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261 条记录 (耗时 0.027 秒)

    Method and apparatus for thinning a substrate
    33.
    发明授权
    Method and apparatus for thinning a substrate 有权
    减薄基板的方法和装置

    公开(公告)号：US07972969B2

    公开(公告)日：2011-07-05

    申请号：US12043714

    申请日：2008-03-06

    申请人： Ku-Feng Yang ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Kewei Zuo

    发明人： Ku-Feng Yang ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Kewei Zuo

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/67253 ,  H01L21/30604 ,  H01L21/6708 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is provided for controlling substrate thickness. At least one etchant is dispensed from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching. A thickness of the spinning substrate is monitored at the plurality of locations, so that the thickness of the substrate is monitored at each individual location while dispensing the etchant at that location. A respective amount of etching performed at each individual location is controlled, based on the respective monitored thickness at that location.

    摘要翻译： 提供了一种控制基板厚度的方法。 至少一种蚀刻剂从纺丝衬底的表面从至少一个分配器分配到多个不同位置以进行蚀刻。 在多个位置监测纺丝衬底的厚度，从而在每个单独位置监测衬底的厚度，同时在该位置分配蚀刻剂。 基于在该位置处的相应监视的厚度来控制在每个单独位置执行的相应的蚀刻量。

    VIA STRUCTURE AND VIA ETCHING PROCESS OF FORMING THE SAME
    37.
    发明申请
    VIA STRUCTURE AND VIA ETCHING PROCESS OF FORMING THE SAME 有权
    通过结构和通过形成它们的蚀刻过程

    公开(公告)号：US20100244247A1

    公开(公告)日：2010-09-30

    申请号：US12722949

    申请日：2010-03-12

    申请人： Hung-Pin CHANG ,  Wen-Chih CHIOU ,  Chen-Hua YU

    发明人： Hung-Pin CHANG ,  Wen-Chih CHIOU ,  Chen-Hua YU

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L21/76898 ,  H01L2924/0002 ,  Y10S438/978 ,  H01L2924/00

    摘要： A via etching process forms a through-substrate via having a round corner and a tapered sidewall profile. A method includes providing a semiconductor substrate; forming a hard mask layer and a patterned photoresist layer on the semiconductor substrate; forming an opening in the hard mask and exposing a portion of the semiconductor substrate; forming a via passing through at least a part of the of semiconductor substrate using the patterned photoresist layer and hard mask layer as a masking element; performing a trimming process to round the top corner of the via; and removing the photoresist layer.

    摘要翻译： 通孔蚀刻工艺通过具有圆角和锥形侧壁轮廓形成通孔基板。 一种方法包括提供半导体衬底; 在所述半导体衬底上形成硬掩模层和图案化的光致抗蚀剂层; 在所述硬掩模中形成开口并暴露所述半导体衬底的一部分; 使用图案化的光致抗蚀剂层和硬掩模层作为掩模元件形成穿过半导体衬底的至少一部分的通孔; 执行修整过程以绕过通孔的顶角; 并除去光致抗蚀剂层。