mounted to the substrate using the plurality of contacts. The underfill material is located between the substrate and the dies. The underfill material is localized into a plurality of regions using the mesas. Each of the contacts is located in a respective one of the cavities. In some embodiments, the substrate further includes a plurality of channels interconnecting the cavities. In some embodiments, the substrate further includes a plurality of intra-cavity mesas for further localizing the underfill material. In some embodiments, outer edges of a first one of the dies rest on first mesas located on edges of a first one of the cavities.

公开(公告)号：US09570385B2

公开(公告)日：2017-02-14

申请号：US14602984

申请日：2015-01-22

Applicant: Invensas Corporation

Inventor： Bong-Sub Lee ,  Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Liang Wang ,  Laura Wills Mirkarimi ,  Arkalgud R. Sitaram

IPC: H05K3/02 ,  H05K3/10 ,  H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K1/16 ,  H05K3/18

CPC classification number: H05K1/097 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/4867 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/15192 ,  H01L2924/15311 ,  H05K1/112 ,  H05K1/113 ,  H05K1/165 ,  H05K3/188 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/5313 ,  H01L2924/00

Abstract: Interposer circuitry (130) is formed on a possibly sacrificial substrate (210) from a porous core (130′) covered by a conductive coating (130″) which increases electrical conductance. The core is printed from nanoparticle ink. Then a support (120S) is formed, e.g. by molding, to mechanically stabilize the circuitry. A magnetic field can be used to stabilize the circuitry while the circuitry or the support are being formed. Other features are also provided.

Abstract translation: 内插器电路（130）由可能牺牲的基板（210）形成，所述牺牲基板（210）从由导电涂层（130“）覆盖的多孔芯（130'）形成，所述导电涂层增加导电性。 核心由纳米颗粒油墨印刷。 然后形成支撑件（120S），例如 通过模制，以机械地稳定电路。 在形成电路或支撑件的同时，可以使用磁场来稳定电路。 还提供其他功能。

公开(公告)号：US20170040270A1

公开(公告)日：2017-02-09

申请号：US14819744

申请日：2015-08-06

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Bongsub Lee ,  Scott McGrath ,  Hong Shen ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Akash Agrawal

IPC: H01L23/00 ,  H01L23/48 ,  H01L21/311

CPC classification number: H01L24/03 ,  H01L21/31144 ,  H01L21/486 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02126 ,  H01L2224/03009 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/10126 ,  H01L2224/13016 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/014

Abstract: A method of processing an interconnection element can include providing a substrate element having front and rear opposite surfaces and electrically conductive structure, a first dielectric layer overlying the front surface and a plurality of conductive contacts at a first surface of the first dielectric layer, and a second dielectric layer overlying the rear surface and having a conductive element at a second surface of the second dielectric layer. The method can also include removing a portion of the second dielectric layer so as to reduce the thickness of the portion, and to provide a raised portion of the second dielectric layer having a first thickness and a lowered portion having a second thickness. The first thickness can be greater than the second thickness. At least a portion of the conductive element can be recessed below a height of the first thickness of the second dielectric layer.

Abstract translation: 处理互连元件的方法可以包括提供具有前后相对表面和导电结构的衬底元件，覆盖前表面的第一电介质层和在第一介电层的第一表面处的多个导电触点，以及 第二电介质层覆盖在后表面上并且在第二介电层的第二表面处具有导电元件。 该方法还可以包括去除第二电介质层的一部分以减小该部分的厚度，并且提供具有第一厚度的第二介电层的凸起部分和具有第二厚度的下降部分。 第一厚度可以大于第二厚度。 导电元件的至少一部分可以凹陷到第二介电层的第一厚度的高度以下。

公开(公告)号：US20170033088A1

公开(公告)日：2017-02-02

申请号：US15234425

申请日：2016-08-11

Applicant: Invensas Corporation

Inventor： Charles G. Woychik ,  Cyprian Emeka Uzoh ,  Ron Zhang ,  Daniel Buckminster ,  Guilian Gao

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L25/0657 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/52 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/15159 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

Abstract: An apparatus relates generally to an integrated circuit package. In such an apparatus, a package substrate has a first plurality of via structures extending from a lower surface of the package substrate to an upper surface of the package substrate. An die has a second plurality of via structures extending to a lower surface of the die. The lower surface of the die faces the upper surface of the package substrate in the integrated circuit package. The package substrate does not include a redistribution layer. The die and the package substrate are coupled to one another.

