公开(公告)号：US20160266680A1

公开(公告)日：2016-09-15

申请号：US15061858

申请日：2016-03-04

Applicant: XINTEC INC.

Inventor： Shu-Ming CHANG ,  Yu-Lung HUANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: G06F3/044 ,  H01L21/52 ,  G06F21/32 ,  H01L21/56 ,  H01L23/544 ,  H01L21/78 ,  H01L21/768 ,  H01L23/31

CPC classification number: G06F3/044 ,  G06F2203/04103 ,  G06K9/00006 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L2221/68327 ,  H01L2224/11

Abstract: This present invention provides a chip scale sensing chip package, comprising a sensing chip having a first top surface and a first bottom surface opposite to each other, a touch plate having a second top surface and a second bottom surface opposite to each other, formed above the sensing chip, and a color layer, sandwiched between the sensing chip and the touch plate, wherein the sensing chip comprises a sensing device formed nearby the first top surface and a plurality of conductive pads formed nearby the first top surface and adjacent to the sensing device, a plurality of through silicon vias exposing their corresponding conductive pads formed on the first bottom surface, a plurality of conductive structures formed on the first bottom surface, and a re-distribution layer overlaying the first bottom surface and each through silicon via to electrically connect each conductive pad and each conductive structure.

Abstract translation: 本发明提供了一种芯片级感测芯片封装，包括具有彼此相对的第一顶表面和第一底表面的感测芯片，具有彼此相对的第二顶表面和第二底表面的触摸板， 感测芯片和夹在感测芯片和触摸板之间的彩色层，其中感测芯片包括在第一顶表面附近形成的感测装置，以及在第一顶表面附近形成并邻近感测的多个导电焊盘 多个通孔硅通孔，暴露其形成在第一底表面上的相应的导电焊盘，形成在第一底表面上的多个导电结构，以及覆盖第一底表面和每个穿过硅通孔的再分配层， 连接每个导电焊盘和每个导电结构。

公开(公告)号：US20160005787A1

公开(公告)日：2016-01-07

申请号：US14853743

申请日：2015-09-14

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Ying-Nan WEN ,  Tsang-Yu LIU

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L31/02002 ,  H01L31/0232 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and a second surface; a device region disposed in the semiconductor substrate; a dielectric layer disposed on the first surface of the semiconductor substrate; a conducting pad structure disposed in the dielectric layer and electrically connected to the device region, a carrier substrate disposed on the dielectric layer; and a conducting structure disposed in a bottom surface of the carrier substrate and electrically contacting with the conducting pad structure.

公开(公告)号：US20150099357A1

公开(公告)日：2015-04-09

申请号：US14508989

申请日：2014-10-07

Applicant: XINTEC INC.

Inventor： Chuan-Jin SHIU ,  Tsang-Yu LIU ,  Chih-Wei HO ,  Shih-Hsing CHAN ,  Ching-Jui CHUANG

IPC: H01L23/00

CPC classification number: H01L24/03 ,  H01L21/32139 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/0362 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05583 ,  H01L2224/056 ,  H01L2224/11821 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method of fabricating a wafer-level chip package is provided. First, a wafer with two adjacent chips is provided, the wafer having an upper surface and a lower surface, and one side of each chip includes a conducting pad on the lower surface. A recess and an isolation layer extend from the upper surface to the lower surface, which the recess exposes the conducting pad. A part of the isolation layer is disposed in the recess with an opening to expose the conducting pad. A conductive layer is formed on the isolation layer and the conductive pad, and a photo-resist layer is spray coated on the conductive layer. The photo-resist layer is exposed and developed to expose the conductive layer, and the conductive layer is etched to form a redistribution layer. After stripping the photo-resist layer, a solder layer is formed on the isolation layer and the redistribution layer.

Abstract translation: 提供了制造晶片级芯片封装的方法。 首先，提供具有两个相邻芯片的晶片，所述晶片具有上表面和下表面，并且每个芯片的一侧在下表面上包括导电焊盘。 凹部和隔离层从上表面延伸到下表面，凹部暴露导电垫。 隔离层的一部分设置在具有开口的凹部中以暴露导电垫。 在隔离层和导电焊盘上形成导电层，并且将光致抗蚀剂层喷涂在导电层上。 曝光和显影光致抗蚀剂层以暴露导电层，并且蚀刻导电层以形成再分布层。 在剥离光刻胶层之后，在隔离层和再分布层上形成焊料层。

公开(公告)号：US20140332969A1

公开(公告)日：2014-11-13

申请号：US14339355

申请日：2014-07-23

Applicant: XINTEC INC.

