Abstract:
There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 μm as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 μm and the silver oxide particles.
Abstract:
A connecting material that includes metallic particles with an oxygen state ratio of less than 15% as measured by X-ray photoelectron spectroscopy and a mean particle size between 0.1 μm and 50 μm; and especially a connecting material that includes metallic particles that have been subjected to treatment for removal of a surface oxide film and subjected to surface treatment with a surface protective material, so as to provide a connecting material having a high coefficient of thermal conductivity even when joined at a curing temperature of up to 200° C. without application of a load, and that has sufficient bonding strength even when the cured product has been heated at 260° C.; as well as a semiconductor device employing the connecting material to bond a semiconductor element to a support member.
Abstract:
Provided is a copper nano paste that can be calcined at a relatively low temperature. The copper nano paste includes: a binder added in an amount of 0.1 to 30 parts by weight; an additive added in an amount of not more than 10 parts by weight; and copper particles added in an amount of 1 to 95 parts by weight, wherein the copper particles have a particle size of 150 nm or less, and the surfaces of the copper particles are coated with a capping material.
Abstract:
A voltage switchable dielectric material comprising a concentration of multi-component particles that are individually formed by a mechanical or mechanochemical bonding process that bonds a semiconductive or conductive-type host particle with multiple insulative, conductive, or semi-conductive guest particles.
Abstract:
Particles and particle films are provided. In certain examples, particles produced from a single phase process may be used to provide industrial scale synthesis of particles for use in devices such as printed wiring boards.
Abstract:
A conductive bonding material having an improved preservation stability, and hardens when desired, preferably immediately hardens at a low temperature is provided. In one invention, the conductive bonding material comprises a conductive particle ingredient, an epoxy resin ingredient, and a hardening agent ingredient for said epoxy resin and the hardening agent ingredient for said epoxy resin further comprise a reforming agent having a thiol group. In another invention, a conductive bonding material comprising an epoxy resin hardening ingredient, wherein said epoxy resin hardening ingredient contains a sulfur-containing compound having an end group which can coordinate with a surface of the metallic particles, and the sulfur-containing compound comes to perform as a hardening agent for the epoxy resin by dissociating from the surface of the metallic particles. The conductive bonding material may contain fragrance.
Abstract:
A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.
Abstract:
A silver fine powder comprising silver particles with an average particle diameter of 20 nm or less and having an organic protective material on the surface thereof, wherein the proportion of the organic protective material present is 0.05 to 25% by mass based on the total mass of the silver particles and the organic protective material. An amine compound having a molecular weight of 100 to 1,000 is preferably used as the organic protective material, and that having one or more unsaturated bond in one molecule is particularly preferred. This silver fine powder has, for example, a crystallite diameter in (111) crystal plane of silver particle of 20 nm or less. The present invention further provides an ink comprising particles of the silver fine powder dispersed in an organic solvent in the silver concentration of 10% by mass or more, the ink having a viscosity of 50 mPa·s or less.
Abstract:
A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.
Abstract:
The invention provides a connecting material comprising metallic particles with an oxygen state ratio of less than 15% as measured by X-ray photoelectron spectroscopy, and especially a connecting material comprising metallic particles that have been subjected to treatment for removal of the surface oxide film and to surface treatment with a surface protective material, for the purpose of providing a connecting material having a high coefficient of thermal conductivity even when joined at a curing temperature of up to 200° C. without application of a load, and that has sufficient bonding strength even when the cured product has been heated at 260° C., as well as a semiconductor device employing it.