Abstract translation: 装置一般涉及集成电路封装。 在这种装置中，封装衬底具有从封装衬底的下表面延伸到封装衬底的上表面的第一多个通孔结构。 模具具有延伸到模具的下表面的第二多个通孔结构。 模具的下表面在集成电路封装中面向封装衬底的上表面。 封装基板不包括再分布层。 管芯和封装衬底彼此耦合。

公开(公告)号：US09524943B2

公开(公告)日：2016-12-20

申请号：US15017897

申请日：2016-02-08

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/522 ,  H01L25/065 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L25/00 ,  H01L21/768 ,  H01L23/14

CPC classification number: H01L25/0657 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/02 ,  H01L24/18 ,  H01L24/42 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/4911 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: A method of forming a semiconductor package includes providing a substrate having one or more conductive elements disposed therein. Each conductive element extends from a first surface of the substrate toward a second surface of the substrate extending beyond the second surface. The second surface comprises one or more substrate regions not occupied by a conductive element. A first die is attached within a substrate region, and the first die is coupled to at least one of the conductive elements. The first die may be coupled to at least one of the conductive elements by a wire bond connection. Alternatively, an RDL is formed over the second surface, and the first die is coupled to at least one conductive element through the RDL. A second die may be attached to an outer surface of the RDL, and the second die is electrically coupled to the first die through the RDL.

公开(公告)号：US09496154B2

公开(公告)日：2016-11-15

申请号：US14488187

申请日：2014-09-16

Applicant: Invensas Corporation

Inventor： Eric S. Tosaya ,  Rajesh Katkar ,  Liang Wang ,  Cyprian Emeka Uzoh

IPC: H01L21/00 ,  H01L21/56 ,  H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L21/563 ,  H01L21/481 ,  H01L23/13 ,  H01L23/3178 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/06102 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/16237 ,  H01L2224/2908 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29388 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81395 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83385 ,  H01L2224/83856 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/14 ,  H01L2924/15159 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83

Abstract: A microelectronic component (110, 120) has a contact pad (110C, 120C, 920C) recessed in a cavity (410) and covered by underfill tape (130). The cavity has a void (410V) below the underfill tape. A protruding contact pad of another microelectronic component ruptures the underfill tape to enter the cavity and bond to the recessed contact pad. The void helps in rupturing the underfill tape, thus reducing the amount of underfill residue between the two contact pads and improving the contact resistance. Also provided is a microelectronic component having a substrate with a cavity and having a through-substrate via extending into the cavity. Other features are also provided.

Abstract translation: 微电子部件（110,120）具有凹陷在空腔（410）中并被底部填充带（130）覆盖的接触垫（110C，120C，920C）。 空腔在底部填充带下方具有空隙（410V）。 另一微电子元件的突出的接触垫破坏了底部填充带进入腔并结合到凹陷接触垫。 该空隙有助于破裂底部填充带，从而减少两个接触垫之间的底部填充残余物的量并改善接触电阻。 还提供了一种微电子部件，其具有带有空腔的基板，并且具有延伸到空腔中的贯穿基板。 还提供其他功能。

公开(公告)号：US20160315047A1

公开(公告)日：2016-10-27

申请号：US15200554

申请日：2016-07-01

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Charles G. Woychik ,  Arkalgud R. Sitaram ,  Hong Shen ,  Zhuowen Sun ,  Liang Wang ,  Guilian Gao

IPC: H01L23/522 ,  H01L21/768 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, conductive features (120E.A, 120E.B) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Abstract translation: 在具有穿过衬底（104）并且突出在衬底上方的导电通路（114）的微电子部件中，导电特征（120E.A，120E.B）设置在衬底上方，该衬底环绕导电通孔突起（114'） ）以形成电容器，电磁屏蔽以及可能的其他元件。 还提供了其它特征和实施例。