Inventor： Yen-Shih HO ,  Tsang-Yu LIU ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Chao-Yen LIN ,  Wei-Luen SUEN ,  Chien-Hui CHEN ,  Chi-Chang LIAO

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L24/05 ,  H01L21/561 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48687 ,  H01L2224/4869 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/10156 ,  H01L2924/10253 ,  H01L2924/10523 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3701 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

Abstract: A chip package including a chip having an upper surface, a lower surface and a sidewall is provided. The chip includes a signal pad region adjacent to the upper surface. A first recess extends from the upper surface toward the lower surface along the sidewall. At least one second recess extends from a first bottom of the first recess toward the lower surface. The first and second recesses further laterally extend along a side of the upper surface, and a length of the first recess extending along the side is greater than that of the second recess extending along the side. A redistribution layer is electrically connected to the signal pad region and extends into the second recess. A method for forming the chip package is also provided.

Abstract translation: 提供了包括具有上表面，下表面和侧壁的芯片的芯片封装。 芯片包括与上表面相邻的信号焊盘区域。 第一凹部沿着侧壁从上表面向下表面延伸。 至少一个第二凹部从第一凹部的第一底部向下表面延伸。 第一和第二凹部沿着上表面的侧面进一步横向延伸，并且沿着侧面延伸的第一凹部的长度大于沿着侧面延伸的第二凹部的长度。 再分配层电连接到信号焊盘区域并延伸到第二凹槽中。 还提供了一种用于形成芯片封装的方法。

公开(公告)号：US20140306343A1

公开(公告)日：2014-10-16

申请号：US14251470

申请日：2014-04-11

Applicant: XINTEC INC.

Inventor： Yu-Lung HUANG ,  Shu-Ming CHANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L23/00 ,  H01L21/66 ,  H01L21/78

CPC classification number: H01L24/14 ,  H01L21/78 ,  H01L22/12 ,  H01L22/20 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/11334 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/14131 ,  H01L2224/14145 ,  H01L2224/14177 ,  H01L2224/14179 ,  H01L2224/16058 ,  H01L2224/16227 ,  H01L2224/17051 ,  H01L2224/17517 ,  H01L2224/17519 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/14146 ,  H01L2224/81 ,  H01L2224/81907 ,  H01L2924/00012 ,  H01L2224/11

Abstract: A chip package is provided, in which includes: a packaging substrate, a chip and a plurality solder balls interposed between the packaging substrate and the chip for bonding the packaging substrate and the chip, wherein the solder balls include a first portion of a first size and a second portion of a second size that is different from the first size.

Abstract translation: 提供了一种芯片封装，其中包括：封装基板，芯片和介于封装基板和芯片之间的多个焊球，用于接合封装基板和芯片，其中焊球包括第一尺寸的第一部分 以及与第一尺寸不同的第二尺寸的第二部分。

公开(公告)号：US20140252659A1

公开(公告)日：2014-09-11

申请号：US14199640

申请日：2014-03-06

Applicant: XINTEC INC.

Inventor： Yung-Tai TSAI ,  Shu-Ming CHANG ,  Chun-Wei CHANG ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/3192 ,  H01L24/03 ,  H01L2224/02371 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00014

Abstract: A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

Abstract translation: 半导体结构包括晶片，至少一个非金属氧化物层，焊盘，钝化层，隔离层和导电层。 晶片具有连接在第二和第三表面之间的第一表面，第二表面，第三表面，第一阶段差异表面以及连接在第一和第三表面之间的第二阶段差异表面。 非金属氧化物层位于晶片的第一表面上。 垫位于非金属氧化物层上并电连接到晶片。 钝化层位于非金属氧化物层上。 隔离层位于钝化层，非金属氧化物层，晶片的第一，第二和第三表面以及晶片的第一和第二级差分表面上。 导电层位于隔离层上并电接触焊盘。

公开(公告)号：US20140231966A1

公开(公告)日：2014-08-21

申请号：US14260205

申请日：2014-04-23

Applicant: XINTEC INC.

Inventor： Bai-Yao LOU ,  Tsang-Yu LIU ,  Chia-Sheng LIN ,  Tzu-Hsiang HUNG

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05025 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05687 ,  H01L2224/0569 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/32225 ,  H01L2224/73153 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment of the invention provides a chip package which includes a substrate having a first surface and a second surface; a conducting pad structure located on the first surface; a dielectric layer located on the first surface of the substrate and the conducting pad structure, wherein the dielectric layer has an opening exposing a portion of the conducting pad structure; and a cap layer located on the dielectric layer and filled into the opening.

Abstract translation: 本发明的实施例提供一种芯片封装，其包括具有第一表面和第二表面的基板; 位于所述第一表面上的导电垫结构; 位于所述基板的所述第一表面上的电介质层和所述导电焊盘结构，其中所述电介质层具有暴露所述导电焊盘结构的一部分的开口; 以及位于电介质层上并填充到开口中的盖层。

公开(公告)号：US20140203387A1

公开(公告)日：2014-07-24

申请号：US14157379

申请日：2014-01-16

Applicant: XINTEC INC.

