Dielectric structure and method of formation
    249.
    发明申请
    Dielectric structure and method of formation 失效
    介电结构和形成方法

    公开(公告)号:US20030010440A1

    公开(公告)日:2003-01-16

    申请号:US10217616

    申请日:2002-08-12

    Abstract: A dielectric structure, and an associated method of fabrication, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The partially cured PID layer be formed either in isolation, or by successively forming upon one of the fully cured PID layers: the first partially cured PID sheet, the power plane, and the second partially cured PID sheet. The first partially cured PID sheet and the second partially cured PID sheet is the result of partially curing, by radiative exposure, a first uncured PID sheet and a second uncured PID sheet, respectively. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured by radiation and nonadhesively coupled to one of the fully cured PID layers. The dielectric structure may further include a second PID film partially cured by radiation and nonadhesively coupled to the other fully cured PID layer. The partially cured PID material of the dielectric structure may be fully cured by pressurization and/or elevated temperature.

    Abstract translation: 电介质结构和相关联的制造方法,其中该结构的两个完全固化的可光成像电介质(PID)层通过部分固化的PID层非粘性地接合。 部分固化的PID层包括夹在第一部分固化的PID片和第二部分固化的PID片之间的动力平面。 部分固化的PID层被隔离形成,或者通过连续地形成在完全固化的PID层之一上:第一部分固化的PID片,动力平面和第二部分固化的PID片。 第一部分固化的PID片和第二部分固化的PID片分别是通过辐射曝光部分固化,第一未固化的PID片和第二未固化的PID片的结果。 完全固化的PID层各自包括内部电源平面,具有导电耦合到内部电源平面的盲端的电镀通孔以及穿过完全固化的PID层的电镀通孔。 电介质结构可以进一步包括通过辐射部分固化并且非粘性地耦合到完全固化的PID层之一的第一PID膜。 电介质结构可以进一步包括通过辐射部分地固化并且非粘性地耦合到另一完全固化的PID层的第二PID膜。 电介质结构的部分固化的PID材料可以通过加压和/或升高的温度完全固化。

    Dielectric structure and method of formation
    250.
    发明授权
    Dielectric structure and method of formation 失效
    介电结构和形成方法

    公开(公告)号:US06495239B1

    公开(公告)日:2002-12-17

    申请号:US09458291

    申请日:1999-12-10

    Abstract: A dielectric structure, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured and nonadhesively coupled to one of the fully cured PID layers. The dialectric structure may further include a second PID film partially cured and nonadhesively coupled to the other fully cured PID layer.

    Abstract translation: 一种电介质结构,其中该结构的两个完全固化的可光成像电介质(PID)层通过部分固化的PID层非粘性地接合。 部分固化的PID层包括夹在第一部分固化的PID片和第二部分固化的PID片之间的动力平面。 完全固化的PID层各自包括内部电源平面,具有导电耦合到内部电源平面的盲端的电镀通孔以及穿过完全固化的PID层的电镀通孔。 电介质结构还可以包括部分固化并非粘性地耦合到完全固化的PID层之一的第一PID膜。 所述方程式结构还可以包括部分固化并非粘性地耦合到另一完全固化的PID层的第二PID膜。

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