摘要:
A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost.
摘要:
According to a method of redistributing a functional element of the present invention, an insulating resin layer is supplied onto a functional element wafer such as an LSI. A portion to be a via hole on an electrode pad of the functional element is filled with a sacrificial layer. The top of the sacrificial layer filled in the via hole is exposed from the insulating layer by grinding or polishing. Therefore, it is possible to prevent breakage of a brittle material such as a low-k material in the functional element, which would be caused by transmission of shearing stress when a conventional pillar or a conventional gold projecting electrode is used. The reliability, the yield, and the level of flatness can be improved by forming an interconnection conductive layer after the flattening process of grinding or polishing. Accordingly, a fine conductive interconnection can be formed.
摘要:
A method of providing a metal interconnect to second structures embedded in organic dielectric material is disclosed. In one aspect, the method includes obtaining a first structure with second structures, e.g., metal pillars, embedded in organic dielectric material. The method further includes, at least at some locations of the first structure, providing a stiffening layer on top of the organic dielectric material, the stiffening layer having a stiffness higher than the stiffness of the organic dielectric material. The method provides an interconnect structure free from cracks at the interface between the second structures and the organic dielectric material.
摘要:
The semiconductor device comprises a semiconductor chip and a printed wiring board having a recess in which the semiconductor chip is housed face-down, wherein the printed wiring board comprises multiple wiring layers below a circuit surface of the semiconductor chip on which connection terminals are formed, and the multiple wiring layers include a first wiring layer for forming signal wires, a second wiring layer for forming a ground plane, and a third wiring layer for forming power wires and power BGA and ground BGA pads in sequence from the circuit surface.
摘要:
The semiconductor device comprises a semiconductor chip and a printed wiring board having a recess in which the semiconductor chip is housed face-down, wherein the printed wiring board comprises multiple wiring layers below a circuit surface of the semiconductor chip on which connection terminals are formed, and the multiple wiring layers include a first wiring layer for forming signal wires, a second wiring layer for forming a ground plane, and a third wiring layer for forming power wires and power BGA and ground BGA pads in sequence from the circuit surface.
摘要:
A wiring board for mounting semiconductor device, includes at least a dielectric film 1; wirings formed in the dielectric film 1; a plurality of electrode pads provided at front and back surfaces of the dielectric film with their surfaces exposed and at least portions of lateral sides of them buried into the dielectric film; vias connecting the wirings and the electrode pads. At least one via connecting each other the wirings formed in the dielectric film includes second material different from first material forming the vias connecting the wirings and the electrode pads. The wiring board for mounting semiconductor device, is effective for an increase in terminals and finer pitch of terminal intervals due to an improvement in integration, performance or multi-function of semiconductor devices, can mount semiconductor devices especially on both sides of the board at a high density and high accuracy, and furthermore, is excellent in reliability as well.
摘要:
A structure for mounting a SAW (Surface Acoustic Wave) device includes photosensitive resin filling a gap between the SAW device and a mounting substrate in the peripheral portion of the SAW device. The entire structure is substantially as small in size as the SAW device and light weight. The photosensitive resin is formed in a region including pads for connection in order to absorb thermal stresses and extraneous forces apt to act on the pads. Second resin may surround the photosensitive resin or may be provided in a laminate structure together with the photosensitive resin so as to enhance a sealing ability. A method of mounting a SAW device is also disclosed.
摘要:
A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost.
摘要:
A wiring board is configured by stacking one or more conductor wiring layers and one or more insulating resin layers and comprising one or more metal vias configured to penetrate the insulating resin layer, wherein the boundary surface between the metal via and the insulating resin layer has a concavo-convex boundary cross-section structure in which the metal via and the insulating resin layer are engaged with each other.
摘要:
A reliable semiconductor device including support bumps so as to adequately seal the region between the chips is to be provided. The semiconductor device includes a semiconductor chip; a bump formed on an upper face of the semiconductor chip; and a plurality of support bumps formed along a circumference of the region where the bump is provided, formed on the upper face of the semiconductor chip; and a flow path for a sealing resin is provided between the plurality of support bumps, so as to connect the region where the bump is provided and a periphery region of the semiconductor chip.