Inventor： Wei-Luen SUEN ,  Shu-Ming CHANG ,  Yu-Lung HUANG ,  Yen-Shih HO ,  Tsang-Yu LIU

IPC: H01L31/02

CPC classification number: H01L31/02005 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/525 ,  H01L24/02 ,  H01L24/11 ,  H01L24/13 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68304 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/02313 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/0231 ,  H01L2224/11

Abstract: Disclosed herein is a semiconductor chip package, which includes a semiconductor chip, a plurality of vias, an isolation layer, a redistribution layer, and a packaging layer. The vias extend from the lower surface to the upper surface of the semiconductor chip. The vias include at least one first via and at least one second via. The isolation layer also extends from the lower surface to the upper surface of the semiconductor chip, and part of the isolation layer is disposed in the vias. The sidewall of the first via is totally covered by the isolation layer while the sidewall of the second via is partially covered by the isolation layer. The redistribution layer is disposed below the isolation layer and fills the plurality of vias, and the packaging layer is disposed below the isolation layer.

Abstract translation: 这里公开了一种半导体芯片封装，其包括半导体芯片，多个通孔，隔离层，再分布层和封装层。 通孔从半导体芯片的下表面延伸到上表面。 通孔包括至少一个第一通孔和至少一个第二通孔。 隔离层也从半导体芯片的下表面延伸到上表面，并且隔离层的一部分设置在通孔中。 第一通孔的侧壁完全被隔离层覆盖，而第二通孔的侧壁被隔离层部分地覆盖。 再分配层设置在隔离层下方并填充多个通孔，并且包装层设置在隔离层下方。

公开(公告)号：US20140199835A1

公开(公告)日：2014-07-17

申请号：US14214389

申请日：2014-03-14

Applicant: XINTEC INC.

Inventor： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Long-Sheng YEOU

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  B81B7/007 ,  B81B2207/07 ,  B81B2207/092 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/13025 ,  H01L2224/9202 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

Abstract: According to an embodiment of the invention, a chip package is provided. The chip package includes: a substrate having an upper surface and a lower surface; a plurality of conducting pads located under the lower surface of the substrate; a dielectric layer located between the conducting pads; a trench extending from the upper surface towards the lower surface of the substrate; a hole extending from a bottom of the trench towards the lower surface of the substrate, wherein an upper sidewall of the hole inclines to the lower surface of the substrate, and a lower sidewall or a bottom of the hole exposes a portion of the conducting pads; and a conducting layer located in the hole and electrically connected to at least one of the conducting pads.

Abstract translation: 根据本发明的实施例，提供了芯片封装。 芯片封装包括：具有上表面和下表面的基板; 位于所述基板的下表面下方的多个导电垫; 位于导电垫之间的电介质层; 从衬底的上表面延伸到下表面的沟槽; 从所述沟槽的底部延伸到所述衬底的下表面的孔，其中所述孔的上侧壁倾斜到所述衬底的下表面，并且所述孔的下侧壁或底部暴露所述导电垫的一部分 ; 以及导电层，其位于所述孔中并电连接到至少一个所述导电焊盘。

公开(公告)号：US20140091441A1

公开(公告)日：2014-04-03

申请号：US14092795

申请日：2013-11-27

Applicant: XINTEC INC.

Inventor： Yao-Hsiang CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO ,  Shu-Ming CHANG

IPC: H01L23/552 ,  H01L23/00 ,  H01L21/71

CPC classification number: H01L23/552 ,  H01L21/71 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06155 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: An IC wafer and the method of making the IC wafer, the IC wafer includes an integrated circuit layer having a plurality of solder pads and an insulated layer arranged thereon, a plurality of through holes cut through the insulated layer corresponding to the solder pads respectively for the implantation of a package layer, and an electromagnetic shielding layer formed on the top surface of the insulated layer and electrically isolated from the solder pads of the integrated circuit layer for electromagnetic shielding. Thus, the integrated circuit does not require any further shielding mask, simplifying the fabrication. Further, the design of the through holes facilitates further packaging process.

Abstract translation: IC晶片和IC晶片的制造方法，IC晶片包括具有多个焊盘和设置在其上的绝缘层的集成电路层，多个贯穿相应于焊盘的绝缘层的通孔，分别用于 封装层的注入，以及形成在绝缘层的顶表面上并与用于电磁屏蔽的集成电路层的焊盘电隔离的电磁屏蔽层。 因此，集成电路不需要任何进一步的屏蔽掩模，从而简化制造。 此外，通孔的设计有助于进一步的包装过程。