Bonding structure between semiconductor device package

    公开(公告)号:US10109618B2

    公开(公告)日:2018-10-23

    申请号:US15628745

    申请日:2017-06-21

    Abstract: A semiconductor device package is provided. The semiconductor device package includes a first substrate and a conductive element fared on the first substrate. The conductive element has a recess away from the first substrate, and the recess has a first depth greater than a second depth from a top surface of the conductive element to a center of the conductive element semiconductor device package includes a conductive connector bonded to the conductive element, and a melting point of the conductive element is higher than a melting point of the conductive connector, and the conductive connector is filled into the recess of the conductive element.

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